2N5681
2N5682
SILICON NPN TRANSISTORS
s
SGS-THOMSON PREFERRED SALESTYPES
s
NPN TRANSISTOR
APPLICATIONS
s
GENERAL PURPOSE SWITCHING
s
GENERAL PURPOSE AMPLIFIERS
DESCRIPTION
The 2N5681, 2N5682 are high voltage silicon
epitaxial planar NPN transistors in Jedec TO-39
metal case intended for use as drivers for high
power transistors in general purpose, amplifier
and switching applications.
The complementary PNP types are the 2N5679
and 2N5680 respectively.
INTERNAL SCHEMATIC DIAGRAM
July 1997
TO-39
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
2N5680
2N5682
V
CBO
Collector-Base Voltage (I
E
= 0)
100
120
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
100
120
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
4
V
I
C
Collector Current
1
A
I
B
Base Current
0.5
A
P
tot
Total Dissipation at T
c
25
o
C
10
W
P
tot
Total Dissipation at T
amb
50
o
C
1
W
T
stg
Storage Temperature
-65 to 200
o
C
T
j
Max. Operating Junction Temperature
200
o
C
1/4
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
17.5
175
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CEV
Collector Cut-off
Current (V
BE
= -1.5V)
for 2N5681 V
CE
= 100 V
for 2N5682 V
CE
= 120 V
T
c
= 150
o
C
for 2N5681 V
CE
= 100 V
for 2N5682 V
CE
= 120 V
1
1
1
1
A
A
A
A
I
CBO
Collector Cut-off
Current (I
E
= 0)
for 2N5681 V
CB
= 100 V
for 2N5682 V
CB
= 120 V
1
1
A
A
I
CEO
Collector Cut-off
Current (I
B
= 0)
for 2N5681 V
CB
= 70 V
for 2N5682 V
CB
= 80 V
10
10
A
A
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 4 V
1
A
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
I
C
= 10 mA
for 2N5681
for 2N5682
100
120
V
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 250 mA I
B
= 25 mA
I
C
= 500 mA I
B
= 50 mA
I
C
= 1 A I
B
= 200 mA
0.6
1
2
V
V
V
V
BE
Base-Emitter Voltage
I
C
= 250 mA V
CE
= 2 V
1
V
h
FE
DC Current Gain
I
C
= 250 mA V
CE
= 2 V
I
C
= 1 A V
CE
= 2 V
40
5
150
h
fe
Small Signal Current
Gain
I
C
= 0.2 A V
CE
= 1.5 V f = 1KHz
40
f
T
Transition frequency
I
C
= 100 mA V
CE
= 10 V f =10MHz
30
MHz
C
CBO
Collector Base
Capacitance
I
E
= 0 V
CB
= 20 V f = 1MHz
50
pF
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
2N5681 / 2N5682
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
12.7
0.500
B
0.49
0.019
D
6.6
0.260
E
8.5
0.334
F
9.4
0.370
G
5.08
0.200
H
1.2
0.047
I
0.9
0.035
L
45
o
(typ.)
L
G
I
D
A
F
E
B
H
P008B
TO-39 MECHANICAL DATA
2N5681 / 2N5682
3/4
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
2N5681 / 2N5682
4/4
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