BYV 10-60
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
Metal to silicon rectifier diode in glass case featu-
ring very low forward voltage drop and fast recovery
time, intended for low voltage switching mode
power supply, polarity protection and high fre-
quency circuits.
August 1999 Ed: 1A
DO 41
(Glass)
Symbol
Parameter
Value
Unit
V
RRM
Repetitive Peak Reverse Voltage
60
V
I
F(AV)
Average Forward Current*
T
amb
= 25
C
1
A
I
FSM
Surge non Repetitive Forward Current
T
amb
= 25
C
t
p
= 10ms
20
Sinusoidal Pulse
A
T
amb
= 25
C
t
p
= 300
s
40
Rectangular Pulse
T
stg
T
j
Storage and Junction Temperature Range
- 65 to + 150
- 65 to + 125
C
C
T
L
Maximum Lead Temperature for Soldering during 10s at 4mm
from Case
230
C
ABSOLUTE RATINGS (limiting values)
Symbol
Test Conditions
Value
Unit
R
th(j-a)
Junction-ambient*
110
C/W
* On infinite heatsink with 4mm lead length
THERMAL RESISTANCE
1/4
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
I
R
*
T
j
= 25
C
V
R
= V
RRM
0.5
mA
T
j
= 100
C
10
V
F
*
I
F
= 1A
T
j
= 25
C
0.7
V
I
F
= 3A
1
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
C
T
j
= 25
C
V
R
= 0
150
pF
T
j
= 25
C
V
R
= 5V
40
DYNAMIC CHARACTERISTICS
Forward current flow in a schottky rectifier is due to
majority carrier conduction. So reverse recovery is
not affected by stored charge as in conventional PN
junction diodes.
Nevertheless, when the device switches from for-
ward biased condition to reverse blocking state,
current is required to charge the depletion capaci-
tance of the diode.
This current depends only of diode capacitance and
external circuit impedance. Satisfactory circuit be-
haviour analysis may be performed assuming that
schottky rectifier consists of an ideal diode in paral-
lel with a variable capacitance equal to the junction
capacitance (see fig. 5 page 4/4).
2/4
* Pulse test: t
p
300
s
<
2%.
Figure 1. Forward current versus forward
voltage at low level (typical values).
Figure 2. Forward current versus forward
voltage at high level (typical values).
BYV 10-60
Figure 3. Reverse current versus junction
temperature.
Figure 4. Reverse current versus V
RRM
in per
cent.
Figure 5. Capacitance C versus reverse
applied voltage V
R
(typical values).
Figure 6. Surge non repetitive forward current
for a rectangular pulse with t
10 ms.
3/4
BYV 10-60
Figure 7. Surge non repetitive forward current
versus number of cycles.
4/4
Cooling method : by convection and conduction
Marking: clear, ring at cathode end.
Weight: 0.34g
PACKAGE MECHANICAL DATA
DO 41 Glass
note 2
B
A
B
C
note 1
note 1
D
D
O
/
O
/
O
/
E
E
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.07
5.20
0.160
0.205
B
2.04
2.71
0.080
0.107
C
28
1.102
D
0.712
0.863
0.028
0.034
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BYV 10-60
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