BF257
BF258-BF259
October 1988
HIGH VOLTAGE VIDEO AMPLIFIERS
DESCRIPTION
The BF257, BF258 and BF259 are silicon planar
epitaxial NPN transistors in Jedec TO-39 metal
case. They are particularly designed for videooutput
stages in CTV and MTV sets, class A audio output
stages and drivers for horizontal deflection circuits.
ABSOLUTE MAXIMUM RATINGS
Val ue
Symbol
Parameter
BF 257
BF258
BF25 9
Unit
V
CBO
Collector-base Voltage (I
E
= 0)
160
250
300
V
V
CEO
Collector-emitter Voltage (I
B
= 0)
160
250
300
V
V
E BO
Emitter-base Voltage (I
C
= 0)
5
V
I
C
Collector Current
100
mA
I
CM
Collector Peak Current
200
mA
P
t o t
Total Power Dissipation at T
amb
50
C
5
W
T
s t g
Storage Temperature
55 to 200
C
T
j
Junction Temperature
200
C
INTERNAL SCHEMATIC DIAGRAM
TO-39
1/5
ELECTRICAL CHARACTERISTICS (T
amb
= 25
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CB O
Collector Cutoff Current
(I
E
= 0)
for BF257
for BF258
for BF259
V
CB
= 100 V
V
CB
= 200 V
V
CB
= 250 V
50
50
50
nA
nA
nA
V
(BR) CB O
Collector-base
Breakdown Voltage
(I
E
= 0)
I
C
= 100
A
for BF257
for BF258
for BF259
160
250
300
V
V
V
V
( BR) CEO
*
Collector-emitter
Breakdown Voltage
(I
B
= 0)
I
C
= 10 mA
for BF257
for BF258
for BF259
160
250
300
V
V
V
V
(BR) EB O
Emittter-base
Breakdown Voltage
(I
C
= 0)
I
E
= 100
A
5
V
V
CE (s at )
*
Collector-emitter
Saturation Voltage
I
C
= 30 mA
I
B
= 6 mA
1
V
h
FE
*
DC Current Gain
I
C
= 30 mA
V
CE
= 10 V
25
f
T
Transition Frequency
I
C
= 15 mA
V
CE
= 10 V
90
MHz
C
r e
Reverse Capacitance
I
C
= 0
f = 1 MHz
V
CE
= 30 V
3
pF
*
Pulsed : pulse duration = 300
s, duty cycle = 1 %.
DC Current Gain.
THERMAL DATA
R
t h j- cas e
R
t h j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
30
175
C/W
C/W
BF257-BF258-BF259
2/5
Collector Cutoff Current.
Collector-base Capacitance.
Transition Frequency.
Power Rating Chart.
Safe Operating Area.
BF257-BF258-BF259
3/5
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
12.7
0.500
B
0.49
0.019
D
6.6
0.260
E
8.5
0.334
F
9.4
0.370
G
5.08
0.200
H
1.2
0.047
I
0.9
0.035
L
45
o
(typ.)
L
G
I
D
A
F
E
B
H
TO39 MECHANICAL DATA
P008B
BF257-BF258-BF259
4/5
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
BF257-BF258-BF259
5/5
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