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1/9
February 2003
s
HIGH SPEED:
t
PD
= 4.5 ns (TYP.) at V
CC
= 5V
s
LOW POWER DISSIPATION:
I
CC
= 8
A (MAX.) at T
A
=25C
s
HIGH NOISE IMMUNITY:
V
NIH
= V
NIL
= 28% V
CC
(MIN.)
s
POWER DOWN PROTECTION ON INPUTS
s
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 24 mA (MIN)
s
BALANCED PROPAGATION DELAYS:
t
PLH
t
PHL
s
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 6V
s
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 16244
s
IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74AC16244 is an advanced high-speed
CMOS 16-BIT BUS BUFFER (3-STATE) fabricat-
ed with sub-micron silicon gate and double-layer
metal wiring C
2
MOS tecnology.
Any
nG
output
control
governs
four
BUS
BUFFERS.
Output
Enable
inputs
(nG)
tied
together give full 16 bit operation.
When nG is LOW, the outputs are enabled. When
nG is HIGH, the output are in high impedance
state.
The device is designed to be used with 3-state
memory address drivers, etc.
74AC16244
16-BIT BUS BUFFER
WITH 3-STATE OUTPUTS (NON INVERTED)
ORDER CODES
PACKAGE
TUBE
T & R
TSSOP
74AC16244TTR
TSSOP
PIN CONNECTION
74AC16244
2/9
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
TRUTH TABLE
X : Don't Care
Z : High Impedance
IEC LOGIC SYMBOLS
PIN No
SYMBOL
NAME AND FUNCTION
1
1G
Output Enable Input
2, 3, 5, 6
1Y1 to 1Y4 Data Outputs
8, 9, 11, 12
2Y1 to 2Y4 Data Outputs
13, 14, 16, 17
3Y1 to 3Y4 Data Outputs
19, 20, 22, 23
4Y1 to 4Y4 Data Outputs
24
4G
Output Enable Input
25
3G
Output Enable Input
30, 29, 27, 26
4A1 to 4A4 Data Outputs
36, 35, 33, 32
3A1 to 3A4 Data Outputs
41, 40, 38, 37
2A1 to 2A4 Data Outputs
47, 46, 44, 43
1A1 to 1A4 Data Outputs
48
2G
Output Enable Input
4, 10, 15, 21,
28, 34, 39, 45
GND
Ground (0V)
7, 18, 31, 42
V
CC
Positive Supply Voltage
INPUTS
OUTPUT
G
An
Yn
L
L
L
L
H
H
H
X
Z
74AC16244
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ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
RECOMMENDED OPERATING CONDITIONS
1) V
IN
from 30% to 70% of V
CC
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
-0.5 to +7.0
V
V
I
DC Input Voltage
-0.5 to +7.0
V
V
O
DC Output Voltage
-0.5 to V
CC
+ 0.5
V
I
IK
DC Input Diode Current
20
mA
I
OK
DC Output Diode Current
50
mA
I
O
DC Output Current
50
mA
I
CC
or I
GND
DC V
CC
or Ground Current
400
mA
T
stg
Storage Temperature
-65 to +150
C
T
L
Lead Temperature (10 sec)
300
C
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
2 to 6
V
V
I
Input Voltage
0 to V
CC
V
V
O
Output Voltage
0 to V
CC
V
T
op
Operating Temperature
-55 to 125
C
dt/dv
Input Rise and Fall Time (note 1) V
CC
= 3.0, 4.5 or 5.5
0 to 8
ns/V
74AC16244
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DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS ( C
L
= 50 pF, R
L
= 500
, Input t
r
= t
f
= 3n)
(*) Voltage range is 3.3V
0.3V
(**) Voltage range is 5.0V
0.5V
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25 C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
V
IH
High Level Input
Voltage
3.0
V
O
= 0.1 V or
V
CC
-0.1V
2.1
1.5
2.1
2.1
V
4.5
3.15
2.25
3.15
3.15
5.5
3.85
2.75
3.85
3.85
V
IL
Low Level Input
Voltage
3.0
V
O
= 0.1 V or
V
CC
-0.1V
1.5
0.9
0.9
0.9
V
4.5
2.25
1.35
1.35
1.35
5.5
2.75
1.65
1.65
1.65
V
OH
High Level Output
Voltage
3.0
I
O
=-50
A
2.9
2.99
2.9
2.9
V
4.5
I
O
=-50
A
4.4
4.49
4.4
4.4
5.5
I
O
=-50
A
5.4
5.49
5.4
5.4
3.0
I
O
=-12 mA
2.56
2.46
2.46
4.5
I
O
=-24 mA
3.86
3.76
3.76
5.5
I
O
=-24 mA
4.86
4.76
4.76
V
OL
Low Level Output
Voltage
3.0
I
O
=50
A
0.002
0.1
0.1
0.1
V
4.5
I
O
=50
A
0.001
0.1
0.1
0.1
5.5
I
O
=50
A
0.001
0.1
0.1
0.1
3.0
I
O
=12 mA
0.36
0.44
0.44
4.5
I
O
=24 mA
0.36
0.44
0.44
I
I
Input Leakage
Current
5.5
V
I
= V
CC
or GND
0.1
1
1
A
I
OZ
High Impedance
Output Leakage
Current
5.5
V
I
= V
IH
or V
IL
V
O
= V
CC
or GND
0.5
5
5
A
I
CC
Quiescent Supply
Current
5.5
V
I
= V
CC
or GND
8
80
80
A
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
C
L
(pF)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
t
PLH
t
PHL
Propagation Delay
Time
A to Y
3.3
(*)
6
8.5
11.5
11.5
ns
5.0
(**)
4.5
7.0
9.0
9.0
t
PZL
t
PZH
Output Enable
Time
3.3
(*)
8
10.5
14.0
14.0
ns
5.0
(**)
5.5
8.0
10.0
10.0
t
PLZ
t
PHZ
Output Disable
Time
3.3
(*)
7.3
9.0
11.5
11.5
ns
5.0
(**)
5.5
8.0
14.0
14.0
74AC16244
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CAPACITIVE CHARACTERISTICS
1) C
PD
is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
/ 16(per
Latch)
TEST CIRCUIT
C
L
= 50 pF or equivalent (includes jig and probe capacitance)
R
L
= R1 = 500
or equivalent
R
T
= Z
OUT
of pulse generator (typically 50
)
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
C
IN
Input Capacitance
7
10
10
10
pF
C
OUT
Output
Capacitance
14
pF
C
PD
Power Dissipation
Capacitance
(note 1)
5.0
f
IN
= 10MHz
25
pF
TEST
SWITCH
t
PLH
, t
PHL
Open
t
PZL
, t
PLZ
V
CC
t
PZH
, t
PHZ
GND