BUH515D
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
STMicroelectronics PREFERRED
SALESTYPE
s
HIGH VOLTAGE CAPABILITY
s
U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734 (N))
s
NPN TRANSISTOR WITH INTEGRATED
FREEWHEELING DIODE
APPLICATIONS:
s
HORIZONTAL DEFLECTION FOR COLOUR
TV
DESCRIPTION
The
BUH515D
is
manufactured
using
Multiepitaxial Mesa technology for cost-effective
high performance and uses a Hollow Emitter
structure to enhance switching speeds.
The BUH series is designed for use in horizontal
deflection circuits in televisions and monitors.
INTERNAL SCHEMATIC DIAGRAM
November 1999
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Uni t
V
CBO
Collector-Base Voltage (I
E
= 0)
1500
V
V
CEO
Collector-Emit ter Volt age (I
B
= 0)
700
V
V
EBO
Emitt er-Base Voltage (I
C
= 0)
5
V
I
C
Collector Current
8
A
I
CM
Collector Peak Current (t
p
< 5 ms)
15
A
I
B
Base Current
5
A
I
BM
Base Peak Current (t
p
< 5 ms)
8
A
P
t ot
Tot al Dissipation at T
c
= 25
o
C
50
W
T
stg
St orage Temperature
-65 to 150
o
C
T
j
Max. Operat ing Junction Temperat ure
150
o
C
1
2
3
ISOWATT218
R Typ. = 12
1/7
THERMAL DATA
R
t hj-ca se
Thermal Resistance Junction-case
Max
2.5
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
CES
Collector Cut -of f
Current (V
BE
= 0)
V
CE
= 1300 V
V
CE
= 1500 V
V
CE
= 1500 V
T
j
= 125
o
C
10
0.2
2
A
mA
mA
I
EBO
Emitt er Cut -of f Current
(I
C
= 0)
V
EB
= 5 V
200
mA
V
CE(sat )
Collector-Emit ter
Saturation Voltage
I
C
= 5 A
I
B
= 1.25 A
1.5
V
V
BE(s at)
Base-Emitt er
Saturation Voltage
I
C
= 5 A
I
B
= 1.25 A
1.3
V
h
F E
DC Current Gain
I
C
= 5 A
V
CE
= 5 V
I
C
= 5 A
V
CE
= 5 V
T
j
= 100
o
C
5
3
10
t
s
t
f
RESI STIVE LO AD
St orage Time
Fall Time
V
CC
= 400 V
I
C
= 5 A
I
B1
= 1.5 A
I
B2
= -2.5 A
2.4
170
3.6
260
s
ns
t
s
t
f
INDUCTIVE LO AD
St orage Time
Fall Time
I
C
= 5 A
f = 15625 Hz
I
B1
= 1.25 A
I
B2
= -2.5 A
V
c eflybac k
= 1050 sin
10
10
6
t
V
3.5
450
s
ns
V
F
Diode F orward Voltage
I
F
= 5 A
2
V
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
Safe Operating Area
Thermal Impedance
BUH515D
2/7
Derating Curve
Collector Emitter Saturation Voltage
Power Losses at 16 KHz
DC Current Gain
Base Emitter Saturation Voltage
Switching Time Inductive Load at 16KHz
(see figure 2)
BUH515D
3/7
Switching Time Resistive Load
In order to saturate the power switch and reduce
conduction losses, adequate direct base current
I
B1
has to be provided for the lowest gain h
FE
at
100
o
C (line scan phase). On the other hand,
negative base current I
B2
must be provided to
turn off the power transistor (retrace phase). Most
of the dissipation, especially in the deflection
application, occurs at switch-off. Therefore it is
essential to determine the value of I
B2
which
minimizes
power
losses,
fall
time
t
f
and,
consequently, T
j
. A new set of curves have been
defined to give total power losses, t
s
and t
f
as a
function of I
B2
at 16 KHz
frequencies for
choosing the optimum negative drive. The test
circuit is illustrated in fig. 1.
Inductance L
1
serves to control the slope of the
negative base current I
B2
to recombine the
excess carrier in the collector when base current
is still present, this avoid any tailing phenomenon
in the collector current.
The values of L and C are calculated from the
following equations:
1
2
L
(
I
C
)
2
=
1
2
C
(
V
CEfly
)
2
=
2
f
=
1
L
C
Where I
C
= operating collector current, V
CEfly
=
flyback voltage, f= frequency of oscillation during
retrace.
BASE DRIVE INFORMATION
BUH515D
4/7
Figure 1: Inductive Load Switching Test Circuit
Figure 2: Switching Waveforms in a Deflection Circuit
BUH515D
5/7
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
5.35
5.65
0.211
0.222
C
3.30
3.80
0.130
0.150
D
2.90
3.10
0.114
0.122
D1
1.88
2.08
0.074
0.082
E
0.75
0.95
0.030
0.037
F
1.05
1.25
0.041
0.049
F2
1.50
1.70
0.059
0.067
F3
1.90
2.10
0.075
0.083
G
10.80
11.20
0.425
0.441
H
15.80
16.20
0.622
0.638
L
9
0.354
L1
20.80
21.20
0.819
0.835
L2
19.10
19.90
0.752
0.783
L3
22.80
23.60
0.898
0.929
L4
40.50
42.50
1.594
1.673
L5
4.85
5.25
0.191
0.207
L6
20.25
20.75
0.797
0.817
N
2.1
2.3
0.083
0.091
R
4.6
0.181
DIA
3.5
3.7
0.138
0.146
P025C/A
ISOWATT218 MECHANICAL DATA
- Weight : 4.9 g (typ.)
- Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm
- The side of the dissipator must be flat within 80
m
BUH515D
6/7
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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1999 STMicroelectronics Printed in Italy All Rights Reserved
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BUH515D
7/7
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