BUF420AW
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
STMicroelectronics PREFERRED
SALESTYPE
s
HIGH VOLTAGE CAPABILITY
s
VERY HIGH SWITCHING SPEED
s
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s
LOW BASE-DRIVE REQUIREMENTS
APPLICATIONS:
s
SWITCH MODE POWER SUPPLIES
s
MOTOR CONTROL
DESCRIPTION
The BUF420AW is manufactured using High
Voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capacity. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
The BUF series is designed for use in
high-frequency power supplies and motor control
applications.
INTERNAL SCHEMATIC DIAGRAM
March 2002
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CEV
Collector-Emitter Voltage (V
BE
= -1.5V)
1000
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
450
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
7
V
I
C
Collector Current
30
A
I
CM
Collector Peak Current (t
p
< 5 ms)
60
A
I
B
Base Current
6
A
I
BM
Base Peak Current (t
p
< 5 ms)
9
A
P
tot
Total Dissipation at T
c
= 25
o
C
200
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
1
2
3
TO-247
1/8
THERMAL DATA
R
thj-case
Thermal Resistance Junction-Case Max
0.63
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CER
Collector Cut-off
Current (R
BE
= 5
)
V
CE
= 1000 V
V
CE
= 1000 V T
C
= 100
o
C
0.2
1
mA
mA
I
CEV
Collector Cut-off
Current (V
BE
= -1.5V)
V
CE
= 1000 V
V
CE
= 1000 V T
C
= 100
o
C
0.2
1
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
1
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 200 mA L = 25 mH
450
V
V
EBO
Emitter Base Voltage
(I
C
= 0)
I
E
= 50 mA
7
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 10A I
B
= 1 A
I
C
= 10 A I
B
= 1 A T
C
=100
o
C
I
C
= 20 A I
B
= 4 A
I
C
= 20 A I
B
= 4 A T
C
=100
o
C
0.8
0.5
2.8
2
V
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 10A I
B
= 1 A
I
C
= 10 A I
B
= 1 A T
C
=100
o
C
I
C
= 20 A I
B
= 4 A
I
C
= 20 A I
B
= 4 A T
C
=100
o
C
0.9
1.1
1.5
1.5
V
V
V
V
di
c
/dt
Rate of rise on-state
Collector Current
V
CC
= 300 V R
C
= 0 t
p
= 3
s
I
B1
= 1.5 A T
C
=25
o
C
I
B1
= 1.5 A T
C
=100
o
C
I
B1
= 6 A T
C
=100
o
C
70
150
100
A
/
s
A
/
s
A
/
s
V
CE
(3
s)
Collector-Emitter
Dynamic Voltage
V
CC
= 300 V R
C
= 60
I
B1
= 1.5 A T
C
=25
o
C
I
B1
= 1.5 A T
C
=100
o
C
2.1
8
V
V
V
CE
(5
s)
Collector-Emitter
Dynamic Voltage
V
CC
= 300 V R
C
= 60
I
B1
= 1.5 A T
C
=25
o
C
I
B1
= 1.5 A T
C
=100
o
C
1.1
4
V
V
t
s
t
f
t
c
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
I
C
= 10 A V
CC
= 50 V
V
BB
= - 5 V R
BB
= 0.6
V
clamp
= 400 V I
B1
= 1 A
L = 0.25 mH
1
0.05
0.08
s
s
s
t
s
t
f
t
c
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
I
C
= 10 A V
CC
= 50 V
V
BB
= - 5 V R
BB
= 0.6
V
clamp
= 400 V I
B1
= 1 A
L = 0.25 mH T
C
=100
o
C
2
0.1
0.18
s
s
s
V
CEW
Maximum Collector
Emitter Voltage
without Snubber
I
C
= 10 A V
CC
= 50 V
V
BB
= - 5 V R
BB
= 0.6
I
B1
= 1 A L = 0.25 mH
T
C
=125
o
C
500
V
t
s
t
f
t
c
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
I
C
= 10 A V
CC
= 50 V
V
BB
= 0 R
BB
= 0.15
V
clamp
= 400 V I
B1
= 1 A
L = 0.25 mH
1.5
0.04
0.07
s
s
s
BUF420AW
2/8
ELECTRICAL CHARACTERISTICS (continued)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
s
t
f
t
c
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
I
C
= 10 A V
CC
= 50 V
V
BB
= 0 R
BB
= 0.15
V
clamp
= 400 V I
B1
= 1 A
L = 0.25 mH T
C
=100
o
C
3
0.15
0.25
s
s
s
V
CEW
Maximum Collector
Emitter Voltage
without Snubber
I
C
= 10 A V
CC
= 50 V
V
BB
= 0 R
BB
= 0.15
I
B1
= 1 A L = 0.25 mH
T
C
=125
o
C
500
V
t
s
t
f
t
c
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
I
C
= 20 A V
CC
= 50 V
V
BB
= -5 V R
BB
=0.6
V
clamp
= 400 V I
B1
= 4 A
L = 0.12 mH
2.2
0.06
0.12
s
s
s
t
s
t
f
t
c
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
I
C
= 20 A V
CC
= 50 V
V
BB
= - 5 V R
BB
= 0.6
V
clamp
= 400 V I
B1
= 4 A
L = 0.12 mH T
C
=125
o
C
3.5
0.12
0.3
s
s
s
V
CEW
Maximum Collector
Emitter Voltage
without Snubber
I
CWoff
= 30 A V
CC
= 50 V
V
BB
= - 5 V R
BB
= 0.6
L = 0.12 mH I
B1
= 6 A
T
C
=125
o
C
400
V
BUF420AW
3/8
DC Current Gain
Collector Emitter Saturation Voltage
Forward Biased Safe Operating Area
DC Current Gain
Base Emitter Saturation Voltage
Reverse Biased Safe Operating Area
BUF420AW
4/8
Storage Time Versus Pulse Time.
Figure 1: Inductive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
BUF420AW
5/8
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