SMBYW04-200
BYW4200B
October 1999 - Ed: 4C
HIGH EFFICIENCY FAST RECOVERY DIODE
I
F(AV)
4 A
V
RRM
200 V
V
F
(max)
0.85 V
Tj (max)
150 C
MAIN PRODUCT CHARACTERISTICS
SUITED TO SMPS AND DRIVES
SURFACE MOUNT PACKAGE
VERY LOW FORWARD LOSSES
NEGLIGIBLE SWITCHING LOSSES
HIGH SURGE CURRENT CAPABILITY
FEATURES AND BENEFITS
Single chip rectifier suited to Switch Mode Power
Supplies and high frequency converters.
Packaged in DPAK and SMC, this surface mount
device is intended for use in low voltage, high
frequency inverters, free wheeling and rectification
applications.
DESCRIPTION
DPAK
BYW4200B
4
1(nc)
2
3
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
200
V
I
F(RMS)
RMS forward current
10
A
I
F(AV)
Average forward current
= 0.5
DPAK
SMC
Tcase = 130C
Tlead = 70C
4
A
I
FSM
Surge non repetitive forward current
tp = 10 ms
sinusoidal
70
A
Tstg
Storage temperature range
- 65 to + 150
C
Tj
Maximum operating junction temperature
150
C
ABSOLUTE RATINGS (limiting values)
2
4 (TAB)
3
SMC
(JEDEC DO-214AB)
SMBYW04-200
1/6
Symbol
Parameter
Package
Value
Unit
R
th (j-c)
Junction to case
DPAK
5
C/W
R
th (j-l)
Junction to leads
SMC
20
C/W
THERMAL RESISTANCE
Symbol
Tests Conditions
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage current
Tj = 25
C
V
R
= V
RRM
10
A
Tj = 100
C
0.15
0.5
mA
V
F
**
Forward voltage drop
Tj = 25
C
I
F
= 12 A
1.25
V
Tj = 100
C
I
F
= 4 A
0.8
0.85
STATIC ELECTRICAL CHARACTERISTICS
Pulse test :
* tp = 5 ms,
< 2 %
** tp = 380
s,
< 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.7 x I
F(AV)
+ 0.037 I
F
2
(RMS)
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
t
rr
Tj = 25C
I
F
= 1A
V
F
= 30V
dI
F
/dt = -50 A/
s
26
35
ns
t
fr
Tj = 25C
I
F
= 4A
V
FR
= 1.1 x V
F
max
dI
F
/dt = -50 A/
s
20
ns
V
FP
Tj = 25C
I
F
= 4A
dI
F
/dt = -50 A/
s
5
V
RECOVERY CHARACTERISTICS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
PF(av)(W)
= 0.2
= 0.5
= 1
= 0.05
= 0.1
IF(av) (A)
T
=tp/T
tp
Fig. 1: Average forward power dissipation versus
average forward current.
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
2
4
6
8
10
12
14
16
18
20
IM(A)
P=1.0W
P=1.5W
P=2.0W
P=2.5W
T
=tp/T
tp
Fig. 2: Peak current versus form factor.
SMBYW04-200 / BYW4200B
2/6
1E-3
1E-2
1E-1
1E+0
0.1
0.2
0.5
1.0
Zth(j-c)/Rth(j-c)
T
=tp/T
tp
= 0.1
= 0.2
= 0.5
Single pulse
tp(s)
Fig. 6-2: Variation of thermal impedance junction
to case versus pulse duration (BYW4200B).
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1
1.0
10.0
70.0
IFM(A)
Tj=25C
Tj=100C
(Typical values)
Tj=100C
VFM(V)
Fig. 4: Forward voltage drop versus forward
current (maximum values).
1E-3
1E-2
1E-1
1E+0
0
5
10
15
20
25
30
35
40
45
50
IM(A)
Tc=125C
Tc=75C
I
M
t
=0.5
t(s)
Fig. 5-2: Non repetitive surge peak forward current
versus overload duration (BYW4200B).
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
0.01
0.10
1.00
Zth(j-a)/Rth(j-a)
T
=tp/T
tp
= 0.1
= 0.2
= 0.5
Single pulse
tp(s)
Fig. 6-1: Variation of thermal impedance junction to
ambient versus pulse duration (recommended pad
layout, epoxy FR4, e(Cu)=35
m) (SMBYW04-200).
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
IF(av)(A)
Rth(j-a)=75C/W
Rth(j-a)=Rth(j-l)
DPAK
Rth(j-a)=Rth(j-c)
SMC
Tamb(C)
T
=tp/T
tp
Fig. 3: Average forward current versus ambient
temperature (
=0.5).
1E-3
1E-2
1E-1
1E+0
2
4
6
8
10
12
IM(A)
Ta=25C
Ta=50C
I
M
t
=0.5
t(s)
Fig. 5-1: Non repetitive surge peak forward current
versus overload duration (SMBYW04-200).
SMBYW04-200 / BYW4200B
3/6
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
10
20
30
40
50
60
70
80
90
100
Rth(j-a) (C/W)
S(Cu) (cm)
Fig. 11-1: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness:
35mm) (SMBYW04-200).
0
2
4
6
8
10
12
14
16
18
20
0
10
20
30
40
50
60
70
80
90
100
Rth(j-a) (C/W)
S(Cu) (cm)
Fig. 11-2: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35mm)
(BYW4200B).
1
10
100
0.0
0.5
1.0
1.5
2.0
2.5
IRM(A)
IF=IF(av)
90% confidence
Tj=25C
Tj=100C
dIF/dt(A/s)
Fig. 7: Reverse recovery current versus dI
F
/dt.
25
50
75
100
125
150
100
150
200
250
%
IRM
Qrr
trr
IF=4A
dIF/dt=50A/s
VR=30V
Tj(C)
Fig. 10: Dynamic parameters versus junction
temperature.
1
10
100
200
10
20
50
100
C(pF)
F=1MHz
Tj=25C
VR(V)
Fig. 9: Junction capacitance versus reverse
voltage applied (typical values).
1
10
100
0
10
20
30
40
50
60
70
80
90
100
trr(ns)
IF=IF(av)
90% confidence
Tj=25C
Tj=100C
dIF/dt(A/s)
Fig. 8: Reverse recovery time versus dI
F
/dt.
SMBYW04-200 / BYW4200B
4/6
FOOT PRINT (in millimeters)
6.7
6.7
3
3
1.6
1.6
2.3
2.3
PACKAGE MECHANICAL DATA
DPAK
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max
Min.
Max.
A
2.20
2.40
0.086
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.212
C
0.45
0.60
0.017
0.023
C2
0.48
0.60
0.018
0.023
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.251
0.259
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.397
L2
0.80 typ.
0.031 typ.
L4
0.60
1.00
0.023
0.039
V2
0
8
0
8
SMBYW04-200 / BYW4200B
5/6
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