BDY90
HIGH CURRENT NPN SILICON TRANSISTOR
s
SGS-THOMSON PREFERRED SALESTYPE
APPLICATIONS
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDY90 is a silicon epitaxial planar NPN
power transistors in Jedec TO-3 metal case. They
are intented for use in switching and linear
applications in military and industrial equipment.
INTERNAL SCHEMATIC DIAGRAM
June 1997
ABSOLUTE MAXIMUM RATINGS
Value
V
CBO
Collector-base Voltage (I
E
= 0)
120
V
V
CEV
Collector-emitter Voltage (V
BE
= -1.5V)
120
V
V
CEO
Collector-emitter Voltage (I
B
= 0)
100
V
V
EBO
Emitter-base Voltage (I
C
= 0)
6
V
I
C
Collector Current
10
A
I
CM
Collector Peak Current (repetitive)
15
A
I
B
Base Current
2
A
P
tot
Total Dissipation at T
c
25
o
C
60
W
T
stg
Storage Temperature
-65 to 175
o
C
T
j
Max. Operating Junction Temperature
175
o
C
1
2
TO-3
1/4
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
2.5
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CE
= V
CBO
1
mA
I
CEV
Collector Cut-off
Current (V
BE
= -1.5V)
V
CE
= V
CEV
T
case
= 150
o
C
V
CE
= V
CEV
1
3
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 6 V
1
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 100 mA
100
V
V
CE(sat)
Collector-emitter
Saturation Voltage
I
C
= 5 A I
B
= 0.5 A
I
C
= 10 A I
B
= 1 A
0.5
1.5
V
V
V
BE(sat)
Base-emitter
Saturation Voltage
I
C
= 5 A I
B
= 0.5 A
I
C
= 10 A I
B
= 1 A
1.2
1.5
V
V
h
FE
DC Current Gain
I
C
= 1 A V
CE
= 2 V
I
C
= 5 A V
CE
= 5 V
I
C
= 10 A V
CE
= 5 V
30
30
20
120
f
t
Transition-Frequency
I
C
= 0.5 A V
CE
= 5 V
f = 5 MHz
70
MHz
t
on
Turn-on Time
I
C
= 5 A I
B1
= 0.5 A
V
CC
= 30 V
0.35
s
t
s
Storage Time
I
C
= 5 A I
B1
= -I
B2
= 0.5 A
V
CC
= 30 V
1.3
s
t
f
Fall Time
0.2
s
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
BDY90
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
11.00
13.10
0.433
0.516
B
0.97
1.15
0.038
0.045
C
1.50
1.65
0.059
0.065
D
8.32
8.92
0.327
0.351
E
19.00
20.00
0.748
0.787
G
10.70
11.10
0.421
0.437
N
16.50
17.20
0.649
0.677
P
25.00
26.00
0.984
1.023
R
4.00
4.09
0.157
0.161
U
38.50
39.30
1.515
1.547
V
30.00
30.30
1.187
1.193
E
B
R
C
D
A
P
G
N
V
U
O
P003F
TO-3 MECHANICAL DATA
BDY90
3/4
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
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. . .
BDY90
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