2N5884
2N5886
COMPLEMENTARY SILICON
HIGH POWER TRANSISTORS
s
SGS-THOMSON PREFERRED SALESTYPES
s
COMPLEMENTARY PNP - NPN DEVICES
s
HIGH CURRENT CAPABILITY
APPLICATIONS
s
GENERAL PURPOSE SWITCHING AND
AMPLIFIER
s
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The 2N5884 and 2N5886 are complementary
silicon power transistor in Jedec TO-3 metal case
inteded for use in power linear amplifiers and
switching applications.
INTERNAL SCHEMATIC DIAGRAM
June 1997
1
2
TO-3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
PNP
2N5884
NPN
2N5886
V
CBO
Collector-Base Voltage (I
E
= 0)
80
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
80
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
5
V
I
C
Collector Current
25
A
I
CM
Collector Peak Current
50
A
I
B
Base Current
7.5
A
P
tot
Total Dissipation at T
c
25
o
C
200
W
T
stg
Storage Temperature
-65 to 200
o
C
T
j
Max. Operating Junction Temperature
200
o
C
For PNP types voltage and current values are negative.
1/4
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
0.875
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CEV
Collector Cut-off
Current (V
BE
= -1.5V)
V
CE
= rated V
CEO
V
CE
= rated V
CEO
T
c
= 150
o
C
1
10
mA
mA
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CE
= rated V
CBO
1
mA
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CE
= 40 V
2
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
1
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
I
C
= 200 mA
80
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 15 A I
B
= 1.5 A
I
C
= 25 A I
B
= 6.25 A
1
4
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 25 A I
B
= 6.25 A
2.5
V
V
BE
Base-Emitter Voltage
I
C
= 10 A V
CE
= 4 V
1.5
V
h
FE
DC Current Gain
I
C
= 3 A V
CE
= 4 V
I
C
= 10 A V
CE
= 4 V
I
C
= 25 A V
CE
= 4 V
35
20
4
100
h
fe
Small Signal Current
Gain
I
C
= 3 A V
CE
= 4 V f = 1KHz
20
f
T
Transition frequency
I
C
= 1 A V
CE
= 10 V f =1 MHz
4
MHz
C
CBO
Collector Base
Capacitance
I
E
= 0 V
CB
= 10 V f = 1MHz
for NPN type
for PNP type
500
1000
pF
pF
t
r
Rise Time
I
C
= 10 A V
CC
= 30 V
I
B1
= -I
B2
= 1A
0.7
s
t
s
Storage Time
1
s
t
f
Fall Time
0.8
s
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
2N5884 / 2N5886
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
11.00
13.10
0.433
0.516
B
0.97
1.15
0.038
0.045
C
1.50
1.65
0.059
0.065
D
8.32
8.92
0.327
0.351
E
19.00
20.00
0.748
0.787
G
10.70
11.10
0.421
0.437
N
16.50
17.20
0.649
0.677
P
25.00
26.00
0.984
1.023
R
4.00
4.09
0.157
0.161
U
38.50
39.30
1.515
1.547
V
30.00
30.30
1.187
1.193
E
B
R
C
D
A
P
G
N
V
U
O
P003F
TO-3 MECHANICAL DATA
2N5884 / 2N5886
3/4
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
2N5884 / 2N5886
4/4
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