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Электронный компонент: 2SD1391

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August 23, 1996
RF & MICROWAVE TRANSISTORS
UHF BASE STATION APPLICATIONS
.
470 MHZ
.
24 VOLTS
.
EFFICIENCY 50% MIN.
.
P
OUT
=
15 W WITH 11.0 dB MIN. GAIN
.
CLASS AB
.
COMMON EMITTER
P RELIMINARY DATA
DESCRIPTION
The SD1391 is a gold metallized NPN planar tran-
sistor using diffused emitter ballast resistors for
reliability and ruggedness.
The SD1391 is specifically designed as a low
power, high gain driver and can be operated in
Class A, B or C.
PIN CONNECTION
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Un it
V
CBO
Collector-Base Voltage
48
V
V
CEO
Collector-Emitter Voltage
25
V
V
EBO
Emitter-Base Voltage
3.5
V
I
C
Collector Current
2.5
A
P
DISS
Power Dissipation (+25
C)
29
W
T
J
Junction Temperature
+200
C
T
STG
Storage Temperature
-
65 to +150
C
R
TH(j- c)
Junction-Case Thermal Resistance
6.0
C/W
SD1391
1. Collector
3. Emitter
2. Base
THERMAL DATA
.2 30 x .3 60 6LF L (M1 4 2)
O R DE R CODE
SD1391
BRANDING
SD1391
1/ 5
STATIC
DYNAMIC
ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
S ym bo l
T e s t Co n d itio ns
Va lu e
Un it
Min .
T yp .
Ma x.
P
OUT
f
=
470 MHz
P
IN
= 6.3 W
V
CC
=
24V
I
CQ
= 50 mA
15
--
--
W
C
f
=
470 MHz
P
IN
= 6.3 W
V
CC
=
24V
I
CQ
= 50 mA
50
60
%
R
TL
f
=
470 MHz
P
IN
= 6.3 W
V
CC
=
24V
I
CQ
= 50 mA
10
--
dB
C
OB
f
=
1 MHz
V
CB
=
24 V
--
--
24
pF
S ym bo l
Te s t C o n ditio n s
Va lu e
Un it
Min .
Typ .
Ma x.
BV
CBO
I
C
=
50 mA
I
E
=
0 mA
48
--
--
V
BV
CEO
I
C
=
20 mA
I
B
=
0 mA
25
--
--
V
BV
EBO
I
E
=
5 mA
I
C
=
0 mA
3.5
--
--
V
I
CBO
V
C B
=
24 V
I
E
=
0 mA
--
--
1.0
mA
h
FE
V
C E
=
10 V
I
C
=
0.1 A
10
--
100
--
SD1391
2/5
INPUT RETURN LOS S vs FREQUENCY
EFFICIENCY vs FREQUENCY
POWE R GAIN vs FREQUENCY
OUTPUT POW ER vs INPUT POWE R
SD1391
3/ 5
TYP ICAL C OLLE C TO R LOAD
IMP E DANCE
TYP ICAL INP UT
IMP E DANC E
Z
IN
Z
CL
C1
:
2200pf Chip Capacitor
C2
:
22pf Chip Capacitor + 2-10pf Trim Capacitor
C3
:
2 x 33pf + 2-22pf Trim Capacitor
C5
:
8.2pf + 2-10pf Trim Capacitor
C6
:
330pf Chip Capac itor
C7,C8
:1nF + 10nF + 100nF + 10mF
L1
:
50 ohms microstrip line, L = 6mm
L2
:
50 ohms microstrip line, L = 19mm
L3
:
50 ohms microstrip line, L = 25mm
L4
:
50 ohms microstrip line, L = 14mm
L5
:
50 ohms microstrip line, L = 20mm
L6
:
50 ohms microstrip line, L = 7.5mm
L7
:
50 ohms microstrip line, L = 8.5mm
L8,L9 :
5 Turns, ID = 33mm, 0.5mm Wire diameter
Board Material: Teflon H = 30mils, Er = 2.55
IMPEDANCE DATA
FREQ.
Z
IN
(
)
Z
CL
(
)
420 MHz
4.0 + j 2.2
7.2 + j 1.0
450 MHz
5.4 + j 3.9
6.8 + j 3.0
470 MHz
4.9 + j 5.7
6.6 + j 4.3
TEST CIRCUIT
SD1391
4/5
Ref.: Dwg. No. 12-0142 rev. C
UDC S No. 1010968
PACKAGE MECHANICAL DATA
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously
supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
1996 SGS-TH OMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIE S
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia -
Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan -
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SD1391
5/ 5