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Электронный компонент: 5203

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TS420 Series
SENSITIVE
4A SCRs
September 2000 - Ed: 3
MAIN FEATURES:
DESCRIPTION
Thanks to highly sensitive triggering levels, the
TS420 series is suitable for all applications where
the available gate current is limited, such as motor
control for hand tools, kitchen aids, overvoltage
crowbar protection for low power supplies, ...
Available in through-hole or surface-mount
packages, they provide an optimized performance
in a limited space area.
Symbol
Value
Unit
I
T(RMS)
4
A
V
DRM
/V
RRM
600 and 700
V
I
GT
200
A
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current (180 conduction angle)
Tl = 115C
4
A
IT
(AV)
Average on-state current (180 conduction angle)
Tl = 115C
2.5
A
I
TSM
Non repetitive surge peak on-state
current
tp = 8.3 ms
Tj = 25C
33
A
tp = 10 ms
30
I
t
I
t Value for fusing
tp = 10 ms
Tj = 25C
4.5
A
2
S
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr
100 ns
F = 60 Hz
Tj = 125C
50
A/s
I
GM
Peak gate current
tp = 20 s
Tj = 125C
1.2
A
P
G(AV)
Average gate power dissipation
Tj = 125C
0.2
W
T
stg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
C
G
A
K
DPAK
(TS420-B)
A
A
K
G
A
A
K
G
A
G
A
K
IPAK
(TS420-H)
TO-220AB
(TS420-T)
TS420 Series
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ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified)
THERMAL RESISTANCES
S = copper surface under tab
PRODUCT SELECTOR
ORDERING INFORMATION
Symbol
Test Conditions
TS420
Unit
I
GT
V
D
= 12 V R
L
= 33
MAX.
200
A
V
GT
MAX.
0.8
V
V
GD
V
D
= V
DRM
R
L
= 3.3 k
R
GK
= 220
Tj = 125C
MIN.
0.1
V
V
RG
I
RG
= 10
A
MIN.
8
V
I
H
I
T
= 50 mA R
GK
= 1 k
MAX.
5
mA
I
L
I
G
= 1 mA R
GK
= 1 k
MAX.
6
mA
dV/dt
V
D
= 67 % V
DRM
R
GK
= 220
Tj = 125C
MIN.
5
V/s
V
TM
I
TM
= 8 A tp = 380 s
Tj = 25C
MAX.
1.6
V
V
t0
Threshold voltage
Tj = 125C
MAX.
0.85
V
R
d
Dynamic resistance
Tj = 125C
MAX.
90
m
I
DRM
I
RRM
V
DRM
= V
RRM
R
GK
= 220
Tj = 25C
MAX.
5
A
Tj = 125C
1
mA
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case (DC)
3.0
C/W
R
th(j-a)
Junction to ambient (DC)
S = 0.5 cm
DPAK
70
C/W
IPAK
100
TO-220AB
60
Part Number
Voltage (xxx)
Sensitivity
Package
600 V
700 V
TS420-xxxB
X
X
200 A
DPAK
TS420-xxxH
X
X
200 A
IPAK
TS420-xxxT
X
X
200 A
TO-220AB
PACKING MODE
Blank: Tube
-TR: DPAK tape & reel
VOLTAGE:
600: 600V
700: 700V
SENSITIVITY:
20: 200A
CURRENT: 4A
SCR
SERIES
PACKAGE:
B: DPAK
H: IPAK
T: TO-220AB
TS420 Series
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OTHER INFORMATION
Note: x = voltage
Part Number
Marking
Weight
Base Quantity
Packing mode
TS420-x00B
TS420x00
0.3 g
75
Tube
TS420-x00B-TR
TS420x00
0.3 g
2500
Tape & reel
TS420-x00H
TS420x00
0.4 g
75
Tube
TS420-x00T
TS420x00T
2.3 g
50
Tube
Fig. 1: Maximum average power dissipation
versus average on-state current.
Fig. 2-1: Average and D.C. on-state current
versus case temperature.
Fig. 2-2: Average and D.C. on-state current
versus ambient temperature (device mounted on
FR4 with recommended pad layout) (DPAK).
Fig. 3: Relative variation of thermal impedance
junction to ambient versus pulse duration
(recommended pad layout, FR4 PC board) for
DPAK.
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
P(W)
= 180
IT(av)(A)
360
0
25
50
75
100
125
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
IT(av)(A)
DC
= 180
Tcase(C)
0
25
50
75
100
125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IT(av)(A)
= 180
DC
= 180
DPAK
(S = 0.5cm
2
)
IPAK
DC
Tamb(C)
TS420 Series
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Fig. 4: Relative variation of gate trigger current
and holding current versus junction temperature.
Fig. 5: Relative variation of holding current
versus gate-cathode resistance (typical values).
Fig. 6: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
Fig. 8: Surge peak on-state current versus
number of cycles.
Fig. 9: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding values of It.
-40
-20
0
20
40
60
80
100
120
140
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IGT,IH,IL [Tj] / IGT ,IH,IL [Tj = 25 C]
IGT
IH & IL
Rgk = 1k
Tj(C)
IH[Rgk] / IH[Rgk = 1k ]
Rgk(k
)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.01
0.10
1.00
10.00
Tj=125C
VD=0.67xVDRM
dV/dt[Rgk] / dV/dt [Rgk = 220 ]
Rgk(
)
0
2
4
6
8
10
12
14
16
18
20
22
0
2
4
6
8
10
VD = 0.67 x VDRM
Tj = 125 C
Rgk = 220
dV/dt[Cgk] / dV/dt [Rgk = 220
]
Cgk(nF)
1
10
100
1000
0
5
10
15
20
25
30
35
ITSM(A)
Non repetitiv e
Tj initial = 25 C
Repetitive
Tcase = 115 C
Number of cycles
One cycle
tp = 10ms
0.01
0.10
1.00
10.00
1
10
100
300
ITSM(A),I
2
t(A
2
s)
Tj initial = 25 C
ITSM
I
2
t
dI/dt
limitattion
tp(ms)
TS420 Series
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Fig. 10: On-state characteristics (maximum
values).
Fig. 11: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35
m)
(DPAK).
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.1
1.0
10.0
50.0
ITM(A)
Tj max.:
Vto = 0.85V
Rd = 90m
Tj = Tj max.
Tj = 25C
VTM(V)
0
2
4
6
8
10
12
14
16
18
20
0
20
40
60
80
100
Rth(j-a) ( C/W)
S(cm
2
)