BYT60P-1000
BYT261PIV-1000
October 1999 - Ed: 4B
FAST RECOVERY RECTIFIER DIODES
Dual or high single voltage rectifier devices suited
for Switch Mode Power Supplies and other power
converters.
These devices are packaged in ISOTOP or in
SOD93.
DESCRIPTION
VERY LOW REVERSE RECOVERY TIME
VERY LOW SWITCHING LOSSES
LOW NOISE TURN-OFF SWITCHING
INSULATED PACKAGE: ISOTOP
Insulation voltage: 2500 V
RMS
Capacitance = 45 pF
Inductance< 5 nH
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
1000
V
I
FRM
Repetitive peak forward current
tp=5
s F=1kHz
1000
A
I
F(RMS)
RMS forward current
ISOTOP
140
A
SOD93
100
I
F(AV)
Average forward current
= 0.5
Tc = 50
C
ISOTOP
60
A
Tc = 60
C
SOD93
60
I
FSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
400
A
T
stg
Storage temperature range
- 40 to + 150
C
Tj
Maximum operating junction temperature
150
C
ABSOLUTE RATINGS (limiting values, per diode)
I
F(AV)
2 x 60 A
V
RRM
1000 V
V
F
(max)
1.8 V
trr (max)
70 ns
MAJOR PRODUCT CHARACTERISTICS
ISOTOP
TM
(Plastic)
K2
A2
A1
K1
BYT261PIV-1000
TM: ISOTOP is a registered trademark of STMicroelectronics.
K
A
SOD93
(Plastic)
1/7
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
F
*
Forward voltage drop
Tj = 25
C
I
F
= 60 A
1.9
V
Tj = 100
C
1.8
I
R
**
Reverse leakage
current
Tj = 25
C
V
R
= V
RRM
100
A
Tj = 100
C
6
mA
Pulse test : * tp = 380
s,
< 2%
** tp = 5 ms,
< 2%
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case
ISOTOP
Per diode
Total
0.8
0.45
C/W
SOD93
Total
0.7
R
th(c)
Coupling
0.1
C/W
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
THERMAL RESISTANCES
To evaluate the conduction losses use the following equation:
P = 1.47 x I
F(AV)
+ 0.005 I
F
2
(RMS)
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
t
rr
Tj = 25
C
I
F
= 1A V
R
= 30V dI
F
/dt = - 15A/
s
170
ns
I
F
= 0.5A I
R
= 1A I
rr
= 0.25A
70
RECOVERY CHARACTERISTICS (per diode)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
t
IRM
Ma xi mu m rev er se
r eco ve ry tim e
dI
F
/dt = - 240 A/
s
V
CC
= 200 V
I
F
= 60 A
L
p
0.05
H
Tj = 100
C
(see fig. 13)
200
ns
dI
F
/dt = - 480 A/
s
120
I
RM
Ma xi mu m rev er se
r eco ve ry cur r ent
dI
F
/dt = - 240 A/
s
40
A
dI
F
/dt = - 480 A/
s
44
C =
V
RP
V
CC
Turn-off overvoltage
coefficient
Tj = 100
C
V
CC
= 200V
I
F
= I
F(AV)
dI
F
/dt = - 60A/
s
L
p
= 2.5
H
(see fig. 14)
3.3
4.5
/
TURN-OFF SWITCHING CHARACTERISTICS
BYT60P-1000 / BYT261PIV-1000
2/7
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
50
100
150
200
250
300
350
400
450
500
IM(A)
P=100W
P=20W
P=70W
P=40W
T
=tp/T
tp
Fig. 2-1: Peak current versus form factor (per
diode, ISOTOP).
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
Tamb(
C)
IF(av)(A)
Rth(j-a)=2.5
C/W
Rth(j-a)=Rth(j-c)
ISOTOP
SOD93
T
=tp/T
tp
Fig. 3: Average forward current versus ambient
temperature (
=0.5, per diode for ISOTOP).
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
80
90
100
110
120
130
IF(av) (A)
PF(av)(W)
T
=tp/T
tp
= 1
= 0.5
= 0.2
= 0.1
= 0.05
Fig. 1-1: Average forward power dissipation
versus average forward current (per diode,
ISOTOP).
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
50
100
150
200
250
300
350
400
450
500
IM(A)
P=100W
P=20W
P=70W
P=40W
T
=tp/T
tp
Fig. 2-2: Peak current versus form factor (SOD93).
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
80
90
100
110
120
130
IF(av) (A)
PF(av)(W)
T
=tp/T
tp
= 1
= 0.5
= 0.2
= 0.1
= 0.05
Fig. 1-2: Average forward power dissipation
versus average forward current (SOD93).
BYT60P-1000 / BYT261PIV-1000
3/7
1
10
100
200
0
20
40
60
80
100
VR(V)
C(pF)
F=1MHz
Tj=25
C
Fig. 7: Junctioncapacitance versus reverse voltage
applied (typical values, per diode for ISOTOP).
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
1
10
100
500
VFM(V)
IFM(A)
Typical values
Tj=100
C
Tj=25
C
Tj=100
C
Fig. 6: Forward voltage drop versus forward
current (maximum values, per diode for ISOTOP).
1E-3
1E-2
1E-1
1E+0
0.1
0.2
0.5
1.0
tp(s)
K=[Zth(j-c)/Rth(j-c)]
T
=tp/T
tp
Single pulse
= 0.1
= 0.2
= 0.5
Fig. 5-1: Relative variation of thermal impedance
junction to case versus pulse duration (per diode,
ISOTOP).
1E-3
1E-2
1E-1
1E+0
0
50
100
150
200
250
300
350
400
t(s)
IM(A)
Tc=60
C
Tc=25
C
I
M
t
=0.5
Fig. 4-1: Non repetitive surge peak forward current
versus overload duration (SOD93).
1E-3
1E-2
1E-1
1E+0
0
50
100
150
200
250
300
350
400
Tc=50
C
Tc=25
C
t(s)
IM(A)
I
M
t
=0.5
Fig. 4-2: Non repetitive surge peak forward current
versus overload duration (per diode, ISOTOP).
1E-3
1E-2
1E-1
1E+0
0.1
0.2
0.5
1.0
tp(s)
K=[Zth(j-c)/Rth(j-c)]
T
=tp/T
tp
Single pulse
= 0.1
= 0.2
= 0.5
Fig. 5-2: Relative variation of thermal impedance
junction to case versus pulse duration (SOD93).
BYT60P-1000 / BYT261PIV-1000
4/7
0
100
200
300
400
500
0.00
0.25
0.50
0.75
1.00
1.25
1.50
tfr(
s)
IF=IF(av)
90% confidence
Tj=100
C
dIF/dt(A/
s)
Fig. 11: Forward recovery time versus dI
F
/dt (per
diode for ISOTOP).
0
25
50
75
100
125
150
0.25
0.50
0.75
1.00
1.25
1.50
Tj(
C)
Qrr;IRM[Tj] / Qrr;IRM[Tj=100
C]
IRM
Qrr
Fig. 12: Dynamic parameters versus junction
temperature.
0
100
200
300
400
500
0
5
10
15
20
25
30
35
40
45
VFP(V)
IF=IF(av)
90% confidence
Tj=100
C
dIF/dt(A/
s)
Fig. 10: Transient peak forward voltage versus
dI
F
/dt (per diode for ISOTOP).
10
20
50
100
200
500
0
10
20
30
40
50
60
70
80
IRM(A)
IF=IF(av)
90% confidence
Tj=100
C
dIF/dt(A/
s)
Fig. 9: Recovery current versus dI
F
/dt (per diode
for ISOTOP).
10
20
50
100
200
500
0
2
4
6
8
10
dIF/dt(A/
s)
Qrr(
C)
IF=IF(av)
90% confidence
Tj=100
C
Fig. 8: Recovery charges versus dI
F
/dt (per diode
for ISOTOP).
BYT60P-1000 / BYT261PIV-1000
5/7
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