1/10
April 2004
s
5V TOLERANT INPUTS
s
HIGH SPEED: t
PD
= 4.2ns (MAX.) at V
CC
= 3V
s
LOW POWER DISSIPATION:
I
CC
= 1
A (MAX.) at T
A
= 25C
s
POWER DOWN PROTECTION ON INPUTS
AND OUTPUTS
s
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 24mA (MIN) at V
CC
= 3V
s
BALANCED PROPAGATION DELAYS:
t
PLH
t
PHL
s
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 1.65V to 5.5V
(1.2V Data Retention)
s
IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74LX1G70 is an advanced high-speed CMOS
SINGLE BUFFER fabricated with sub-micron
silicon gate and double-layer metal wiring C
2
MOS
technology.
It is ideal for 1.65 to 5.5 V
CC
operations and low
power and low noise applications. The internal
circuit is composed of 3 stages including buffer
output, which provide high noise immunity and
stable output.
Power down protection is provided on input and
output and 0 to 7V can be accepted on inputs with
no regard to the supply voltage. It can be
interfaced to 5V signal environment for inputs in
mixed 3.3/5V system. All inputs and outputs are
equipped with protection circuits against static
discharge.
74LX1G70
SINGLE BUFFER
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE
T & R
SOT23-5L
74LX1G70STR
SOT323-5L
74LX1G70CTR
SOT323-5L
SOT23-5L
74LX1G70
2/10
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Rating are those value beyond which damage to the device may occur. Functional operation under these condition is not
implied
1) I
O
absolute maximum rating must be observed
2) V
O
< GND, V
O
> V
CC
PIN N
SYMBOL
NAME AND FUNCTION
1
NC
Not Connected
2
1A
Data Input
4
1Y
Data Output
3
GND
Ground (0V)
5
V
CC
Positive Supply Voltage
A
Y
L
L
H
H
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
-0.5 to +7.0
V
V
I
DC Input Voltage
-0.5 to +7.0
V
V
O
DC Output Voltage (V
CC
= 0V)
-0.5 to +7.0
V
V
O
DC Output Voltage (High or Low State) (note 1)
-0.5 to V
CC
+ 0.5
V
I
IK
DC Input Diode Current
- 50
mA
I
OK
DC Output Diode Current (note 2)
- 50
mA
I
O
DC Output Current
50
mA
I
CC
or I
GND
DC V
CC
or Ground Current per Supply Pin
50
mA
T
stg
Storage Temperature
-65 to +150
C
T
L
Lead Temperature (10 sec)
300
C
74LX1G70
3/10
RECOMMENDED OPERATING CONDITIONS
1) Truth Table guaranteed: 1.2V to 3.6V
2) V
IN
from 0.8V to 2V at V
CC
= 3.0V
DC SPECIFICATION
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage (note 1)
1.65 to 5.5
V
V
I
Input Voltage
0 to 5.5
V
V
O
Output Voltage (V
CC
= 0V)
0 to 5.5
V
V
O
Output Voltage (High or Low State)
0 to V
CC
V
I
OH
, I
OL
High or Low Level Output Current (V
CC
= 4.5 to 5.5V)
32
mA
I
OH
, I
OL
High or Low Level Output Current (V
CC
= 3.0 to 3.6V)
24
mA
I
OH
, I
OL
High or Low Level Output Current (V
CC
= 2.7 to 3.0V)
16
mA
I
OH
, I
OL
High or Low Level Output Current (V
CC
= 2.3 to 2.7V)
8
mA
I
OH
, I
OL
High or Low Level Output Current (V
CC
= 1.65 to 2.3V)
4
mA
T
op
Operating Temperature
-55 to 125
C
dt/dv
Input Rise and Fall Time (note 2)
0 to 10
ns/V
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
-40 to 85 C
-55 to 125 C
Min.
Max.
Min.
Max.
V
IH
High Level Input
Voltage
1.65 to 1.95
0.75V
CC
0.75V
CC
V
2.3 to 2.7
0.7V
CC
0.7V
CC
3.0 to 5.5
0.7V
CC
0.7V
CC
V
IL
Low Level Input
Voltage
1.65 to 1.95
0.25V
CC
0.25V
CC
V
2.3 to 2.7
0.3V
CC
0.3V
CC
3.0 to 5.5
0.3V
CC
0.3V
CC
V
OH
High Level Output
Voltage
1.65 to 4.5
I
O
=-100
A
V
CC
-0.1
V
CC
-0.1
V
1.65
I
O
=-4 mA
1.2
1.2
2.3
I
O
=-8 mA
1.9
1.9
3.0
I
O
=-16 mA
2.4
2.4
I
O
=-24 mA
2.2
2.2
4.5
I
O
=-32 mA
3.8
3.8
V
OL
Low Level Output
Voltage
1.65 to 4.5
I
O
=100
A
0.1
0.1
V
1.65
I
O
=4 mA
0.45
0.45
2.3
I
O
=8 mA
0.3
0.3
3.0
I
O
=16 mA
0.4
0.4
I
O
=24 mA
0.55
0.55
4.5
I
O
=32 mA
0.55
0.55
I
I
Input Leakage
Current
1.65 to 5.5
V
I
= 0 to 5.5V
10
10
A
I
off
Power Off Leakage
Current
0
V
I
or V
O
= 5.5V
10
10
A
I
CC
Quiescent Supply
Current
1.65 to 5.5
V
I
= V
CC
or GND
10
10
A
74LX1G70
4/10
AC ELECTRICAL CHARACTERISTICS
CAPACITANCE CHARACTERISTICS
1) C
PD
is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
C
L
(pF)
R
L
(
)
t
s
= t
r
(ns)
-40 to 85 C
-55 to 125 C
Min.
Max.
Min.
Max.
t
PLH
t
PHL
Propagation Delay
Time
1.65 to 1.95
15
1M
3.0
2
12.0
2
12.0
ns
2.3 to 2.7
2
7.0
2
7.0
3.0 to 3.6
1
4.7
1
4.7
4.5 to 5.5
1
4.1
1
4.1
1.65 to 1.95
30
1000
2.0
2
7.5
2
7.5
2.3 to 2.7
30
500
2.0
2
5.5
2
5.5
2.7
50
500
2.5
1
5.2
1
5.2
3.0 to 3.6
50
500
2.5
1
4.2
1
4.2
4.5 to 5.5
50
500
2.5
1
3.7
1
3.7
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25 C
Min.
Typ.
Max.
C
IN
Input Capacitance
0
4
pF
C
PD
Power Dissipation Capacitance
(note 1)
1.8
f
IN
= 10MHz
16
pF
2.5
18
3.3
20
74LX1G70
5/10
TEST CIRCUIT
R
T
= Z
OUT
of pulse generator (typically 50
)
TEST CIRCUIT AND WAVEFORM SYMBOL VALUE
WAVEFORM: PROPAGATION DELAY (f=1MHz; 50% duty cycle)
Symbol
V
CC
1.65 to 1.95V
2.3 to 2.7V
2.7 to 5.5V
C
L
15pF/30pF
15pF/30pF
15pF/50pF
R
L
1M
/
1000
500
500
V
IH
V
CC
V
CC
V
CC
V
M
V
CC
/2
V
CC
/2
V
CC
/2
t
r
= t
r
<2.0ns
<2.0ns
<2.5ns
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