November 27, 1996
S-BAND RADAR APPLICATIONS
RF & MICROWAVE TRANSISTORS
. 310 x .310 2LF L (S064)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
RUGGEDIZED VSWR 3:1 @ 1dB
OVERDRIVE
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
50 W MIN. WITH 5.2 dB GAIN
DESCRIPTION
The AM83135-050 device is a high power silicon
bipolar NPN transistor specifically designed for S-
Band radar pulsed output and driver applications.
This device is characterized at 10
sec pulsewidth
and 10% duty cycle, but is capable of operation
over a range of pulse widths, duty cycles and tem-
peratures and can withstand a 3:1 output VSWR
with a +1 dB input overdrive. Low RF thermal re-
sistance, refractory/gold metallization, and com-
puterized automatic wire bonding techniques en-
sure high reliability and product consistency (in-
cluding phase characteristics).
The AM83135-050 is supplied in the IMPAC
TM
Her-
metic Meta l/Ceramic package with internal In-
put/Output impedance matching circuitry, and is
intended for military and other high reliability ap-
plications.
PIN CONNECTION
BRANDING
83135-50
O RDER CODE
AM83135-050
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
R
TH(j- c)
Junction-Case Thermal Resistance*
0.40
C/W
*Applies only to rated RF amplifier operation
AM83135-050
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
Symbol
Parameter
Value
Un it
P
DISS
Power Dissipation*
(T
C
125
C)
312
W
I
C
Device Current*
8.0
A
V
CC
Collector-Supply Voltage*
48
V
T
J
Junction Temperature (Pulsed RF Operation)
250
C
T
STG
Storage Temperature
-
65 to +200
C
1/6
All dimensions are in mils.
Substrate material: 25 mil thick Al
2
O
3
(E
r
= 9.6)
C - 0.3 to 1.2 pF Johanson Gigatrim
L - 1 Turn #26 wire .80 I.D.
TEST CIRCUIT
AM83135-050
5/6
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