BUXD87
HIGH VOLTAGE NPN POWER TRANSISTOR
s
REVERSE PINS OUT Vs STANDARD
IPAK/DPAK PACKAGE
s
HIGH VOLTAGE CAPABILITY
s
HIGH DC CURRENT GAIN
s
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX "-1")
s
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
APPLICATIONS:
s
SWITCH MODE POWER SUPPLIES
s
GENERAL PURPOSE SWITCHING
DESCRIPTION
The BUXD87 is manufactured using High Voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage withstand
capability.
INTERNAL SCHEMATIC DIAGRAM
April 1999
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CEV
Collector-Emitter Voltage (V
BE
= -1.5V)
1000
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
450
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
5
V
I
C
Collector Current
0.5
A
I
CM
Collector Peak Current (t
p
< 5 ms)
1
A
I
B
Base Current
0.3
A
I
BM
Base Peak Current (t
p
< 5 ms)
0.6
A
P
tot
Total Dissipation at T
c
= 25
o
C
20
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
3
2
1
IPAK DPAK
TO-251 TO-252
(Suffix "-1") (Suffix "T4")
1
3
1/6
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
6.25
100
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CEV
Collector Cut-off
Current (V
BE
= -1.5V)
V
CE
= 1000 V
V
CE
= 1000 V T
j
= 125
o
C
100
1
A
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
1
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
I
C
= 100 mA
450
V
V
BEO
Collector-Base
Sustaining Voltage
I
C
= 10 mA
5
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 0.1 A I
B
= 0.01 A
I
C
= 0.2 A I
B
= 0.02 A
0.8
1
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 0.2 A I
B
= 0.02 A
1
V
h
FE
DC Current Gain
I
C
= 50 mA V
CE
= 5 V
I
C
= 40 mA V
CE
= 5 V
12
50
f
T
Transition Frequency
I
C
= 50 mA V
CE
= 10 V f=1MHz
20
MHz
t
s
t
f
RESISTIVE LOAD
Storage Time
Fall Time
V
CC
= 250 V I
C
= 200 mA
I
B1
= 40 mA I
B2
= -80 mA
t
p
= 20
s
4.5
0.5
s
s
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
Safe Operating Area
Derating Curves
BUXD87
2/6
DC Current Gain
Collector Emitter Saturation Voltage
Reverse Biased SOA
DC Current Gain
Base Emitter Saturation Voltage
BUXD87
3/6
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A3
0.70
1.30
0.028
0.051
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
B3
0.85
0.033
B5
0.30
0.012
B6
0.95
0.037
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.237
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
15.90
16.30
0.626
0.642
L
9.00
9.40
0.354
0.370
L1
0.80
1.20
0.031
0.047
L2
0.80
1.00
0.031
0.039
V1
10
o
10
o
P032N_E
TO-251 (IPAK) MECHANICAL DATA
BUXD87
4/6
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.398
L2
0.8
0.031
L4
0.60
1.00
0.024
0.039
V2
0
o
8
o
0
o
0
o
P032P_B
TO-252 (DPAK) MECHANICAL DATA
BUXD87
5/6
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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1999 STMicroelectronics Printed in Italy All Rights Reserved
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BUXD87
6/6
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