BYW80(F)-200
October 1999 - Ed: 2D
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
TO-220AC
(Plastic)
BYW80-200
SUITED FOR SMPS
VERY LOW FORWARD LOSSES
NEGLIGIBLE SWITCHING LOSSES
HIGH SURGE CURRENT CAPABILITY
HIGH AVALANCHE ENERGY CAPABILITY
INSULATED VERSION (ISOWATT220AC) :
Insulating voltage = 2000 V DC
Capacitance = 12 pF
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
FEATURES
Single chip rectifier suited for switchmode power
supply and high frequency DC to DC converters.
Packaged in TO-220AC, or ISOWATT220AC this
device is intended for use in low voltage, high
frequency inverters, free wheeling and polarity
protection applications.
isolated
ISOWATT220AC
(Plastic)
BYW80F-200
Symbol
Parameter
Value
Unit
I
F(RMS)
RMS forward current
20
A
I
F(AV)
Average forward current
= 0.5
TO-220AC
Tc=120
C
10
A
ISOWATT220AC
Tc=95
C
10
I
FSM
Surge non repetitive forward current
tp=10ms
sinusoidal
100
A
Tstg
Tj
Storage and junction temperature range
- 65 to + 150
- 65 to + 150
C
C
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
200
V
K
A
K
A
1/6
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
I
R
*
T
j
= 25
C
V
R
= V
RRM
10
A
T
j
= 100
C
1
mA
V
F **
T
j
= 125
C
I
F
= 7 A
0.85
V
T
j
= 125
C
I
F
= 15 A
1.05
T
j
= 25
C
I
F
= 15 A
1.15
Pulse test : * tp = 5 ms, duty cycle < 2 %
** tp = 380
s, duty cycle < 2 %
To evaluate the conduction losses use the following equation :
P = 0.65 x I
F(AV)
+ 0.027 x I
F
2
(RMS)
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
trr
T
j
= 25
C
I
F
= 0.5A
I
R
= 1A
Irr = 0.25A
25
ns
I
F
= 1A
V
R
= 30V
dI
F
/dt = -50A/
s
35
tfr
T
j
= 25
C
I
F
= 1A
V
FR
= 1.1 x V
F
tr = 10 ns
15
ns
V
FP
T
j
= 25
C
I
F
= 1A
tr = 10 ns
2
V
Symbol
Parameter
Value
Unit
Rth (j-c)
Junction to case
TO-220AC
2.5
C/W
ISOWATT220AC
4.7
THERMAL RESISTANCE
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
RECOVERY CHARACTERISTICS
BYW80(F)-200
2/6
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
0
25
50
75
100
125
150
175
200
P=5W
T
I
M
=tp/T
tp
IM(A)
P=10W
P=15W
Fig.2 : Peak current versus form factor.
0.1
1
10
100
Tj= 125 C
o
IFM(A)
VFM(V)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Fig.3 : Forward voltage drop versus forward
current (maximum values).
0.1
1.0
0.2
0.5
Zth(j-c) (tp.
)
K =
Rth(j-c)
= 0 . 5
= 0 . 2
= 0 .1
Singl e puls e
tp(s)
T
=tp/T
tp
1.0E-03
1.0E-02
1.0E-01
1. 0E+00
K
Fig.4 : Relative variation of thermal impedance
junction to case versus pulse duration.
(TO-220AC)
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14
0
2
4
6
8
10
12
14
=0.05
=0.1
=0.2
=0.5
=1
T
=tp/ T
tp
IF(av)(A)
PF(av)(W)
Fig.1 : Average forward power dissipation versus
average forward current.
0.2
0.4
0.6
0.8
1
= 0 . 5
= 0 .2
= 0 .1
Single pulse
tp(s)
Zth(j-c) (tp.
)
K =
Rth(j-c)
0
1.0E-03
1.0E-02
1.0E-01
1.0 E+00
1. 0E+01
K
T
=tp/T
tp
Fig.5 : Relative variation of thermal impedance
junction to case versus pulse duration.
(ISOWATT220AC)
BYW80(F)-200
3/6
0.001
0.01
0.1
1
10
0
10
20
30
40
50
60
70
80
IM(A)
Tc=25
C
o
Tc=50 C
o
Tc= 95 C
o
IM
t
=0.5
t(s)
Fig.7 : Non repetitive surge peak forward current
versus overload duration.
(ISOWATT220AC)
0
20
40
60
80
100
120
140
160
0
1
2
3
4
5
6
7
8
9
10
11
12
o
Tamb( C)
Rth(j-a)=15
C/W
o
Rth(j-a)=Rth(j-c)
T
=tp/T
tp
=0.5
F(av)(A)
I
Fig.8
:
Average
current
versus
ambient
temperature.
(duty cycle : 0.5) (TO-220AC)
0
20
40
60
80
100
120
140
160
0
1
2
3
4
5
6
7
8
9
10
11
12
o
Tamb( C)
Rth(j-a)=15
C/W
o
Rth(j-a)=Rth(j-c)
T
=tp/T
tp
=0.5
F(av)(A)
I
Fig.9
:
Average
current
versus
ambient
temperature.
(duty cycle : 0.5) (ISOWATT220AC)
C(pF)
VR(V)
Fig.10 : Junction capacitance versus reverse
voltage applied (Typical values).
0.001
0.01
0.1
1
0
10
20
30
40
50
60
70
80
90
100
IM(A)
Tc=25
C
o
Tc= 75
C
o
Tc=120 C
o
IM
t
=0.5
t(s)
Fig.6 : Non repetitive surge peak forward current
versus overload duration.
(TO-220AC)
QRR(nC)
90% CONFIDENCE
Tj=125
C
o
IF=IF(av)
dIF/dt(A/us)
Fig.11 : Recovery charges versus dI
F
/dt.
BYW80(F)-200
4/6
Tj( C)
QRR;IRM[Tj]/QRR ;IRM[Tj=125 C]
IRM
QRR
o
O
Fig.13 : Dynamic parameters versus junction
temperature.
I RM(A)
90% CONFIDENCE
Tj=125
C
o
IF=IF(av)
dIF/dt(A/us)
Fig.12 : Peak reverse current versus dIF/dt.
PACKAGE MECHANICAL DATA
ISOWATT220AC (JEDEC outline)
Cooling method : C
Marking : Type number
Weight : 2 g
Recommended torque value : 0.55m.N
Maximum torque value : 0.70m.N
F
G
F1
H
D
E
A
B
L7
Diam
L2
L6
L3
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
B
2.50
2.70
0.098
0.106
D
2.40
2.75
0.094
0.108
E
0.40
0.70
0.016
0.028
F
0.75
1.00
0.030
0.039
F1
1.15
1.70
0.045
0.067
G
4.95
5.20
0.195
0.205
H
10.00
10.40
0.394
0.409
L2
16.00 typ.
0.63 typ.
L3
28.60
30.60
1.125
1.205
L6
15.90
16.40
0.626
0.646
L7
9.00
9.30
0.354
0.366
Diam
3.00
3.20
0.118
0.126
BYW80(F)-200
5/6
PACKAGE MECHANICAL DATA
TO-220AC (JEDEC outline)
Cooling method : C
Marking : Type number
Weight : 1.86 g
Recommended torque value : 0.8m.N
Maximum torque value : 1.0m.N
A
C
D
E
M
L7
H2
I
L5
L6
L9
L4
G
F1
F
L2
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.066
G
4.95
5.15
0.194
0.202
H2
10.00
10.40
0.393
0.409
L2
16.40 typ.
0.645 typ.
L4
13.00
14.00
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.259
L9
3.50
3.93
0.137
0.154
M
2.6 typ.
0.102 typ.
Diam. I
3.75
3.85
0.147
0.151
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1999 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
BYW80(F)-200
6/6
PDF 
ZIP