1/10
February 2003
s
HIGH SPEED: t
PD
= 5.3 ns (TYP.) at V
CC
= 3V
s
5V TOLERANT INPUT
s
LOW POWER DISSIPATION:
I
CC
= 4
A (MAX.) at T
A
=25C
s
INPUT VOLTAGE LEVEL : V
IL
= 0.8, V
IH
=2V
AT V
CC
=3V
s
POWER DOWN PROTECTION ON INPUTS
& OUTPUTS
s
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 4 mA (MIN)
s
BALANCED PROPAGATION DELAYS:
t
PLH
t
PHL
s
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 3.6V (1.2V Data Retention)
s
IMPROVED LATCH-UP IMMUNITY
s
LOW NOISE: V
OLP
= 0.3V (TYP.) AT V
CC
=3V
DESCRIPTION
The 74LVX16244 is an advanced high-speed
CMOS
16-BIT
BUS
BUFFER
(3-STATE)
fabricated
with
sub-micron silicon gate and
double-layer metal wiring C
2
MOS technology.
Any
nG
output
control
governs
four
BUS
BUFFERS.
Output
Enable
inputs
(nG)
tied
together give full 16 bit operation.
When nG is LOW, the outputs are enabled. When
nG is HIGH, the output are in high impedance
state.
The device is designed to be used with 3-state
memory address drivers, etc.
Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on
inputs with no regard to the supply voltage. This
device can be used to interface 5V to 3V.
All
inputs
and
outputs
are
equipped
with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
74LVX16244
16-BIT BUS BUFFER (NON INVERTED)
WITH 3-STATE OUTPUTS, 5V TOLERANT INPUT
ORDER CODES
PACKAGE
TUBE
T & R
TSSOP
74LVX16244TTR
TSSOP
PIN CONNECTION
74LVX16244
2/10
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
TRUTH TABLE
X : Don`t Care
Z : High Impedance
IEC LOGIC SYMBOLS
PIN No
SYMBOL
NAME AND FUNCTION
1
1G
Output Enable Input
2, 3, 5, 6
1Y1 to 1Y4 Data Outputs
8, 9, 11, 12
2Y1 to 2Y4 Data Outputs
13, 14, 16, 17
3Y1 to 3Y4 Data Outputs
19, 20, 22, 23
4Y1 to 4Y4 Data Outputs
24
4G
Output Enable Input
25
3G
Output Enable Input
30, 29, 27, 26
4A1 to 4A4 Data Outputs
36, 35, 33, 32
3A1 to 3A4 Data Outputs
41, 40, 38, 37
2A1 to 2A4 Data Outputs
47, 46, 44, 43
1A1 to 1A4 Data Outputs
48
2G
Output Enable Input
4, 10, 15, 21,
28, 34, 39, 45
GND
Ground (0V)
7, 18, 31, 42
V
CC
Positive Supply Voltage
INPUTS
OUTPUT
G
An
Yn
L
L
L
L
H
H
H
X
Z
74LVX16244
3/10
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
RECOMMENDED OPERATING CONDITIONS
1) Truth Table guaranteed: 1.2 to 3.6V
2) V
IN
from 0.8 to 2.0V
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
-0.5 to +7.0
V
V
I
DC Input Voltage
-0.5 to +7.0
V
V
O
DC Output Voltage
-0.5 to V
CC
+ 0.5
V
I
IK
DC Input Diode Current
- 20
mA
I
OK
DC Output Diode Current
20
mA
I
O
DC Output Current
25
mA
I
CC
or I
GND
DC V
CC
or Ground Current
50
mA
T
stg
Storage Temperature
-65 to +150
C
T
L
Lead Temperature (10 sec)
300
C
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage (note 1)
2 to 3.6
V
V
I
Input Voltage
0 to 5.5
V
V
O
Output Voltage
0 to V
CC
V
T
op
Operating Temperature
-55 to 125
C
dt/dv
Input Rise and Fall Time (note 2) (V
CC
= 3.0)
0 to 100
ns/V
74LVX16244
4/10
DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS (Input t
r
= t
f
= 3ns)
(*) Voltage range is 3.3V
0.3V
Note 1 : Parameter guaranteed by design. t
soLH
= |t
pLHm
- t
pLHn
|, t
soHL
= |t
pHLm
- t
pHLn
|
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
V
IH
High Level Input
Voltage
2.0
1.5
1.5
1.5
V
3.0
2.0
2.0
2.0
3.6
2.4
2.4
2.4
V
IL
Low Level Input
Voltage
2.0
0.5
0.5
0.5
V
3.0
0.8
0.8
0.8
3.6
0.8
0.8
0.8
V
OH
High Level Output
Voltage
2.0
I
O
=-50
A
1.9
2.0
1.9
1.9
V
3.0
I
O
=-50
A
2.9
3.0
2.9
2.9
3.0
I
O
=-4 mA
2.58
4.5
2.48
2.4
V
OL
Low Level Output
Voltage
2.0
I
O
=50
A
0.0
0.1
0.1
0.1
V
3.0
I
O
=50
A
0.0
0.1
0.1
0.1
3.0
I
O
=4 m
0.36
0.44
0.55
Ioz
High Impedance
Output Leakage
Current
3.6
V
I
= V
IH
or V
IL
V
O
= V
CC
or GND
0.25
2.5
2.5
A
I
I
Input Leakage
Current
3.6
V
I
= 5V or GND
0.1
1
1
A
I
CC
Quiescent Supply
Current
3.6
V
I
= V
CC
or GND
4
40
40
A
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
C
L
(pF)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
t
PLH
t
PHL
Propagation Delay
Time
2.7
15
6.1
11.4
1.0
13.5
1.0
15.0
ns
2.7
50
8.6
14.9
1.0
17.0
1.0
18.0
3.3
(*)
15
5.3
8.4
1.0
10.0
1.0
10.0
3.3
(*)
50
7.8
11.9
1.0
13.5
1.0
13.5
t
PZL
t
PZH
Output Enable
Time
2.7
15
R
L
= 1K
7.1
13.8
1.0
16.5
1.0
17.5
ns
2.7
50
R
L
= 1K
9.6
17.3
1.0
20.0
1.0
21.0
3.3
(*)
15
R
L
= 1K
6.6
10.6
1.0
12.5
1.0
12.5
3.3
(*)
50
R
L
= 1K
9.1
14.1
1.0
16.0
1.0
16.0
t
PLZ
t
PHZ
Output Disable
Time
2.7
50
R
L
= 1K
11.6
16.0
1.0
19.0
1.0
20.5
ns
3.3
(*)
50
R
L
= 1K
10.3
14.0
1.0
16.0
1.0
16.0
t
OSLH
t
OSHL
Output to Output
Skew Time (note
1,2)
2.7
50
0.5
1.0
1.5
1.5
ns
3.3
(*)
50
0.5
1.0
1.5
1.5
74LVX16244
5/10
CAPACITIVE CHARACTERISTICS
1) C
PD
is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
/16(per
circuit)
DYNAMIC SWITCHING CHARACTERISTICS
1) Worst case package.
2) Max number of outputs defined as (n). Data inputs are driven 0V to 3.3V, (n-1) outputs switching and one output at GND.
3) Max number of data inputs (n) switching. (n-1) switching 0V to 3.3V. Inputs under test switching: 3.3V to threshold (V
ILD
), 0V to threshold
(V
IHD
), f=1MHz.
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
C
IN
Input Capacitance
6
10
10
10
pF
C
OUT
Output
Capacitance
8
pF
C
PD
Power Dissipation
Capacitance
(note 1)
3.0
f
IN
= 10MHz
20
pF
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
V
OLP
Dynamic Low
Voltage Quiet
Output (note 1, 2)
3.3
C
L
= 50 pF
0.3
0.8
V
V
OLV
-0.8
-0.3
V
IHD
Dynamic High
Voltage Input
(note 1, 3)
3.3
2.0
V
V
ILD
Dynamic Low
Voltage Input
(note 1, 3)
3.3
0.8
V
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