BUT30V
NPN TRANSISTOR POWER MODULE
s
NPN TRANSISTOR
s
HIGH CURRENT POWER BIPOLAR MODULE
s
VERY LOW R
th
JUNCTION CASE
s
SPECIFIED ACCIDENTAL OVERLOAD
AREAS
s
ISOLATED CASE (2500V RMS)
s
EASY TO MOUNT
s
LOW INTERNAL PARASITIC INDUCTANCE
APPLICATIONS:
s
MOTOR CONTROL
s
SMPS & UPS
s
WELDING EQUIPMENT
INTERNAL SCHEMATIC DIAGRAM
July 1997
ISOTOP
Pin 4 not con nected
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Uni t
V
CEV
Collect or-Emitt er Voltage (V
BE
= -5 V)
200
V
V
CEO(sus)
Collect or-Emitt er Voltage (I
B
= 0)
125
V
V
EBO
Emitt er-Base Voltage (I
C
= 0)
7
V
I
C
Collect or Current
100
A
I
CM
Collect or Peak Current (t
p
= 10 ms)
150
A
I
B
Base Current
20
A
I
BM
Base Peak Current (t
p
= 10 ms)
30
A
P
t ot
Total Dissipation at T
c
= 25
o
C
250
W
T
stg
St orage Temperature
-55 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
V
ISO
Insulation W it hst and Volt age (AC-RMS)
2500
V
1/7
THERMAL DATA
R
t hj-ca se
R
thc -h
Thermal Resistance Junction-case
Max
Thermal Resistance Case-heats ink With Conductive
Grease Applied
Max
0.5
0.05
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
CER
Collect or Cut-off
Current (R
BE
= 5
)
V
CE
= V
CEV
V
CE
= V
CEV
T
j
= 100
o
C
1
5
mA
mA
I
CEV
Collect or Cut-off
Current (V
BE
= -5V)
V
CE
= V
CEV
V
CE
= V
CEV
T
j
= 100
o
C
1
4
mA
mA
I
EBO
Emitt er Cut-off Current
(I
C
= 0)
V
EB
= 5 V
1
mA
V
CEO (SUS)
* Collect or-Emitter
Sustaining Voltage
I
C
= 0. 2 A
L = 25 mH
V
c la mp
= 125 V
125
V
h
FE
DC Current G ain
I
C
= 100 A
V
CE
= 5 V
27
V
CE(sat )
Collect or-Emitter
Saturat ion Voltage
I
C
= 50 A
I
B
= 2.5 A
I
C
= 50 A
I
B
= 2.5 A
T
j
= 100
o
C
I
C
= 100 A
I
B
= 10 A
I
C
= 100 A
I
B
= 10 A
T
j
= 100
o
C
0. 45
0. 55
0.7
0.9
0.9
1.2
0.9
1.5
V
V
V
V
V
BE(s at)
Base-Emitt er
Saturat ion Voltage
I
C
= 50 A
I
B
= 2.5 A
I
C
= 50 A
I
B
= 2.5 A
T
j
= 100
o
C
I
C
= 100 A
I
B
= 10 A
I
C
= 100 A
I
B
= 10 A
T
j
= 100
o
C
1. 15
1.1
1. 45
1. 55
1.4
1.4
1.8
1.9
V
V
V
V
di
C
/dt
Rate of Rise of
On-stat e Collector
V
CC
= 300 V
R
C
= 0
t
p
= 3
s
I
B1
= 15 A
T
j
= 100
o
C
270
350
A/
s
V
CE
(3
s)
Collector-Emitter
Dynamic Voltage
V
CC
= 300 V
R
C
= 1
I
B1
= 15 A
T
j
= 100
o
C
2.7
3.5
V
V
CE
(5
s)
Collect or-Emitter
Dynamic Voltage
V
CC
= 300 V
R
C
= 1
I
B1
= 15 A
T
j
= 100
o
C
2
2.5
V
t
s
t
f
t
c
St orage Time
Fall T ime
Cross-over T ime
I
C
= 100 A
V
CC
= 90 V
V
BB
= -5 V
R
BB
= 0. 47
V
c la mp
= 125 V I
B1
= 10 A
L = 45
H
T
j
= 100
o
C
1
0.1
0.2
2
0.2
0.35
s
s
s
V
CEW
Maximum Collect or
Emitt er Volt age
Without Snubber
I
CW off
= 150 A
I
B1
= 10 A
V
BB
= -5 V
V
CC
= 90 V
L = 30
H
R
BB
= 0.5
T
j
= 125
o
C
125
V
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
BUT30V
2/7
Safe Operating Areas
Derating Curve
Collector Emitter Saturation Voltage
Thermal Impedance
Collector-emitter Voltage Versus
base-emitter Resistance
Base-Emitter Saturation Voltage
BUT30V
3/7
Reverse Biased SOA
Reverse Biased AOA
Switching Times Inductive Load
Foward Biased SOA
Forward Biased AOA
Switching Times Inductive Load Versus
Temperature
BUT30V
4/7
(1) Fast electronic switch
(2) Non-inductive load
Dc Current Gain
Turn-on Switching Test Circuit
Turn-on Switching Waveforms
Turn-off Switching Test Circuit
(1) Fast electronic switch
(2) Non-inductive load
(3) Fast recovery rectifier
Turn-off Switching Waveforms
BUT30V
5/7
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