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Электронный компонент: 2N6388

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2N6388
SILICON NPN POWER DARLINGTON TRANSISTOR
s
STMicroelectronics PREFERRED
SALESTYPE
s
NPN DARLINGTON
s
HIGH CURRENT CAPABILITY
s
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
DESCRIPTION
The device is a silicon epitaxial-base NPN power
transistor in monolithic Darlington configuration
mounted in Jedec TO-220 plastic package.
It is inteded for use in low and medium frequency
power applications.
INTERNAL SCHEMATIC DIAGRAM
April 1999
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage (I
B
= 0)
80
V
V
CEV
Collector-Emitter Voltage (V
BE
= -1.5V)
80
V
V
CER
Collector-Emitter Voltage (R
BE
100
)
80
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
80
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
5
V
I
C
Collector Current
10
A
I
CM
Collector Peak Current
15
A
I
B
Base Current
0.25
A
P
tot
Total Dissipation at T
c
25
o
C
65
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
R
1
Typ. = 10 K
R
2
Typ. = 160
1
2
3
TO-220
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THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
1.92
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CEV
Collector Cut-off
Current (V
BE
= -1.5V)
V
CE
= rated V
CEO
V
CE
= rated V
CEO
T
c
= 125
o
C
0.3
3
mA
mA
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CE
= 80 V
1
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
5
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
I
C
= 200 mA
80
V
V
CER(sus)
Collector-Emitter
Sustaining Voltage
I
C
= 200 mA R
BE
= 100
80
V
V
CEV(sus)
Collector-Emitter
Sustaining Voltage
I
C
= 200 mA V
BE
= -1.5V
80
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 5 A I
B
= 10 mA
I
C
= 10 A I
B
= 100 mA
2
3
V
V
V
BE
Base-Emitter Voltage
I
C
= 5 A V
CE
= 3 V
I
C
= 10 A V
CE
= 3 V
2.8
4.5
V
V
h
FE
DC Current Gain
I
C
= 5 A V
CE
= 3 V
I
C
= 10 A V
CE
= 3 V
1000
100
20000
h
fe
Small Signal Current
Gain
I
C
= 1 A V
CE
= 10 V f = 1MHz
I
C
= 1 A V
CE
= 10 V f = 1KHz
20
1000
V
F
Parallel-diode Forward
Voltage
I
F
= 10 A
4
V
C
CBO
Collector Base
Capacitance
I
E
= 0 V
CB
= 10 V f = 1MHz
200
pF
I
s/b
Second Breakdown
Collector Current
V
CE
= 25 V
2.6
A
E
s/b
Second Breakdown
Energy
L = 12 mH R
BE
= 100
V
BE
= -1.5 V I
C
= 4.5 A
120
mJ
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
Pulsed: Pulse duration = 100ms non repetitive pulse.
2N6388
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
P011C
TO-220 MECHANICAL DATA
2N6388
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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1999 STMicroelectronics Printed in Italy All Rights Reserved
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