BYT230PIV-1000
BYT231PIV-1000
October 1999 - Ed: 3B
FAST RECOVERY RECTIFIER DIODES
Dual high voltage rectifier devices are suited for
free-wheeling function in converters and motor
control circuits.
Packaged in ISOTOP, they are intended for use in
Switch Mode Power Supplies.
DESCRIPTION
VERY LOW REVERSE RECOVERY TIME
VERY LOW SWITCHING LOSSES
LOW NOISE TURN-OFF SWITCHING
INSULATED PACKAGE: ISOTOP
Insulation voltage: 2500 V
RMS
Capacitance = 45 pF
Inductance< 5 nH
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
1000
V
I
FRM
Repetitive peak forward current
tp=5
s F=1kHz
700
A
I
F(RMS)
RMS forward current
50
A
I
F(AV)
Average forward current
Tc = 55
C
= 0.5
30
A
I
FSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
200
A
T
stg
Storage temperature range
- 40 to + 150
C
Tj
Maximum operating junction temperature
150
C
ABSOLUTE RATINGS (limiting values, per diode)
I
F(AV)
2 x 30 A
V
RRM
1000 V
V
F
(max)
1.8 V
trr (max)
80 ns
MAIN PRODUCT CHARACTERISTICS
ISOTOP
TM
(Plastic)
K2
A2
A1
K1
BYT231PIV-1000
A2
K1
A1
K2
BYT230PIV-1000
TM: ISOTOP is a registered trademark of STMicroelectronics.
1/5
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
F
*
Forward voltage drop
Tj = 25
C
I
F
= 30 A
1.9
V
Tj = 100
C
1.8
I
R
**
Reverse leakage
current
Tj = 25
C
V
R
= V
RRM
100
A
Tj = 100
C
5
mA
Pulse test : * tp = 380
s,
< 2%
** tp = 5 ms,
< 2%
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case
Per diode
Total
1.5
0.8
C/W
R
th(c)
Coupling
0.1
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
THERMAL RESISTANCES
To evaluate the conduction losses use the following equation:
P = 1.47 x I
F(AV)
+ 0.010 I
F
2
(RMS)
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
t
rr
Tj = 25
C
I
F
= 1A V
R
= 30V dI
F
/dt = - 15A/
s
165
ns
I
F
= 0.5A I
R
= 1A I
rr
= 0.25A
80
RECOVERY CHARACTERISTICS (per diode)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
t
IRM
Ma xi mu m rev er se
r eco ve ry tim e
dI
F
/dt = - 120 A/
s
V
CC
= 200 V
I
F
= 30 A
L
p
0.05
H
Tj = 100
C
(see fig. 11)
200
ns
dI
F
/dt = - 240 A/
s
120
I
RM
Ma xi mu m rev er se
r eco ve ry cur r ent
dI
F
/dt = - 120 A/
s
19.5
A
dI
F
/dt = - 240 A/
s
22
C =
V
RP
V
CC
Turn-off overvoltage
coefficient
Tj = 100
C
V
CC
= 200V
I
F
= I
F(AV)
dI
F
/dt = - 30A/
s
L
p
= 5
H
(see fig. 12)
4.5
/
TURN-OFF SWITCHING CHARACTERISTICS (per diode)
BYT230PIV-1000 / BYT231PIV-1000
2/5
Fig. 2: Peak current versus form factor.
Fig. 3: Non repetitive peak surge current versus
overload duration.
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse duration.
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
=0.05
=0.1
=0.2
=0.5
T
=tp/T
tp
IF(av)(A)
PF(av)(W)
=1
Fig. 1: Low frequency power losses versus
average current.
Fig. 6: Recovery charge versus di
F
/dt.
Fig. 5: Voltage drop versus forward current.
BYT230PIV-1000 / BYT231PIV-1000
3/5
Fig. 7: Recovery time versus dI
F
/dt.
Fig. 8: Peak reverse current versus dI
F
/dt.
Fig. 10: Dynamic parameters versus junction
temperature.
Fig. 9: Peak forward voltage versus dI
F
/dt.
Fig. 11: Turn-off switching characteristics (without
serie inductance).
Fig. 12: Turn-off switching characteristics (with
serie inductance).
L C
DUT
VC C
IF
VF
IR M
V C C
tIR M
diF/d t
LC
DUT
V C C
LP
IF
VF
VRP
V C C
d iF /dt
BYT230PIV-1000 / BYT231PIV-1000
4/5
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1999 STMicroelectronics - Printed in Italy - All rights reserved.
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Ordering type
Marking
Package
Weight
Base qty
Delivery
mode
BYT230PIV-1000 BYT230PIV-1000
ISOTOP
28 g. (without screws)
10
Tube
BYT231PIV-1000 BYT231PIV-1000
ISOTOP
28 g. (without screws)
10
Tube
Cooling method: by conduction (C)
Recommended torque value : 1.3 N.m (MAX 1.5 N.m) for the 6 x M4 screws. (2 x M4 screws recom-
mended for mounting the package on the heatsink and the 4 screws given with the screw version).The
screws supplied with the package are adapted for mounting on a board (or other types of terminals) with
a thickness of 0.6 mm min and 2.2 mm max.
Epoxy meets UL94,V0
PACKAGE MECHANICAL DATA
ISOTOP
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
11.80
12.20
0.465
0.480
A1
8.90
9.10
0.350
0.358
B
7.8
8.20
0.307
0.323
C
0.75
0.85
0.030
0.033
C2
1.95
2.05
0.077
0.081
D
37.80
38.20
1.488
1.504
D1
31.50
31.70
1.240
1.248
E
25.15
25.50
0.990
1.004
E1
23.85
24.15
0.939
0.951
E2
24.80 typ.
0.976 typ.
G
14.90
15.10
0.587
0.594
G1
12.60
12.80
0.496
0.504
G2
3.50
4.30
0.138
0.169
F
4.10
4.30
0.161
0.169
F1
4.60
5.00
0.181
0.197
P
4.00
4.30
0.157
0.69
P1
4.00
4.40
0.157
0.173
S
30.10
30.30
1.185
1.193
BYT230PIV-1000 / BYT231PIV-1000
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