1/5
BYV54V
BYV541V
May 2000 - Ed : 2E
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
n
SUITED FOR SMPS
n
VERY LOW FORWARD LOSSES
n
NEGLIGIBLE SWITCHING LOSSES
n
HIGH SURGE CURRENT CAPABILITY
n
HIGH AVALANCHE ENERGY CAPABILITY
n
INSULATED :
Insulating voltage = 2500 V
RMS
Capacitance = 45 pF
DESCRIPTION
FEATURES
Dual rectifier suited for switchmode power supply
and high frequency DC to DC converters.
Packaged in ISOTOP
TM
this device is intended for
use in low voltage, high frequency inverters, free
wheeling and polarity protection applications.
ISOTOP
(Plastic)
Symbol
Parameter
Value
Unit
I
F(RMS)
RMS forward current
Per diode
100
A
I
F(AV)
Average forward current
= 0.5
Tc=90
C
Per diode
50
A
I
FSM
Surge non repetitive forward current
tp=10ms
sinusoidal
Per diode
1000
A
Tstg
Tj
Storage and junction temperature range
- 40 to +
150
- 40 to + 150
C
C
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
BYV54V / BYV541V
Unit
V
RRM
Repetitive peak reverse voltage
200
V
ISOTOP is a trademark of STMicroelectronics.
K2
A2
A1
K1
BYV541V-200
A2
K1
A1
K2
BYV54V-200
BYV54V / BYV541V
2/5
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
I
R
*
T
j
= 25
C
V
R
= V
RRM
50
A
T
j
= 100
C
5
mA
V
F **
T
j
= 125
C
I
F
= 50 A
0.85
V
T
j
= 125
C
I
F
= 100 A
1.00
T
j
= 25
C
I
F
= 100 A
1.15
Pulse test :
* tp = 5 ms, duty cycle < 2 %
** tp = 380
s, duty cycle < 2 %
ELECTRICAL CHARACTERISTICS (Per diode)
STATIC CHARACTERISTICS
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
trr
T
j
= 25
C
I
F
= 0.5A
I
R
= 1A
Irr = 0.25A
40
ns
I
F
= 1A
V
R
= 30V
dI
F
/dt = -50A/
s
60
tfr
T
j
= 25
C
I
F
= 1A
V
FR
= 1.1 x V
F
tr = 5 ns
10
ns
V
FP
T
j
= 25
C
I
F
= 1A
tr = 5 ns
1.5
V
RECOVERY CHARACTERISTICS
Symbol
Parameter
Value
Unit
Rth (j-c)
Junction to case
Per diode
1.2
C/W
Total
0.85
Rth (c)
Coupling
0.1
C/W
When the diodes 1 and 2 are used simultaneously :
Tj-Tc (diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
THERMAL RESISTANCE
BYV54V / BYV541V
3/5
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0
200
400
600
800
1000
T
I
M
=tp/T
tp
IM(A)
P=15W
P=60W
P=45W
P=30W
Fig.2 : Peak current versus form factor.
Tj=125 C
o
IFM(A)
1
10
100
500
VFM(V)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Fig.3 : Forward voltage drop versus forward
current (maximum values).
0.1
1.0
0.2
0.5
Zth(j-c) (tp.
)
K =
Rth(j-c)
=0 . 5
=0 . 2
=0 . 1
Single pulse
tp(s)
T
=t p/T
tp
1.0E-03
1.0E-02
1.0E-01
1. 0E+0 0
K
Fig.4 : Relative variation of thermal impedance
junction to case versus pulse duration.
0
5
10
15
20
25
30
35
40
45
50
0
5
10
15
20
25
30
35
40
45
=0.05
=0.1
=0.2
=0.5
T
=tp/ T
tp
IF(av)(A)
PF(av)(W)
=1
Fig.1 : Average forward power dissipation versus
average forward current.
0
20
40
60
80
100
120
140
160
0
10
20
30
40
50
60
T
=tp/T
tp
=0.5
F(av)(A )
I
o
Tamb( C)
Rth(j-a)=Rth(j-c)
Fig.6
:
Average
current
versus
ambient
temperature. (duty cycle : 0.5)
0.001
0.01
0.1
1
0
100
200
300
400
IM
t
=0.5
t(s)
IM(A)
Tc=25 C
o
Tc=50 C
o
Tc=90 C
o
Fig.5 : Non repetitive surge peak forward current
versus overload duration.
BYV54V / BYV541V
4/5
1
1 0
1 0 0
2 4 0
2 6 0
2 8 0
3 0 0
3 2 0
3 4 0
3 6 0
3 8 0
4 0 0
4 2 0
2 0 0
VR(V)
F=1Mhz Tj=25 C
o
C(pF)
Fig.7 : Junction capacitance versus reverse
voltage applied (Typical values).
1
1 0
1 00
0
1 0
20
30
40
50
60
70
80
90
1 00
110
1 20
QRR(nC)
90%CONFIDENCE
IF=IF(av)
Tj=100 C
O
Tj=25 C
O
dIF/dt(A/us)
Fig.8 : Recovery charges versus dI
F
/dt.
Tj( C)
QRR;IRM[Tj]/QRR;IRM[Tj=125 C]
0
25
50
75
100
125
150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
IRM
QRR
o
o
Fig.10 : Dynamic parameters versus junction
temperature.
1
10
100
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
20
IRM(A)
Tj=25 C
O
dIF/dt(A/us)
90%CONFIDENCE
Tj=100 C
O
IF=IF(av)
Fig.9 : Peak reverse current versus dIF/dt.
BYV54V / BYV541V
5/5
n
Marking : Type number
n
Cooling method : C
n
Weight : 27 g
n
Epoxy meets UL94, V0
PACKAGE MECHANICAL DATA
ISOTOP
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
11.80
12.20
0.465
0.480
A1
8.90
9.10
0.350
0.358
B
7.8
8.20
0.307
0.323
C
0.75
0.85
0.030
0.033
C2
1.95
2.05
0.077
0.081
D
37.80
38.20
1.488
1.504
D1
31.50
31.70
1.240
1.248
E
25.15
25.50
0.990
1.004
E1
23.85
24.15
0.939
0.951
E2
24.80 typ.
0.976 typ.
G
14.90
15.10
0.587
0.594
G1
12.60
12.80
0.496
0.504
G2
3.50
4.30
0.138
0.169
F
4.10
4.30
0.161
0.169
F1
4.60
5.00
0.181
0.197
P
4.00
4.30
0.157
0.69
P1
4.00
4.40
0.157
0.173
S
30.10
30.30
1.185
1.193
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
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