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Электронный компонент: AM81720-012

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September 1992
COMMUNICATIONS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .400 2LFL (S036)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
RUGGIZED VSWR
:1
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
12 W MIN. WITH 7.4 dB GAIN
DESCRIPTION
The AM81720-012 is designed specifically for Tele-
communications applications.
The device is capable of withstanding any mis-
match load condition at any phase angle (VSWR
:1) under full rated conditions. The unit is an
overlay, emitter site ballasted, geometry utilizing
a refractory/gold metallization system.
The unique AMPACTM devices are housed in Her-
metic Metal/Ceramic packages with internal
Input/Output matching structures.
PIN CONNECTION
BRANDING
81720-12
ORDER CODE
AM81720-012
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Unit
P
DISS
Power Dissipation*
31.8
W
I
C
Device Current*
1.47
A
V
CC
Collector-Supply Voltage*
24
V
T
J
Junction Temperature
200
C
T
STG
Storage Temperature
-
65 to +200
C
R
TH(j-c)
Junction-Case Thermal Resistance
5.5
C/W
*Applies only to rated RF amplifier operation
NOTE:
Thermal Resistance determined by Infra-Red Scanning of Hot-Spot
Junction Temperature at rated RF operating conditions.
AM81720-012
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/4
ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
P
OUT
f
=
1.7 -- 2.0GHz
P
IN
=
2.2W
V
CC
=
24V
12
--
--
W
c
f
=
1.7 -- 2.0GHz
P
IN
=
2.2W
V
CC
=
24V
40
--
--
%
G
P
f
=
1.7 -- 2.0GHz
P
IN
=
2.2W
V
CC
=
24V
7.4
--
--
dB
STATIC
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
BV
CBO
I
C
=
5mA
I
E
=
0mA
45
--
--
V
BV
EBO
I
E
=
5mA
I
C
=
0mA
3.0
--
--
V
I
CBO
V
CB
=
24V
--
--
1.25
mA
h
FE
V
CE
=
5V
I
C
=
1A
15
--
150
--
DYNAMIC
TYPICAL PERFORMANCE
POWER OUTPUT vs POWER INPUT
COLLECTOR EFFICIENCY vs
POWER INPUT
AM81720-012
2/4
PACKAGE MECHANICAL DATA
Ref.: Dwg.No. J125331
TEST CIRCUIT
AM81720-012
3/4
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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AM81720-012
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