74ACT04
HEX INVERTER
April 1997
s
HIGH SPEED: t
PD
= 4.5 ns (TYP.) at V
CC
= 3.3V
s
LOW POWER DISSIPATION:
I
CC
= 4
A (MAX.) at T
A
= 25
o
C
s
COMPATIBLE WITH TTL OUTPUTS
V
IH
= 2V (MIN), V
IL
= 0.8V (MAX)
s
50
TRANSMISSION LINE DRIVING
CAPABILITY
s
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 24 mA (MIN)
s
BALANCED PROPAGATION DELAYS:
t
PLH
t
PHL
s
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 4.5V to 5.5V
s
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 04
s
IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The ACT04 is an advanced high-speed CMOS
HEX INVERTER
fabricated with sub-micron
silicon gate and double-layer metal wiring C
2
MOS
technology. It is ideal for low power applications
mantaining high speed operation similar to
equivalent Bipolar Schottky TTL.
The internal circuit is composed of 3 stages
including buffer output, which enables high noise
immunity and stabe output.
The device is designed to interface directly High
Speed CMOS systems with TTL, NMOS and
CMOS output voltage levels.
All
inputs and
outputs
are
equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES :
74ACT04B
74ACT04M
M
(Micro Package)
B
(Plastic Package)
1/7
INPUT AND OUTPUT EQUIVALENT CIRCUIT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Uni t
V
CC
Supply Voltage
-0.5 to +7
V
V
I
DC Input Voltage
-0.5 to V
CC
+ 0.5
V
V
O
DC Output Voltage
-0.5 to V
CC
+ 0.5
V
I
IK
DC Input Diode Current
20
mA
I
OK
DC Output Diode Current
20
mA
I
O
DC Output Current
50
mA
I
CC
or I
GND
DC V
CC
or Ground Current
300
mA
T
stg
Storage Temperature
-65 to +150
o
C
T
L
Lead Temperature (10 sec)
300
o
C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
TRUTH TABLE
A
Y
L
H
H
L
PIN DESCRIPTION
PI N No
SYMBOL
NAME AND F UNCTIO N
1, 3, 5, 9,
11, 13
1A to 6A
Data Inputs
2, 4, 6, 8,
10, 12
1Y to 6Y
Data Oututs
7
GND
Ground (0V)
14
V
CC
Positive Supply Voltage
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Valu e
Uni t
V
CC
Supply Voltage
4.5 to 5.5
V
V
I
Input Voltage
0 to V
CC
V
V
O
Output Voltage
0 to V
CC
V
T
op
Operating Temperature:
-40 to +85
o
C
dt/dv
Input Rise and Fall Time V
CC
= 4.5 to 5.5V (note 1)
8
ns/V
1) V
IN
from 0.8 V to 2.0 V
74ACT04
2/7
CAPACITIVE CHARACTERISTICS
Symbol
Parameter
Test Con dition s
Value
Unit
V
CC
(V)
T
A
= 25
o
C
-40 to 85
o
C
Mi n.
Typ.
Max.
Min .
Max.
C
IN
Input Capacitance
5.0
4
pF
C
PD
Power Dissipation
Capacitance (note 1)
5.0
37
pF
1) C
PD
is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to
Test Circuit). Average operating current can be obtained by the following equation. I
CC
(opr) = C
PD
V
CC
f
IN
+ I
CC
/n (per circuit)
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, R
L
= 500
, Input t
r
= t
f
=3 ns)
Symbol
Parameter
T est Cond iti on
Value
Unit
V
CC
(V)
T
A
= 25
o
C
-40 to 85
o
C
Mi n.
Typ.
Max.
Min .
Max.
t
PLH
t
PHL
Propagation Delay Time
5.0
(*)
1.5
4.5
7.5
1.0
8.5
ns
(*) Voltage range is 5V
0.5V
DC SPECIFICATIONS
Symbol
Parameter
Test Con dition s
Value
Unit
V
CC
(V)
T
A
= 25
o
C
-40 to 85
o
C
Mi n.
Typ.
Max.
Min .
Max.
V
IH
High Level Input Voltage
4.5
V
O
= 0.1 V or
V
CC
- 0.1 V
2.0
1.5
2.0
V
5.5
2.0
1.5
2.0
V
IL
Low Level Input Voltage
4.5
V
O
= 0.1 V or
V
CC
- 0.1 V
1.5
0.8
0.8
V
5.5
1.5
0.8
0.8
V
OH
High Level Output
Voltage
4.5
V
I
(*)
=
V
IH
or
V
IL
I
O
=-50
A
4.4
4.49
4.4
V
5.5
I
O
=-50
A
5.4
5.49
5.4
4.5
I
O
=-24 mA
3.86
3.76
5.5
I
O
=-24 mA
4.86
4.76
V
OL
Low Level Output
Voltage
4.5
V
I
(*)
=
V
IH
or
V
IL
I
O
=50
A
0.001
0.1
0.1
V
5.5
I
O
=50 mA
0.001
0.1
0.1
4.5
I
O
=24 mA
0.36
0.44
5.5
I
O
=24 mA
0.36
0.44
I
I
Input Leakage Current
5.5
V
I
= V
CC
or GND
0.1
1
A
I
CCT
Max I
CC
/Input
5.5
V
I
= V
CC
-2.1 V
0.6
1.5
mA
I
CC
Quiescent Supply
Current
5.5
V
I
= V
CC
or GND
4
40
mA
I
OLD
Dynamic Output Current
(note 1, 2)
5.5
V
OLD
= 1.65 V max
75
mA
I
OHD
V
OHD
= 3.85 V min
-75
mA
1) Maximum test duration 2ms, one output loaded at time
2) Incident wave switching is guaranteed on transmission lines with impedances as low as 50
.
(*) All outputs loaded.
74ACT04
3/7
TEST CIRCUIT
C
L
= 50 pF or equivalent (includes jig and probe capacitance)
R
L
= R
1
= 500
or equivalent
R
T
= Z
OUT
of pulse generator (typically 50
)
WAVEFORM: PROPAGATION DELAYS (f=1MHz)
74ACT04
4/7
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
a1
0.51
0.020
B
1.39
1.65
0.055
0.065
b
0.5
0.020
b1
0.25
0.010
D
20
0.787
E
8.5
0.335
e
2.54
0.100
e3
15.24
0.600
F
7.1
0.280
I
5.1
0.201
L
3.3
0.130
Z
1.27
2.54
0.050
0.100
P001A
Plastic DIP14 MECHANICAL DATA
74ACT04
5/7
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
1.75
0.068
a1
0.1
0.2
0.003
0.007
a2
1.65
0.064
b
0.35
0.46
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.5
0.019
c1
45 (typ.)
D
8.55
8.75
0.336
0.344
E
5.8
6.2
0.228
0.244
e
1.27
0.050
e3
7.62
0.300
F
3.8
4.0
0.149
0.157
G
4.6
5.3
0.181
0.208
L
0.5
1.27
0.019
0.050
M
0.68
0.026
S
8 (max.)
P013G
SO14 MECHANICAL DATA
74ACT04
6/7
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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74ACT04
7/7
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