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TARGET DATA
June 2003
This is preliminary information on a new product forseen to be developped. Details are subject to change without notice
STS5N150
N-CHANNEL 150V - 0.045
- 5A SO-8
LOW GATE CHARGE STripFETTM POWER MOSFET
s
TYPICAL R
DS
(on) = 0.045
s
EXTREMELY HIGH dv/dt CAPABILITY
s
EXTREMELY LOW GATE CHARGE
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS
s
HIGH-EFFICIENCY DC-DC CONVERTERS
s
UPS AND MOTOR CONTROL
Ordering Information
TYPE
V
DSS
R
DS(on)
I
D
STS5N150
150 V
<0.06
5 A
SALES TYPE
MARKING
PACKAGE
PACKAGING
STS5N150
S5N150
SO-8
TAPE & REEL
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
150
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
150
V
V
GS
Gate- source Voltage
20
V
I
D
Drain Current (continuous) at T
C
= 25C
5
A
I
D
Drain Current (continuous) at T
C
= 100C
3
A
I
DM
(
)
Drain Current (pulsed)
20
A
P
tot
Total Dissipation at T
C
= 25C
2.5
W
T
stg
Storage Temperature
-55 to 150
C
T
j
Operating Junction Temperature
STS5N150
2/6
THERMAL DATA
(*)
When Mounted on 1 inch
2
FR-4 board, 2 oz of Cu and t
[
10 sec.
ELECTRICAL CHARACTERISTICS (T
case
= 25 C unless otherwise specified)
OFF
ON
(*)
DYNAMIC
Rthj-amb
(*)
Thermal Resistance Junction-ambient
Max
50
C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
150
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20 V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 A
2
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 2.5 A
0.045
0.06
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs (*)
Forward Transconductance
V
DS
= 75 V
I
D
= 5 A
TBD
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
TBD
TBD
TBD
pF
pF
pF
3/6
STS5N150
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 75 V
I
D
= 2.5 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load, Figure 1)
TBD
TBD
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 120V I
D
= 5A V
GS
= 10V
(see test circuit, Figure 2)
TBD
TBD
TBD
28
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 75 V
I
D
= 2.5 A
R
G
= 4.7
,
V
GS
= 10 V
(Resistive Load, Figure 1)
TBD
TBD
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current (pulsed)
5
20
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 5 A
V
GS
= 0
1.2
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 5 A
di/dt = 100A/s
V
DD
= 50 V
T
j
= 150C
(see test circuit, Figure 3)
TBD
TBD
TBD
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
STS5N150
4/6
Fig. 2: Gate Charge test Circuit
Fig. 3: Test Circuit For Diode Recovery Behaviour
Fig. 1: Switching Times Test Circuits For Resistive
Load
5/6
STS5N150
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
1.75
0.068
a1
0.1
0.25
0.003
0.009
a2
1.65
0.064
a3
0.65
0.85
0.025
0.033
b
0.35
0.48
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.25
0.5
0.010
0.019
c1
45 (typ.)
D
4.8
5.0
0.188
0.196
E
5.8
6.2
0.228
0.244
e
1.27
0.050
e3
3.81
0.150
F
3.8
4.0
0.14
0.157
L
0.4
1.27
0.015
0.050
M
0.6
0.023
S
8 (max.)
0016023
SO-8 MECHANICAL DATA
STS5N150
6/6
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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