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BTA20 BW/CW
BTB20 BW/CW
September 2001 - Ed: 1A
SNUBBERLESS TRIACS
s
High commutation: (dI/dt)c > 18A/ms
without snubber
s
High surge current: I
TSM
= 200A
s
V
DRM
up to 800V
s
BTA Family:
Insulating voltage = 2500V
(RMS)
(UL recognized: E81734)
FEATURES
The BTA/BTB20 BW/CW triac family are high per-
formance glass passivated chips technology.
The SNUBBERLESS
TM
concept offer suppression
of RC network and it is suitable for application such
as phase control and static switching on inductive
or resistive load.
DESCRIPTION
A1
A2
G
TO-220AB
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current (360 conduction angle)
BTA
Tc = 70C
20
A
BTB
Tc = 90C
I
TSM
Non repetitive surge peak on-state current
(Tj initial = 25C)
tp = 8.3ms
210
A
tp = 10ms
200
I
2
t
I
2
t value
tp = 10ms
200
A
2
s
dI/dt
Critical rate of rise of on-state current
Gate supply: I
G
= 500mA
dI
G
/dt = 1A/s
Repetitive
F = 50Hz
20
A/s
Non repetitive
100
Tstg
Tj
Storage and operating junction temperature range
-40 to +150
-40 to +125
C
Tl
Maximum lead soldering temperature during 10s at 4.5mm from case
260
C
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
BTA/BTB20-...BW/CW
Unit
600
700
V
DRM
V
RRM
Repetitive peak off-state voltage Tj = 125C
600
700
V
A1
A2
G
BTA20 BW/CW BTB20 BW/CW
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Symbol
Parameter
Value
Unit
Rth (j-a)
Junction to ambient
60
C/W
Rth (j-c) DC
Junction to case for DC
BTA
2.8
C/W
BTB
1.7
Rth (j-c) AC
Junction to case for 360 conduction angle (F = 50Hz)
BTA
2.1
C/W
BTB
1.3
GATE CHARACTERISTICS (maximum values)
P
G(AV)
= 1W
P
GM
= 10W (tp = 20s)
I
GM
= 4A (tp = 20s)
V
GM
= 16V (tp = 20s)
THERMAL RESISTANCE
Symbol
Test conditions
Quadrant
BTA / BTB20
Unit
BW
CW
I
GT
V
D
= 12V (DC)
R
L
= 33
Tj = 25C
I - II - III
MIN.
2
1
mA
MAX.
50
35
V
GT
V
D
= 12V (DC)
R
L
= 33
Tj = 25C
I - II - III
MAX.
1.5
V
V
GD
V
D
= V
DRM
R
L
= 3.3k
Tj =125C
I - II - III
MIN.
0.2
V
tgt
V
D
= V
DRM
I
G
= 500mA
dI
G
/dt = 3A/s
Tj = 25C
I - II - III
TYP.
2
s
I
L
I
G
= 1.2I
GT
Tj = 25C
I - III
TYP.
50
-
mA
II
90
-
I - II - III
MAX.
-
80
I
H
*
I
T
= 500mA Gate open
Tj = 25C
MAX.
75
50
mA
V
TM
*
I
TM
= 28A
tp = 380s
Tj = 25C
MAX.
1.70
V
I
DRM
I
RRM
V
DRM
rated
V
RRM
rated
Tj = 25C
MAX.
0.01
mA
Tj = 125C
MAX.
3
dV/dt *
Linear slope up to
V
D
= 67% V
DRM
gate open
Tj = 125C
TYP.
750
500
V/
s
MIN.
500
250
(dI/dt)c*
Without snubber
Tj = 125C
TYP.
36
22
A/ms
MIN.
18
11
* For either polarity of electrode A
2
voltage with reference to electrode A
1
ELECTRICAL CHARACTERISTICS
BTA20 BW/CW BTB20 BW/CW
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Package
I
T(RMS)
V
DRM
/ V
RRM
Sensitivity Specification
A
V
BW
CW
BTA
(Insulated)
20
600
X
X
700
X
X
BTB
(Uninsulated)
600
X
PRODUCT INFORMATION
BT A 20 - 600 BW
Triac
Series
Insulation:
A: insulated
B: non insulated
Current: 20A
Voltage:
600: 600V
700: 700V
Sensitivity
ORDERING INFORMATION
BTA20 BW/CW BTB20 BW/CW
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Fig. 3: Correlation between maximum RMS power
dissipation and maximum allowable temperatures
(Tamb and Tcase) for different thermal resistances
heatsink + contact (BTB).
Fig. 4: RMS on-state current versus case temper-
ature.
1E-3
1E-2
1E-1
1E+0
1E+1
1E +2 5E+2
0.01
0.1
1
Zth/Rth
Zth(j-c)
Zth(j-a)
tp(s)
Fig. 5: Relative variation of thermal impedance
versus pulse duration.
Fig. 6: Relative variation of gate trigger current
and holding current versus junction temperature.
Fig. 1: Maximum RMS power dissipation versus
RMS on-state current (F = 50Hz).(Curves are cut
off by (dI/dt)c limitation)
Fig. 2: Correlation between maximum RMS power
dissipation and maximum allowable temperatures
(Tamb and Tcase) for different thermal resistances
heatsink + contact (BTA).
BTA20 BW/CW BTB20 BW/CW
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Fig. 9: On-state characteristics (maximum values).
Fig. 7: Non repetitive surge peak on-state current
versus number of cycles.
Fig. 8: Non repetitive surge peak on-state current
for a sinusoidal pulse with width: t
10ms, and cor-
responding value of I
2
t.
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