RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
.400 x .600 2L FL (M207)
hermetically sealed
.
REFRACTORY/GOLD METALL IZATION
.
EMITTER SITE BALLASTING
.
LOW RF THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
325 W MIN. WITH 7.7 dB GAIN
.
1030/1090 MHZ OPERATION
DESCRIPTION
The AM1011-300 is a rugged, Class C common
base device specifically designed for new Mode-
S interrogator and transponder applications.
Minimal amplitude droop over the heavy Mode-S
pulse burst is guarante ed by a thermal design in-
corporating an overlay site-ballasted die geome-
try.
PIN CONNECTION
BRANDING
AM1011-300
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Un it
P
DISS
Power Dissipation
(T
C
100
C)*
1070
W
I
C
Device Current*
36
A
V
CC
Collector-Supply Voltage*
43
V
T
J
Junction Temperature (Pulsed RF operation)
+250
C
T
STG
Storage Temperature
-
65 to +200
C
R
TH(j- c)
Junction-Case Thermal Resistance*
0.14
C/W
*
Applies only to rated RF amplifier operation.
AM1011-300
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
O RDER CODE
AM1011-300
December 9, 1997
1/5
ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symb ol
T est Co ndi ti ons
Val ue
Un it
Min.
Typ .
Max.
P
OUT
f
=
1090 MHz
P
IN
=
55 W
V
CC
=
40 V
325
350
--
W
hc
f
=
1090 MHz
P
OUT
=
325 W
V
CC
=
40 V
40
45
--
%
G
P
f
=
1090 MHz
P
OUT
=
325 W
V
CC
=
40 V
7.7
8.0
--
dB
Pulse Condi tions: Pul se wi dth = 200
s, D uty Cycle = 5%, are equivalent to the follow in g
pulse burst condi tions:
Mode-S Interr ogator (f req = 1030MHz)
32 puls es, 32
s on, 18
s off, burst period = 17. 6ms
long t erm duty = 5.82%
STATIC
Symb ol
Test Con ditio ns
Value
Uni t
Min.
T yp.
Max.
BV
CBO
I
C
=
75 mA
I
E
=
0 mA
65
--
--
V
BV
CES
I
C
=
75 mA
V
BE
=
0 V
65
--
--
V
BV
EBO
I
C
=
25 mA
I
C
=
0 mA
3.0
--
--
V
I
CES
V
CE
=
40 V
V
BE
=
0 V
--
--
30
mA
h
FE
V
CE
=
5 V
I
C
=
10 A
10
--
--
--
DYNAMIC
AM1011-300
2/5
December 9, 1997
TYPICAL PERFORMANCE
POWER OUTPUT vs POWER INPUT
@ 1030 MHz
POWER OUTPUT vs POWER INPUT
@ 1090 MHz
MAXIMUM THERMAL RESISTANCE vs
PULSE WIDTH
T
C
= 40
C
P
IN
= 50W
V
CC
= 40V
Duty Cycle = 5%
AM1011-300
December 9, 1997
3/5
FREQ.
Z
IN
(
)
Z
CL
(
)
1030 MHz
0.7 + j 4.1
0.78
-
j 2.4
1090 MHz
0.65 + j 4.2
0.4
-
j 2.4
P
IN
= 55W
Z
IN
TYPICAL INPUT
IMPEDANCE
Z
CL
TYPICAL
COLLECTOR LOAD
IMPEDANCE DATA
TEST CIRCUIT
AM1011-300
4/5
December 9, 1997
PACKAGE MECHANICAL DATA
Ref.: Dwg. No. 12-0207
UDCS No. 1011408 rev B
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously
supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
1997 SGS-TH OMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIE S
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea
Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland
Taiwan - Thailand - United Kingdom - U.S.A.
AM1011-300
December 9, 1997
5/5
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