BUL58D
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
SGS-THOMSON PREFERRED SALESTYPE
s
NPN TRANSISTOR
s
HIGH VOLTAGE CAPABILITY
s
LOW SPREAD OF DYNAMIC PARAMETERS
s
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s
LOW BASE-DRIVE REQUIREMENTS
s
VERY HIGH SWITCHING SPEED
s
FULLY CHARACTERISED AT 125
o
C
s
HIGH RUGGEDNESS
s
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
s
ELECTRONIC TRANSFORMERS FOR
HALOGEN LAMPS
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
s
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The BUL58D is manufactured using high voltage
Multi Epitaxial Planar technology to enhance
switching speeds while maintaining a
wide
RBSOA.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
INTERNAL SCHEMATIC DIAGRAM
September 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Uni t
V
CES
Collect or-Emitt er Voltage (V
BE
= 0)
800
V
V
CEO
Collect or-Emitt er Voltage (I
B
= 0)
450
V
V
EBO
Emitt er-Base Voltage (I
C
= 0)
9
V
I
C
Collect or Current
8
A
I
CM
Collect or Peak Current (t
p
< 5 ms)
16
A
I
B
Base Current
4
A
I
BM
Base Peak Current (t
p
< 5 ms)
8
A
P
t ot
Total Dissipation at T
c
= 25
o
C
85
W
T
stg
St orage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
1
2
3
TO-220
1/6
THERMAL DATA
R
t hj-ca se
R
t hj- amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient
Max
1.47
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
CES
Collect or Cut-off
Current (V
BE
= 0)
V
CE
= 800 V
V
CEO
= 800 V
T
j
= 125
o
C
200
500
A
A
I
CEO
Collect or Cut-off
Current (I
B
= 0)
V
CE
= 450 V
200
A
V
CEO (sus)
Collect or-Emitter
Sustaining Voltage
I
C
= 100 mA
L = 25 mH
450
V
V
EBO
Emitt er-Base Voltage
(I
C
= 0)
I
E
= 10 mA
9
V
V
CE(sat )
Collect or-Emitter
Saturat ion Voltage
I
C
= 4 A
I
B
= 0.8 A
I
C
= 5 A
I
B
= 1 A
1.5
2
V
V
V
BE(s at)
Base-Emitt er
Saturat ion Voltage
I
C
= 4 A
I
B
= 0.8 A
I
C
= 5 A
I
B
= 1 A
1.3
1.5
V
V
h
FE
DC Current G ain
I
C
= 5 A
V
CE
= 5 V
I
C
= 500 mA
V
CE
= 5 V
5
38
t
s
t
f
INDUCTIVE LOAD
St orage Time
Fall T ime
I
C
= 2 A
I
B1
= 0.4 A
V
BE(of f)
= -5 V
R
BB
= 0
V
CL
= 250 V
L = 200
H
1
90
1.8
180
s
ns
t
s
t
f
INDUCTIVE LOAD
St orage Time
Fall T ime
I
C
= 2 A
I
B1
= 0.4 A
V
BE(of f)
= -5 V
R
BB
= 0
V
CL
= 250 V
L = 200
H
T
j
= 125
o
C
1.5
180
s
ns
V
f
Diode Forward Volt age
I
C
= 3 A
3
V
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
Safe Operating Areas
Derating Curve
BUL58D
2/6
DC Current Gain
Collector Emitter Saturation Voltage
Inductive Fall Time
DC Current Gain
Base Emitter Saturation Voltage
Inductive Storage Time
BUL58D
3/6
(1) Fast electronic switch
(2) Non-inductive Resistor
(3) Fast recovery rectifier
Reverse Biased SOA
RBSOA and Inductive Load Switching Test
Circuit
BUL58D
4/6
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
P011C
TO-220 MECHANICAL DATA
BUL58D
5/6
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
BUL58D
6/6
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