1/9
June 2003
s
HIGH SPEED: t
PD
= 3.8ns (TYP.) at V
CC
= 5V
s
LOW POWER DISSIPATION:
I
CC
= 1
A(MAX.) at T
A
= 25C
s
HIGH NOISE IMMUNITY:
V
NIH
= V
NIL
= 28% V
CC
(MIN.)
s
POWER DOWN PROTECTION ON INPUTS
AND OUTPUTS
s
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 8mA (MIN) at V
CC
= 4.5V
s
BALANCED PROPAGATION DELAYS:
t
PLH
t
PHL
s
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 5.5V
s
IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74V2G125 is an advanced high-speed CMOS
DUAL BUS BUFFER fabricated with sub-micron
silicon gate and double-layer metal wiring C
2
MOS
technology.
3-STATE control input nG has to be set HIGH to
place the output into the high impedance state.
Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on
inputs with no regard to the supply voltage.
This device can be used to interface 5V to 3V
systems and it is ideal for portable applications
like personal digital assistant, camcorder and all
battery-powered equipment.
All
inputs
and
outputs
are
equipped
with
protection circuits against static discharge, giving
them ESD immunity and transient excess voltage.
74V2G125
DUAL BUS BUFFER (3-STATE)
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE
T & R
SOT23-8L
74V2G125STR
SOT23-8L
74V2G125
2/9
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
TRUTH TABLE
X: "H" or "L"
Z: High Impedance
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
1) V
CC
=0V or nG=V
CC
(Output in High Impedance state)
2) High or Low State
RECOMMENDED OPERATING CONDITIONS
1) V
CC
=0V or nG=V
CC
(Output in High Impedance state)
2) High or Low State
3) V
IN
from 30% to 70% of V
CC
PIN No
SYMBOL
NAME AND FUNCTION
1, 7
1G, 2G
Output Enable Inputs
2, 5
1A, 2A
Data Inputs
3, 6
2Y, 1Y
Data Outputs
4
GND
Ground (0V)
8
V
CC
Positive Supply Voltage
A
G
Y
X
H
Z
L
L
L
H
L
H
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
-0.5 to +7.0
V
V
I
DC Input Voltage
-0.5 to +7.0
V
V
O
DC Output Voltage (see note 1)
-0.5 to +7.0
V
V
O
DC Output Voltage (see note 2)
-0.5 to V
CC
+ 0.5
V
I
IK
DC Input Diode Current
-
20
mA
I
OK
DC Output Diode Current
-
20
mA
I
O
DC Output Current
25
mA
I
CC
or I
GND
DC V
CC
or Ground Current
50
mA
T
stg
Storage Temperature
-65 to +150
C
T
L
Lead Temperature (10 sec)
260
C
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
2 to 5.5
V
V
I
Input Voltage
0 to 5.5
V
V
O
Output Voltage (see note 1)
0 to 5.5
V
V
O
Output Voltage (see note 2)
0 to V
CC
V
T
op
Operating Temperature
-55 to 125
C
dt/dv
Input Rise and Fall Time (note 3) (V
CC
= 3.3
0.3V)
(V
CC
= 5.0
0.5V)
0 to 100
0 to 20
ns/V
ns/V
74V2G125
3/9
DC SPECIFICATION
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
V
IH
High Level Input
Voltage
2.0
1.5
1.5
1.5
V
3.0 to
5.5
0.7V
CC
0.7V
CC
0.7V
CC
V
IL
Low Level Input
Voltage
2.0
0.5
0.5
0.5
V
3.0 to
5.5
0.3V
CC
0.3V
CC
0.3V
CC
V
OH
High Level Output
Voltage
2.0
I
O
=-50
A
1.9
2.0
1.9
1.9
V
3.0
I
O
=-50
A
2.9
3.0
2.9
2.9
4.5
I
O
=-50
A
4.4
4.5
4.4
4.4
3.0
I
O
=-4 mA
2.58
2.48
2.4
4.5
I
O
=-8 mA
3.94
3.8
3.7
V
OL
Low Level Output
Voltage
2.0
I
O
=50
A
0.0
0.1
0.1
0.1
V
3.0
I
O
=50
A
0.0
0.1
0.1
0.1
4.5
I
O
=50
A
0.0
0.1
0.1
0.1
3.0
I
O
=4 mA
0.36
0.44
0.55
4.5
I
O
=8 mA
0.36
0.44
0.55
I
OZ
High Impedance
Output Leakage
Current
5.5
V
I
= V
IH
or V
IL
V
O
= 5.5 or GND
0.25
2.5
5
A
I
I
Input Leakage
Current
0 to
5.5
V
I
= 5.5V or GND
0.1
1
1
A
I
CC
Quiescent Supply
Current
5.5
V
I
= V
CC
or GND
1
10
20
A
I
OPD
Power down Output
Leakage Current
0
V
O
= 5.5
0.5
5
10
A
74V2G125
4/9
AC ELECTRICAL CHARACTERISTICS (Input t
r
= t
f
= 3ns)
(*) Voltage range is 3.3V
0.3V
(**) Voltage range is 5.0V
0.5V
CAPACITIVE CHARACTERISTICS
1) C
PD
is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
/2
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
C
L
(pF)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
t
PLH
t
PHL
Propagation Delay
Time
3.3
(*)
15
5.1
7.5
1.0
8.5
1.0
9.5
ns
3.3
(*)
50
5.6
8.0
1.0
9.5
1.0
10.5
5.0
(**)
15
3.8
5.5
1.0
6.5
1.0
7.5
5.0
(**)
50
4.3
6.5
1.0
7.5
1.0
8.5
t
PLZ
t
PHZ
Output Disable
Time
3.3
(*)
15
R
L
= 1 K
5.4
8.0
1.0
9.0
1.0
10.0
ns
3.3
(*)
50
R
L
= 1 K
7.9
11.5
1.0
12.5
1.0
13.5
5.0
(**)
15
R
L
= 1 K
3.6
5.0
1.0
6.0
1.0
7.0
5.0
(**)
50
R
L
= 1 K
5.1
7.0
1.0
8.0
1.0
9.0
t
PZL
t
PZH
Output Enable
Time
3.3
(*)
15
R
L
= 1 K
5.4
7.6
1.0
9.5
1.0
10.5
ns
3.3
(*)
50
R
L
= 1 K
5.9
8.5
1.0
10.0
1.0
11.0
5.0
(**)
15
R
L
= 1 K
3.7
5.9
1.0
7.0
1.0
8.0
5.0
(**)
50
R
L
= 1 K
4.1
6.5
1.0
7.5
1.0
8.5
Symbol
Parameter
Test Condition
Value
Unit
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
C
IN
Input Capacitance
4
10
10
10
pF
C
OUT
Output
Capacitance
6
pF
C
PD
Power Dissipation
Capacitance
(note 1)
14
pF
74V2G125
5/9
TEST CIRCUIT TEST CIRCUIT
C
L
=15/50pF or equivalent (includes jig and probe capacitance)
R1 = 1K
or equivalent
R
T
= Z
OUT
of pulse generator (typically 50
)
WAVEFORM 1 : PROPAGATION DELAYS (f=1MHz; 50% duty cycle)
TEST
SWITCH
t
PLH
, t
PHL
Open
t
PZL
, t
PLZ
V
CC
t
PZH
, t
PHZ
GND
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