850-960 MHz APPLICATIONS
RF & MICROWAVE TRANSISTORS
.230 6LFL (M142)
epoxy sealed
.
850 - 960 MHZ
.
24 VOLTS
.
COMMON EMITTER
.
OVERLAY GEOMETRY
.
GOLD METALLIZATION
.
P
OUT
=
6.0 W MIN. WITH 10.0 dB GAIN
DESCRIPTION
The SD1398 is a gold metallized epitaxial silicon
NPN transistor designed for high linearity Class
AB operation cellular base station applications. The
SD1398 can also be operated Class C.
The SD1398 is internally input matched and can
be used as a driver for the SD1423 or SD1424.
PIN CONNECTION
BRANDING
SD1398
ORDER CODE
SD1398
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Uni t
V
CBO
Collector-Base Voltage
50
V
V
CES
Collector-Emitter Voltage
35
V
V
EBO
Emitter-Base Voltage
3.5
V
I
C
Device Current
2.4
A
P
DISS
Power Dissipation
53
W
T
J
Junction Temperature
+200
C
T
STG
Storage Temperature
-
65 to +150
C
R
TH(j-c)
Junction-Case Thermal Resistance
3.3
C/W
SD1398
1. Collector
3. Emitter
2. Base
THERMAL DATA
September 8, 1993
1/6
ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symbol
Test Conditi ons
Value
Uni t
Min.
Typ.
Max.
P
OUT
f
=
850 -- 960 MHz
V
CE
=
24 V
I
CQ
=
25 mA
6
--
--
W
c
f
=
850 -- 960 MHz
V
CE
=
24 V
I
CQ
=
25 mA
--
50
--
%
G
P
f
=
850 -- 960 MHz
V
CE
=
24 V
I
CQ
=
25 mA
10
12
--
dB
C
OB
f
=
1 MHz
V
CB
=
24 V
--
7.5
8.5
pF
N ote:
P
IN
=
0.60w
STATIC
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
BV
CBO
I
C
=
5mA
I
E
=
0mA
50
--
--
V
BV
CEO
I
C
=
5mA
I
B
=
0mA
24
--
--
V
BV
EBO
I
E
=
5mA
I
C
=
0mA
3.5
--
--
V
I
CEO
V
CE
=
24V
I
E
=
0mA
--
--
1.0
mA
I
CBO
V
CB
=
24V
I
E
=
0mA
--
--
1.0
mA
h
FE
V
CE
=
10V
I
C
=
0.1A
20
--
100
--
DYNAMIC
TYPICAL PERFORMANCE
CLASS AB BROADBAND OUTPUT POWER
vs INPUT POWER
OUTPUT POWER vs INPUT POWER
SD1398
2/6
C1, C2
C7, C11
: 240pF ATC Size A
C3
: 0.1MFD 50Vdc, CK05 Type
C4, C5
: 1500pF Feedthru #9900-381-6004 Murata/Erie
C6, C10
: 0.8 - 8.0pF Johanson Gigatrim
C8
: 0.01 MFD 100Vdc CK05 Type
C9
: 10MFD Electrolytic, 63Vdc
D1
: IN5661
FB-1,
FB-2
: 2.5 Turns, #22 AWG, Ferrite Bead
FB-3
: Ferrite Bead L1 Cold End
L1
: 3 Turns, #22 AWG, 0.125" I.D.
R1
: 150
in 5% Carbon Comp
R2
: 51
, Chip Resistor
Board
Material:
Er
=
10.2, Height 0.05", Teflon Glass
TEST CIRCUIT
SD1398
4/6
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