1/9
May 2002
s
HIGH SPEED: t
PD
= 0.5ns (TYP.) at V
CC
= 5V
s
LOW POWER DISSIPATION:
I
CC
= 1
A(MAX.) at T
A
=25C
s
LOW "ON" RESISTANCE at V
CC
=5.0V:
R
ON
= 7
(TYP), V
IN
=0V, I
I/O
=30mA
R
ON
= 20
(TYP), V
IN
=2.4V, I
I/O
=10mA
s
OPERATING VOLATGE RANGE:
V
CC
(OPR.) = 3.0V TO 5.5V
s
5V TOLERANT ON CONTROL PIN
s
HIGH NOISE IMMUNITY:
V
NIH
= V
NIL
= 28% V
CC
(MIN.)
DESCRIPTION
The 74V2G384 is an advanced high-speed CMOS
DUAL HIGH SPEED BUS SWITCH fabricated in
silicon gate C
2
MOS technology. It's designed to
operate from 3V to 5.5V, making this device ideal
for portable applications. It's offers 7
Resistance
typical value at V
CC
=4.5V. Additional key feature
are fast switching speed (t
ON
=3.8ns, t
OFF
=3.3ns
Typical) and Low Power Consumption.
The OE input is provided to control the switch; the
switch is ON when the OE input is held low and
OFF when OE is held high.
It's available in the commercial and extended
temperature range in SOT23-8L and SC-70-8L
package.
74V2G384
DUAL HIGH SPEED BUS SWITCH
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE
T & R
SOT23-8L
74V2G384STR
SOT323-8L
74V2G384CTR
SOT323-8L
SOT23-8L
74V2G384
2/9
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
TRUTH TABLE
* High Impedance State
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
RECOMMENDED OPERATING CONDITIONS
1) V
IN
from 30% to 70% of V
CC
on control pin
PIN No
SYMBOL
NAME AND FUNCTION
1, 5
1I/O, 2I/O
Independent Input/Output
2, 6
1O/I, 2O/I
Independent Output/Input
7, 3
1OE, 2OE
Enable Input (Active
HIGH)
4
GND
Ground (0V)
8
V
CC
Positive Supply Voltage
OE
SWITCH FUNCTION
L
ON
H
OFF *
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
-0.5 to +7.0
V
V
I
DC Input Voltage
-0.5 to V
CC
+ 0.5
V
V
IC
DC Control Input Voltage
-0.5 to +7.0
V
V
O
DC Output Voltage
-0.5 to V
CC
+ 0.5
V
I
IK
DC Input Diode Current
20
mA
I
IK
DC Control Input Diode Current
- 20
mA
I
OK
DC Output Diode Current
20
mA
I
O
DC Output Current
50
mA
I
CC
or I
GND
DC V
CC
or Ground Current
50
mA
T
stg
Storage Temperature
-65 to +150
C
T
L
Lead Temperature (10 sec)
300
C
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
3 to 5.5
V
V
I
Input Voltage
0 to V
CC
V
V
IC
Control Input Voltage
0 to 5.5
V
V
O
Output Voltage
0 to V
CC
V
T
op
Operating Temperature
-55 to 125
C
dt/dv
Input Rise and Fall Time (note 1) V
CC
= 5.0V
0 to 20
ns/V
74V2G384
3/9
DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS (C
L
= 50pF, Input t
r
= t
f
= 3ns)
(*) Voltage range is 3.3V
0.3V
(**) Voltage range is 5.0V
0.5V
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
V
IH
High Level Input
Voltage
2.0
1.5
1.5
1.5
V
3.0 to
5.5
0.7V
CC
0.7V
CC
0.7V
CC
V
IL
Low Level Input
Voltage
2.0
0.5
0.5
0.5
V
3.0 to
5.5
0.3V
CC
0.3V
CC
0.3V
CC
R
ON
ON Resistance
3.0
V
IC
= V
IL
V
I/O
= GND
I
I/O
30 mA
9
13
20
4.5
V
IC
= V
IL
V
I/O
= GND
I
I/O
30 mA
7
10
15
R
ON
ON Resistance
3.0
V
IC
= V
IL
V
I/O
= 1.5V
I
I/O
10 mA
32
60
80
4.5
V
IC
= V
IL
V
I/O
= 2.4V
I
I/O
10 mA
20
40
60
I
OFF
Input/Output
Leakage Current
(SWITCH OFF)
5.5
V
OS
= V
CC
to GND
V
IS
= V
CC
to GND
V
IC
= V
IH
0.1
1
10
A
I
IN
Control Input
Leakage Current
0 to
5.5
V
IC
= 5.5V or GND
0.1
1.0
1.0
A
I
CC
Quiescent Supply
Current
5.5
V
I
= V
CC
or GND
1
10
20
A
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
t
PD
Delay Time
3.3
(*)
t
r
= t
f
= 6ns
0.8
1.2
1.5
2.0
ns
5.0
(**)
t
r
= t
f
= 6ns
0.5
0.8
1.0
1.5
t
PLZ
t
PHZ
Output Disable
Time
3.3
(*)
R
1
= 500
V
IN
=1.5V
8.5
12.0
14.0
16.0
ns
5.0
(**)
R
1
= 500
V
IN
=2.4V
3.8
6.5
9.0
10.0
t
PZL
t
PZH
Output Enable
Time
3.3
(*)
R
1
= 1K
V
IN
=1.5V
7.3
12.0
14.0
16.0
ns
5.0
(**)
R
1
= 1K
V
IN
=2.4V
3.3
5.0
7.5
8.5
74V2G384
4/9
CAPACITIVE CHARACTERISTICS
1) C
PD
is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
C
IN
Input Capacitance
4
10
10
10
pF
C
I/O
Output
Capacitance
7
pF
C
PD
Power Dissipation
Capacitance
(note 1)
3.3
2.5
pF
5.0
3
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