December 2005
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10
BUL3P5
MEDIUM VOLTAGE FAST-SWITCHING
PNP POWER TRANSISTOR
Features
MEDIUM VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
Applications
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
Description
The BUL3P5 is manufactured using high voltage
Multi-Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is expressly designed for a new
solution to be used in compact fluorescent lamps,
H.F. ballast voltage FED where it is coupled with
the BUL3N7, its complementary NPN transistor.
Order Codes
Internal Schematic Diagram
1
2
3
TO-220
Part Number
Marking
Package
Packing
BUL3P5
BUL3P5
TO-220
TUBE
www.st.com
rev.2
1 Absolute Maximum Ratings
BUL3P5
2/10
1 Absolute
Maximum
Ratings
Table 1.
Absolute Maximum Rating
Table 2.
Thermal Data
Symbol
Parameter
Value
Unit
V
CES
Collector-Emitter Voltage (V
BE
= 0)
-500
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
-400
V
V
EBO
Emitter-Base Voltage
(I
C
= 0, I
B
= -0.75 A, t
p
< 100ms, T
j
< 150C)
V
(BR)EBO
V
I
C
Collector Current
-3
A
I
CM
Collector Peak Current (t
P
< 5ms)
-6
A
I
B
Base Current
-1.5
A
I
BM
Base Peak Current (t
P
< 5ms)
-3
A
P
TOT
Total dissipation at T
c
= 25C
60
W
T
stg
Storage Temperature
-65 to 150
C
T
J
Max. Operating Junction Temperature
150
C
Symbol
Parameter
Value
Unit
R
thJ-case
R
thJ-amb
Thermal Resistance Junction-Case
_______________
Max
Thermal Resistance Junction-Ambient
______ ______
Max
2.08
62.5
C/W
C/W
BUL3P5
2 Electrical Characteristics
3/10
2 Electrical
Characteristics
Table 3.
Electrical Characteristics (T
CASE
= 25C; unless otherwise specified)
Note: 1 Pulsed duration = 300
s, duty cycle
1.5%.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off Current
(V
BE
= 0)
V
CE
= -500 V
V
CE
= -500 V
__ __
T
C
= 125C
-0.1
-0.5
mA
mA
V
(BR)EBO
Emitter-Base Breakdown Voltage
(I
C
= 0)
I
E
= -10 mA
-5
-10
V
V
CEO(sus)
Note: 1
Collector-Emitter
Sustaining Voltage (I
B
= 0)
I
C
= 100 mA
-400
V
V
CE(sat)
Note: 1
Collector-Emitter Saturation
Voltage
I
C
= -0.7 A
__ _
I
B
= -0.1A
I
C
= -1 A
__ _
I
B
= -0.2 A
-0.5
-0.5
V
V
V
BE(sat)
Note: 1
Base-Emitter Saturation Voltage
I
C
= -0.5A
____
I
B
= -0.1 A
I
C
= -1A
_____
I
B
= -0.2 A
I
C
= -2A
_____
I
B
= -0.4 A
-1.1
-1.2
-1.3
V
V
V
h
FE
DC Current Gain
I
C
= -10 mA
__
V
CE
= -5 V
I
C
= -0.7A
_ __
V
CE
= -5 V
I
C
= -2A
_
V
CE
= -5 V
10
18
4
34
t
r
t
s
t
f
RESISTIVE LOAD
Rise Time
Storage Time
Fall Time
I
C
= -0.7 A
___
V
CC
= -250 V
I
B1
= -0.14 A
__
I
B2
= 0.14 A
T
p
= 30
s
100
2.4
80
ns
s
ns
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
I
C
= -1 A
____
I
B1
= -0.2 A
V
BE(off)
= 5 V R
bb
= 0
L = 1 mH V
clamp
= 200 V
450
70
ns
ns
2 Electrical Characteristics
BUL3P5
4/10
2.1 Typical
Characteristics
Figure 1.
Safe Operating Area
Figure 2.
DC Current Gain
Figure 3.
DC Current Gain
Figure 4.
Collector Emitter Saturation Voltage
Figure 5.
Base Emitter Saturation Voltage
Figure 6.
Switching Times Resistive Load
BUL3P5
2 Electrical Characteristics
5/10
Figure 7.
Switching Times Inductive Load
Figure 8.
Reverse Bised SOA
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