BYT30G-400
October 1999 - Ed: 3A
HIGH EFFICIENCY FAST RECOVERY DIODES
I
F(AV)
30 A
V
RRM
400 V
trr
50 ns
V
F
1.4 V
MAIN PRODUCT CHARACTERISTICS
VERY LOW REVERSE RECOVERY TIME
VERY LOW SWITCHING LOSSES
LOW NOISE TURN-OFF SWITCHING
SMD PACKAGE
FEATURES AND BENEFITS
Single rectifier suited for freewheeling in convert-
ers and motor control circuits.
Packaged in D
2
PAK, this surface mount device is
intended for use in high frequency inverters, free
wheeling and polarity protection applications.
DESCRIPTION
1
2
3
4
1 & 3
4
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
400
V
I
F(RMS)
RMS forward current
50
A
I
F(AV)
Average forward current
Tc=100
C
= 0.5
30
A
I
FSM
Surge non repetitive forward current
tp=10ms
sinusoidal
350
A
I
FRM
Repetitive peak forward current
tp = 5
s
f = 5 kHz
280
A
Tstg
Tj
Storage and junction temperature range
- 40 to + 150
C
ABSOLUTE MAXIMUM RATINGS
D
2
PAK
(Plastic)
1/5
Symbol
Parameter
Value
Unit
Rth (j-c)
Junction to case
1
C/W
THERMAL RESISTANCE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage current
V
R
= V
RRM
T
j
= 25
C
35
A
T
j
= 100
C
6
mA
V
F **
Forward voltage drop
I
F
= 30 A
T
j
= 100
C
1.4
V
I
F
= 30 A
T
j
= 25
C
1.5
Pulse test :
* tp = 5 ms,
< 2 %
** tp = 380
s,
< 2 %
To evaluate the conduction losses use the following equation :
P = 1.1 x I
F(AV)
+ 0.0095 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
rr
Reverse recovery
time
T
j
= 25
C I
F
= 0.5A
Irr = 0.25 A I
R
= 1A
50
ns
T
j
= 25
C I
F
= 1A
dI
F
/dt = -15A/
s V
R
=
30V
100
RECOVERY CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
IRM
Maximum reverse
recovery time
T
j
= 100
C dI
F
/dt = -120A/
s 75
ns
I
F
= 30 A
dI
F
/dt = -240A/
s 50
I
RM
Maximum reverse
recovery current
V
CC
= 200 V
dI
F
/dt = -120A/
s 9
ns
Lp < 0.05
H
dI
F
/dt = -240A/
s 12
C factor
Turn-off
overvoltage
coefficient
T
j
= 100
C I
F
= I
F(AV)
V
CC
= 60 V Lp = 1
H
dI
F
/dt = -30A/
s
3.3
/
TURN-OFF SWITCHING CHARACTERISTICS
PIN OUT configuration in D
2
PAK:
BYT30G-400
2/5
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0
50
100
150
200
250
300
350
400
450
500
I M(A)
P=20W
P=30W
P=40W
T
I
M
=tp/T
tp
Fig.2 : Peak current versus form factor.
0.1
1
10
100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IFM(A)
VFM(V)
Tj=100
C
o
Fig.3 : Forward voltage drop versus forward cur-
rent (maximum values).
0.001
0.01
0.1
1
0.1
1
Zth(j-c) (tp.
)
K =
Rth(j-c)
= 0 . 5
= 0 . 2
= 0 . 1
Single pulse
tp(s)
T
=tp/T
tp
K
0.2
0.5
Fig.4 : Relative variation of thermal impedance
junction to case versus pulse duration.
0
5
10
15
20
25
30
35
40
0
5
10
15
20
25
30
35
40
45
50
55
=0.05
=0.1
=0.2
=0.5
T
=tp/T
tp
IF(av)(A)
PF(av)(W)
=1
Fig.1 : Average forward power dissipation versus
average forward current.
0
20
40
60
80
100
120
140
160
0
5
10
15
20
25
30
35
T
=tp/T
tp
=0.5
F(av)(A)
I
o
Tamb( C)
Rth(j-a)=15
C/W
o
Rth(j-a)=Rth(j-c)
Fig.6 : Average current versus ambient tempera-
ture. (
: 0.5)
0.001
0.01
0.1
1
0
50
100
150
200
250
IM
t
=0.5
t(s)
IM(A)
Tc=25 C
o
Tc=60 C
o
Tc=100
C
o
Fig.5 : Non repetitive surge peak forward current
versus overload duration.
BYT30G-400
3/5
Fig.10 : Peak forward voltage versus dI
F
/dt.
Fig.9 : Peak reverse current versus dI
F
/dt.
Fig.8 : Forward recovery times versus dI
F
/dt.
Fig.7 : Reverse recovery charge versus dI
F
/dt.
Fig.11: Dynamic parameters versus junction tem-
perature.
BYT30G-400
4/5
PACKAGE MECHANICAL DATA
D
2
PAK (Plastic)
A
C2
D
R
A2
M
V2
C
A1
G
L
L3
L2
B
B2
E
*
* FLAT ZONE NO LESS THAN 2mm
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1999 STMicroelectronics - Printed in Italy - All rights reserved.
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REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.70
0.93
0.027
0.037
B2
1.14
1.70
0.045
0.067
C
0.45
0.60
0.017
0.024
C2
1.23
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
E
10.00
10.40
0.393
0.409
G
4.88
5.28
0.192
0.208
L
15.00
15.85
0.590
0.624
L2
1.27
1.40
0.050
0.055
L3
1.40
1.75
0.055
0.069
M
2.40
3.20
0.094
0.126
R
0.40 typ.
0.016 typ.
V2
0
8
0
8
FOOT PRINT (in millimeters)
8.90
3.70
1.30
5.08
16.90
10.30
BYT30G-400
5/5
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