RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS
. 310 x .310 2LF L (S064)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
5:1 VSWR CAPABILITY
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
5.5 W MIN. WITH 10 dB GAIN
DESCRIPTION
The AM81214-006 device is a high power Class
C transistor specifically designed for L-Band Ra-
dar pulsed driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles, and tempera-
tures and is capable of withstanding 5:1 output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire
bond ing techniques ensure high reliability and
product consistency.
AM81214-006 is supplied in the grounded IM-
PAC
TM
Hermetic Metal/Ceramic package with in-
ternal input/output matching structures.
PIN CONNECTION
BRANDI NG
81214-6
ORDER CODE
AM81214-6
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Unit
P
DISS
Power Dissipation*
(T
C
100
C)
16.7
W
I
C
Device Current*
0.82
A
V
CC
Collector-Supply Voltage*
32
V
T
J
Junction Temperature (Pulsed RF Operation)
250
C
T
STG
Storage Temperature
-
65 to +200
C
R
TH(j-c)
Junction-Case Thermal Resistance*
9.0
C/W
*Applies only to rated RF amplifier operation
AM81214-006
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
TEST CIRCUIT
All dimensions are in inches.
Substrate material: .025 thick AI
2
O
3
C1
:
0.2--2.5 pF Johanson Gigatrim Capacitor
C2
:
0.2--2.5 pF Johanson Gigatrim Capacitor
C3
:
1500 pF Filtercon Feedthrough
C4
:
0.1
F, Ceramic Capacitor
C5
:
100
F, Electrolytic Capacitor
C6
:
100 pF Chip Capacitor
L
:
No. 26 Wire, 4 Turn .062 I.D.
P
IN
=
0.5 W
V
CC
=
28 V
Normalized to 50 ohms
IMPEDANCE DATA
Z
IN
TYPICAL INPUT
IMPEDANCE
Z
CL
TYPICAL COLLECTOR
LOAD IMPEDANCE
FREQ.
Z
IN
(
)
Z
CL
(
)
L
=
1.2 GHz
10.5 + j 9.0
9.0 + j 3.0
M
=
1.3 GHz
9.5 + j 8.0
6.5 + j 2.0
AM81214-006
PACKAGE MECHANICAL DATA
Ref.: Dwg. No. 12-0221 rev. A
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectron-
ics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1995 SGS-TH OMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
AM81214-006
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