BUT100
HIGH POWER NPN SILICON TRANSISTOR
s
SGS-THOMSON PREFERRED SALESTYPE
s
NPN TRANSISTOR
s
HIGH CURRENT CAPABILITY
s
FAST SWITCHING SPEED
s
HIGH RUGGEDNESS
APPLICATION
s
MOTOR CONTROL
s
UNINTERRUPTABLE POWER SUPPLY
DESCRIPTION
The BUT100 is a Multiepitaxial Planar NPN
Transistor in TO-3 package. It is intended for use
in high frequency and efficency converters,
switching regulators and motor control.
INTERNAL SCHEMATIC DIAGRAM
April 1997
1
2
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CEV
Collector-Emitter Voltage (V
BE
= -1.5V)
200
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
125
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
7
V
I
E
Emitter Current
50
A
I
EM
Emitter Peak Current
150
A
I
B
Base Current
10
A
I
BM
Base Peak Current
30
A
P
tot
Total Dissipation at T
c
< 25
o
C
300
W
T
stg
Storage Temperature
-65 to 200
o
C
T
j
Max. Operating Junction Temperature
200
o
C
TO-3
(version " S ")
1/4
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
0.58
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CER
Collector Cut-off
Current (R
BE
= 5
)
V
CE
= V
CEV
V
CE
= V
CEV
T
C
= 100
o
C
1
5
mA
mA
I
CEV
Collector Cut-off
Current
V
CE
= V
CEV
V
BE
= -1.5V
V
CE
= V
CEV
V
BE
= -1.5V TC = 100
o
C
1
4
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
1
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
I
C
= 0.2 A
L = 25mH
125
V
V
EBO
Emitter-Base Voltage
(I
C
= 0)
I
E
= 50mA
7
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 50A I
B
= 2.5A
I
C
= 100A I
B
= 10A
I
C
= 50A I
B
= 2.5A T
j
= 100
o
C
I
C
= 100A I
B
= 10A T
j
= 100
o
C
0.9
0.9
1.2
1.5
V
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 50A I
B
= 2.5A
I
C
= 100A I
B
= 10A
I
C
= 50A I
B
= 2.5A T
j
= 100
o
C
I
C
= 100A I
B
= 10A T
j
= 100
o
C
1.4
2
1.4
2.1
V
V
V
V
di
c
/dt
Rate of Rise of
on-state Collector
Current
V
CC
= 100V R
C
= 0 I
B1
= 5A
T
p
= 3
s T
j
= 100
o
C
180
A/
s
t
s
t
f
t
c
INDUCTIVE LOAD
Storage time
Fall Time
Crossover Time
V
CC
= 90V V
clamp
= 125 V
I
C
= 50A I
B1
= 2.5A
V
BB
= - 5V L
C
= 80
H
R
B2
= 1
T
j
= 100
o
C
2
0.2
0.35
s
s
s
V
CEW
Maximum Collector
Emitter Voltage
without Snubber
V
CC
= 90V I
CWo ff =
150A
VBB
= - 5V I
B1
= 10A
L
C
= 30
H R
B2
= 1
T
j
= 125
o
C
125
V
Pulsed: Pulse duration = 3
s, duty cycle = 2 %
BUT100
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
11.00
13.10
0.433
0.516
B
1.47
1.60
0.058
0.063
C
1.50
1.65
0.059
0.065
D
8.32
8.92
0.327
0.351
E
19.00
20.00
0.748
0.787
G
10.70
11.10
0.421
0.437
N
16.50
17.20
0.649
0.677
P
25.00
26.00
0.984
1.023
R
4.00
4.09
0.157
0.161
U
38.50
39.30
1.515
1.547
V
30.00
30.30
1.187
1.193
E
B
R
C
D
A
P
G
N
V
U
O
P003O
TO-3 (version S) MECHANICAL DATA
BUT100
3/4
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
BUT100
4/4
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