1/10
July 2003
s
HIGH SPEED: t
PD
= 5.3 ns (TYP.) at V
CC
= 3V
s
5V TOLERANT INPUT
s
LOW POWER DISSIPATION:
I
CC
= 4
A (MAX.) at T
A
=25C
s
INPUT VOLTAGE LEVEL: V
IL
= 0.8, V
IH
=2V
AT V
CC
=3V
s
POWER DOWN PROTECTION ON INPUTS
& OUTPUTS
s
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 4 mA (MIN)
s
BALANCED PROPAGATION DELAYS:
t
PLH
t
PHL
s
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 3.6V (1.2V Data Retention)
s
IMPROVED LATCH-UP IMMUNITY
s
LOW NOISE: V
OLP
= 0.3V (TYP.) AT Vcc=3V
DESCRIPTION
The 74LVX16245 is an advanced high-speed
CMOS 16-BIT BUS TRANSCEIVER (3-STATE)
fabricated
with
sub-micron silicon gate and
double-layer metal wiring C
2
MOS technology.
This IC is intended for two-way asynchronous
communication
between
data
busses;
the
direction of data transmission is determined by
DIR input. The enable input G can be used to
disable the device so that the busses are
effectively isolated.
All
inputs
and
outputs
are
equipped
with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
All floating bus terminals during High Z State must
be held HIGH or LOW.
74LVX16245
16-BIT BUS TRANSCEIVER
WITH 3-STATE OUTPUTS, 5V TOLERANT INPUTS
ORDER CODES
PACKAGE
TUBE
T & R
TSSOP
74LVX16245TTR
TSSOP
PIN CONNECTION
74LVX16245
2/10
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
TRUTH TABLE
X : Don`t Care
Z : High Impedance
IEC LOGIC SYMBOLS
PIN No
SYMBOL
NAME AND FUNCTION
1
1DIR
Directional Control
2, 3, 5, 6, 8, 9,
11, 12
1B1 to 1B8 Data Inputs/Outputs
13, 14, 16, 17,
19, 20, 22, 23
2B1 to 2B8 Data Inputs/Outputs
24
2DIR
Directional Control
25
2G
Output Enable Input
36, 35, 33, 32,
30, 29, 27, 26
2A1 to 2A8 Data Inputs/Outputs
47, 46, 44, 43,
41, 40, 38, 38
1A1 to 1A8 Data Inputs/Outputs
48
1G
Output Enable Input
4, 10, 15, 21,
28, 34, 39, 45
GND
Ground (0V)
7, 18, 31, 42
V
CC
Positive Supply Voltage
INPUTS
FUNCTION
OUTPUT
G
DIR
A BUS
B BUS
Yn
L
L
OUTPUT
INPUT
A = B
L
H
INPUT
OUTPUT
B = A
H
X
Z
Z
Z
74LVX16245
3/10
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
RECOMMENDED OPERATING CONDITIONS
1) Truth Table guaranteed: 1.2 to 3.6V
1) V
IN
from 0.8 to 2.0V
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
-0.5 to +7.0
V
V
I
DC Input Voltage (DIR, G)
-0.5 to +7.0
V
V
I/O
Bus I/O Voltage
-0.5 to V
CC
+ 0.5
V
V
O
DC Output Voltage
-0.5 to V
CC
+ 0.5
V
I
IK
DC Input Diode Current
- 20
mA
I
OK
DC Output Diode Current
20
mA
I
O
DC Output Current
25
mA
I
CC
or I
GND
DC V
CC
or Ground Current
75
mA
T
stg
Storage Temperature
-65 to +150
C
T
L
Lead Temperature (10 sec)
300
C
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage (note 1)
2 to 3.6
V
V
I
Input Voltage (DIR, G)
0 to 5.5
V
V
I/O
Bus I/O Voltage
0 to V
CC
V
V
O
Output Voltage
0 to V
CC
V
T
op
Operating Temperature
-55 to 125
C
dt/dv
Input Rise and Fall Time (note 2) (V
CC
= 3.0)
0 to 100
ns/V
74LVX16245
4/10
DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS (Input t
r
= t
f
= 3ns)
(*) Voltage range is 3.3V
0.3V
Note 1: Parameter guaranteed by design. t
soLH
= |t
pLHm
- t
pLHn
|, t
soHL
= |t
pHLm
- t
pHLn
|
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
V
IH
High Level Input
Voltage
2.0
1.5
1.5
1.5
V
3.0
2.0
2.0
2.0
3.6
2.4
2.4
2.4
V
IL
Low Level Input
Voltage
2.0
0.5
0.5
0.5
V
3.0
0.8
0.8
0.8
3.6
0.8
0.8
0.8
V
OH
High Level Output
Voltage
2.0
I
O
=-50
A
1.9
2.0
1.9
1.9
V
3.0
I
O
=-50
A
2.9
3.0
2.9
2.9
3.0
I
O
=-4 mA
2.58
4.5
2.48
2.4
V
OL
Low Level Output
Voltage
2.0
I
O
=50
A
0.0
0.1
0.1
V
3.0
I
O
=50
A
0.0
0.1
0.1
3.0
I
O
=4 m
0.36
0.44
0.55
Ioz
High Impedance
Output Leakage
Current
5.5
V
I
= V
IH
or V
IL
V
O
= V
CC
or GND
0.25
2.5
2.5
A
I
I
Input Leakage
Current
0 to
5.5
V
I
= 5.5V or GND
0.1
1
1
A
I
CC
Quiescent Supply
Current
5.5
V
I
= V
CC
or GND
4
40
40
A
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
C
L
(pF)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
t
PLH
t
PHL
Propagation Delay
Time
2.7
15
5.7
9.0
1.0
10.5
1.0
10.5
ns
2.7
50
8.0
12.3
1.0
14.0
1.0
14.0
3.3
(*)
15
5.3
8.4
1.0
10.0
1.0
10.0
3.3
(*)
50
7.8
11.9
1.0
13.5
1.0
13.5
t
PZL
t
PZH
Output Disable
Time
2.7
15
R
L
= 1K
7.0
11.0
1.0
13.5
1.0
13.5
ns
2.7
50
R
L
= 1K
9.6
15.1
1.0
16.5
1.0
16.5
3.3
(*)
15
R
L
= 1K
6.6
10.6
1.0
12.5
1.0
12.5
3.3
(*)
50
R
L
= 1K
9.1
14.1
1.0
16.0
1.0
16.0
t
PLZ
t
PHZ
Output Enable
Time
2.7
50
R
L
= 1K
10.8
15.0
1.0
16.5
1.0
16.5
ns
3.3
(*)
50
R
L
= 1K
10.3
14.0
1.0
16.0
1.0
16.0
t
OSLH
t
OSHL
Output to Output
Skew time (note 1)
3.3
(*)
50
1.5
1.5
1.5
ns
3.3
(*)
50
1.0
1.0
1.0
74LVX16245
5/10
CAPACITIVE CHARACTERISTICS
1) C
PD
is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
/8 (per circuit)
DYNAMIC SWITCHING CHARACTERISTICS
1) Worst case package.
2) Max number of outputs defined as (n). Data inputs are driven 0V to 3.3V, (n-1) outputs switching and one output at GND.
3) Max number of data inputs (n) switching. (n-1) switching 0V to 3.3V. Inputs under test switching: 3.3V to threshold (V
ILD
), 0V to threshold
(V
IHD
), f=1MHz.
Symbol
Parameter
Test Condition
Value
Unit
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
C
IN
Input Capacitance
4
10
10
10
pF
C
I/O
Output
Capacitance
8
pF
C
PD
Power Dissipation
Capacitance
(note 1)
21
pF
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
V
OLP
Dynamic Low
Voltage Quiet
Output (note 1, 2)
3.3
C
L
= 50 pF
0.3
0.8
V
V
OLV
-0.8
-0.3
V
IHD
Dynamic High
Voltage Input
(note 1, 3)
3.3
2.0
V
V
ILD
Dynamic Low
Voltage Input
(note 1, 3)
3.3
0.8
V
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