2N6059
SILICON NPN POWER DARLINGTON TRANSISTOR
s
SGS-THOMSON PREFERRED SALESTYPE
s
HIGH GAIN
s
NPN DARLINGTON
s
HIGH CURRENT
s
HIGH DISSIPATION
s
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
s
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The 2N6059 is a silicon epitaxial-base NPN
transistor in monolithic Darlington configuration
mounted in Jedec TO-3 metal case.
It is inteded for use in power linear and low
frequency switching applications.
INTERNAL SCHEMATIC DIAGRAM
June 1997
1
2
TO-3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage (I
E
= 0)
100
V
V
CEX
Collector-Emitter Voltage (V
BE
= -1.5V)
100
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
100
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
5
V
I
C
Collector Current
12
A
I
CM
Collector Peak Current
20
A
I
B
Base Current
0.2
A
P
tot
Total Dissipation at T
c
25
o
C
150
W
T
stg
Storage Temperature
-65 to 200
o
C
T
j
Max. Operating Junction Temperature
200
o
C
For PNP types voltage and current values are negative.
R
1
Typ. = 6 K
R
2
Typ. = 55
1/4
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
1.17
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CEX
Collector Cut-off
Current (V
BE
= -1.5V)
V
CE
= rated V
CEX
V
CE
= rated V
CEX
T
c
= 150
o
C
0.5
5
mA
mA
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CE
= 50 V
1
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
2
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
I
C
= 100 mA
100
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 6 A I
B
= 24 mA
I
C
= 12 A I
B
= 120 mA
2
3
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 12 A I
B
= 120 mA
4
V
V
BE
Base-Emitter Voltage
I
C
= 6 A V
CE
= 3 V
2.8
V
h
FE
DC Current Gain
I
C
= 6 A V
CE
= 3 V
I
C
= 12 A V
CE
= 3 V
750
100
f
T
Transition frequency
I
C
= 5 A V
CE
= 3 V f =1 MHz
4
MHz
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
2N6059
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
11.00
13.10
0.433
0.516
B
0.97
1.15
0.038
0.045
C
1.50
1.65
0.059
0.065
D
8.32
8.92
0.327
0.351
E
19.00
20.00
0.748
0.787
G
10.70
11.10
0.421
0.437
N
16.50
17.20
0.649
0.677
P
25.00
26.00
0.984
1.023
R
4.00
4.09
0.157
0.161
U
38.50
39.30
1.515
1.547
V
30.00
30.30
1.187
1.193
E
B
R
C
D
A
P
G
N
V
U
O
P003F
TO-3 MECHANICAL DATA
2N6059
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
2N6059
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