August 23, 1996
S-BAND RADAR APPLICATIONS
RF & MICROWAVE TRANSISTORS
. 400 x .400 2NL FL (S042)
hermetically sealed
.
REFRACTORY/GOLD METALL IZATION
.
EMITTER SITE BALLASTED
.
5:1 VSWR CAPABILITY
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
5.0 W MIN. WITH 5.2 dB GAIN
DESCRIPTION
The AM83135-005 device is a medium power sili-
con bipolar NPN transistor specifically designed
for S-Band radar pulsed driver applications.
This device is capable of operation over a wide
range of pulse widths. duty cycles and tempera-
tures, and can withstand a 5:1 output VSWR.
Low RF thermal resistance, refractory/gold metal-
lization, and computerized automatic wire bond-
ing techniques ensure high reliability and product
consistency.
The AM83135-005 is supplied in the AMPAC
TM
Hermetic Metal/Ceramic package with internal In-
put/Output matching circuitry, and is intended for
military and other high reliability applications.
PIN CONNECTION
BRANDI NG
83135-5
O RDER CODE
AM83135-005
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Un it
P
DISS
P ower Dissipation*
(T
C
100
C)
40
W
I
C
Device Current*
1.8
A
V
CC
Collector-Supply Voltage*
34
V
T
J
J un ction Te mperature ( Pul sed RF Operation)
250
C
T
STG
S torage Temperature
-
65 to +200
C
R
TH(j- c)
J un ction-Ca s e Thermal R e sistance*
3.75
C/W
*Applie s only to rated RF a mplifier oper ation
AM83135-005
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/4
TEST CIRCUIT
All dimensions are in inches.
Substrate Material: .025 tick Al
2
0
3
(Er
=
9.6)
C1
:
100 pF Chip Capacitor
(Note: Mounted on its thin side)
C2
:
1500 pF RF Feedthru
C3
:
100 mF Electrolytic
L1
:
No. 32 Wire, 2 Turns 1/16" I.D.
L2
:
Printed Choke
TYPICAL INPUT
IMPEDANCE
TYPICAL COLLECTOR
LOAD IMPEDANCE
P
IN
=
1.5 W
V
CC
=
30 V
Normalized to 50 ohms
L
L
H
H
Z
CL
Z
IN
IMPEDANCE DATA
Z
IN
Z
CL
FREQ.
Z
IN
(
)
Z
CL
(
)
L
=
2.7 GHz
9.0 j 22.0
48.0 + j 11.5
=
2.9 GHz
9.0 j 23.0
43.0 + j 9.0
M
=
3.1 GHz
12.5 + j 25.0
30.0 + j 3.0
=
3.3 GHz
20.0 + j 25.0
21.5 + 0.0
H
=
3.5 GHz
22.0 + j 22.5
16.0
-
j 3.0
AM83135-005
3/4
PACKAGE MECHANICAL DATA
Ref.: Dwg. No. 12-0213 rev. A
UDCS Doc. No. 1011416
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously
supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
1996 SGS-TH OMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIE S
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia -
AM83135-005
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