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BYV255V
May 2000 - Ed : 2E
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
n
SUITED FOR SMPS
n
VERY LOW FORWARD LOSSES
n
NEGLIGIBLE SWITCHING LOSSES
n
HIGH SURGE CURRENT CAPABILITY
n
HIGH AVALANCHE ENERGY CAPABILITY
n
INSULATED :
Insulating voltage = 2500 V
RMS
Capacitance = 55 pF
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
FEATURES
Dual rectifier suited for switchmode power supply
and high frequency DC to DC converters.
Packaged in ISOTOP
TM
this device is intended for
use in low voltage, high frequency inverters, free
wheeling and polarity protection applications.
ISOTOP
(Plastic)
Symbol
Parameter
Value
Unit
I
F(RMS)
RMS forward current
Per diode
150
A
I
F(AV)
Average forward current
= 0.5
Tc=110
C
Per diode
100
A
I
FSM
Surge non repetitive forward current
tp=10ms
sinusoidal
Per diode
1600
A
Tstg
Tj
Storage and junction temperature range
- 40 to +
150
- 40 to + 150
C
C
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
200
V
ISOTOP is a trademark of STMicroelectronics.
K2
A2
A1
K1
BYV255V
2/5
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
I
R
*
T
j
= 25
C
V
R
= V
RRM
100
A
T
j
= 100
C
10
mA
V
F **
T
j
= 125
C
I
F
= 100 A
0.85
V
T
j
= 125
C
I
F
= 200 A
1.00
T
j
= 25
C
I
F
= 200 A
1.15
Pulse test : * tp = 5 ms, duty cycle < 2 %
** tp = 380
s, duty cycle < 2 %
ELECTRICAL CHARACTERISTICS (Per diode)
STATIC CHARACTERISTICS
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
trr
T
j
= 25
C
I
F
= 0.5A
I
R
= 1A
Irr = 0.25A
55
ns
I
F
= 1A
V
R
= 30V
dI
F
/dt = -50A/
s
80
tfr
T
j
= 25
C
I
F
= 1A
V
FR
= 1.1 x V
F
tr = 5 ns
10
ns
V
FP
T
j
= 25
C
I
F
= 1A
tr = 5 ns
1.5
V
RECOVERY CHARACTERISTICS
Symbol
Parameter
Value
Unit
Rth (j-c)
Junction to case
Per diode
0.4
C/W
Total
0.25
Rth (c)
Coupling
0.1
C/W
When the diodes 1 and 2 are used simultaneously :
Tj-Tc (diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
THERMAL RESISTANCE
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
I
RM
T
j
= 100
C
I
F
= 100A
Lp
0.05
H
Vcc
0.6 V
RRM
dIF/dt = -200A/
s
16
A
dI
F
/dt = -400A/
s
24
TURN-OFF SWITCHING CHARACTERISTICS
BYV255V
3/5
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0
50
100
150
200
250
300
350
400
450
500
P=100W
P=70W
P=40W
P=20W
T
I
M
=tp/T
tp
IM(A)
Fig.2 : Peak current versus form factor.
Tj=125 C
o
IFM(A)
1
10
100
1000
VFM(V)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Fig.3 : Forward voltage drop versus forward
current (maximum values).
0.1
1.0
0.2
0.5
Zth(j-c) (tp.
)
K =
Rth(j-c)
=0 . 5
=0 . 2
=0 . 1
Single pulse
tp(s)
T
=t p/T
tp
1.0E-03
1.0E-02
1.0E-01
1. 0E+0 0
K
Fig.4 : Relative variation of thermal impedance
junction to case versus pulse duration.
0
20
40
60
80
100
120
0
10
20
30
40
50
60
70
80
90
100
110
120
=0.05
=0.1
=0.2
=0.5
T
=tp/T
tp
IF(av)(A)
P F(av)(W)
=1
Fig.1 : Average forward power dissipation versus
average forward current.
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
T
=tp/T
tp
=0.5
F(av)(A)
I
o
Tamb( C)
Rth(j-a)=Rth(j-c)
Fig.6
:
Average
current
versus
ambient
temperature. (duty cycle : 0.5)
0.001
0.01
0.1
1
0
100
200
300
400
500
600
700
800
900
1000
I M(A)
IM
t
=0.5
t(s)
Tc=25 C
o
Tc=110 C
o
Tc=75 C
o
Fig.5 : Non repetitive surge peak forward current
versus overload duration.
BYV255V
4/5
1
10
100
200
500
550
600
650
700
750
800
VR(V)
F=1Mhz Tj=25 C
o
C(pF)
Fig.7 : Junction capacitance versus reverse
voltage applied (Typical values).
10
50
20
100
200
500
0.1
0.2
0.5
1
2
QRR(uC)
90%CONFIDENCE
IF=IF(av)
Tj=100 C
O
dIF/dt(A/us)
Fig.8 : Recovery charges versus dI
F
/dt.
0
25
50
75
100
125
150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
TYPICAL VALUE S
QRR;IRM[Tj]/QRR;IRM[Tj=100
C
o
IRM
QRR
Tj( C)
o
Fig.10 : Dynamic parameters versus junction
temperature.
10
20
50
100
200
500
1
5
2
10
20
50
90%CONFIDENCE
IF=IF(av)
Tj= 100 C
O
dIF/dt(A/us)
IRM(A)
Fig.9 : Peak reverse current versus dIF/dt.
BYV255V
5/5
n
Marking : Type number
n
Cooling method : C
n
Weight : 27 g
n
Epoxy meets UL94, V0
PACKAGE MECHANICAL DATA
ISOTOP
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
11.80
12.20
0.465
0.480
A1
8.90
9.10
0.350
0.358
B
7.8
8.20
0.307
0.323
C
0.75
0.85
0.030
0.033
C2
1.95
2.05
0.077
0.081
D
37.80
38.20
1.488
1.504
D1
31.50
31.70
1.240
1.248
E
25.15
25.50
0.990
1.004
E1
23.85
24.15
0.939
0.951
E2
24.80 typ.
0.976 typ.
G
14.90
15.10
0.587
0.594
G1
12.60
12.80
0.496
0.504
G2
3.50
4.30
0.138
0.169
F
4.10
4.30
0.161
0.169
F1
4.60
5.00
0.181
0.197
P
4.00
4.30
0.157
0.69
P1
4.00
4.40
0.157
0.173
S
30.10
30.30
1.185
1.193
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2000 STMicroelectronics - Printed in Italy - All rights reserved.
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