BYW80PI-200
October 1999
Ed : 2C
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
SUITED FOR SMPS
VERY LOW FORWARD LOSSES
NEGLIGIBLE SWITCHING LOSSES
HIGH SURGE CURRENT CAPABILITY
HIGH AVALANCHE ENERGY CAPABILITY
INSULATED PACKAGE :
Insulating voltage = 2500 V
RMS
Capacitance = 7 pF
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
FEATURES
Single chip rectifier suited for switchmode power
supply and high frequency DC to DC converters.
Packaged in Isolated TO220AC, this device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
isolated
TO220AC
(Plastic)
BYW80PI-200
Symbol
Parameter
Value
Unit
I
F(RMS)
RMS forward current
20
A
I
F(AV)
Average forward current
= 0.5
Tc=110
C
10
A
I
FSM
Surge non repetitive forward current
tp=10ms
sinusoidal
100
A
Tstg
Tj
Storage and junction temperature range
- 65 to + 150
- 65 to + 150
C
C
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
200
V
K
A
1/5
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
I
R
*
T
j
= 25
C
V
R
= V
RRM
10
A
T
j
= 100
C
1
mA
V
F **
T
j
= 125
C
I
F
= 7 A
0.85
V
T
j
= 125
C
I
F
= 15 A
1.05
T
j
= 25
C
I
F
= 15 A
1.15
Pulse test : * tp = 5 ms, duty cycle < 2 %
** tp = 380
s, duty cycle < 2 %
To evaluate the conduction losses use the following equation :
P = 0.65 x I
F(AV)
+ 0.027 x I
F
2
(RMS)
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
trr
T
j
= 25
C
I
F
= 0.5A
I
R
= 1A
Irr = 0.25A
25
ns
I
F
= 1A
V
R
= 30V
dI
F
/dt = -50A/
s
35
tfr
T
j
= 25
C
I
F
= 1A
V
FR
= 1.1 x V
F
tr = 10 ns
15
ns
V
FP
T
j
= 25
C
I
F
= 1A
tr = 10 ns
2
V
Symbol
Parameter
Value
Unit
Rth (j-c)
Junction to case
3.5
C/W
THERMAL RESISTANCE
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
RECOVERY CHARACTERISTICS
BYW80PI-200
2/5
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
0
25
50
75
100
125
150
175
200
P=5W
T
I
M
=tp/T
tp
IM(A)
P=10W
P=15W
Fig.2 : Peak current versus form factor.
0.1
1
10
100
Tj= 125 C
o
IFM(A)
VFM(V)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Fig.3 : Forward voltage drop versus forward
current (maximum values).
0.1
1.0
0.2
0.5
Zth(j-c) (tp.
)
K =
Rth(j-c)
= 0 . 5
= 0 . 2
= 0 .1
Singl e puls e
tp(s)
T
=tp/T
tp
1.0E-03
1.0E-02
1.0E-01
1. 0E+00
K
Fig.4 : Relative variation of thermal impedance
junction to case versus pulse duration.
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14
0
2
4
6
8
10
12
14
=0.05
=0.1
=0.2
=0.5
=1
T
=tp/ T
tp
IF(av)(A)
PF(av)(W)
Fig.1 : Average forward power dissipation versus
average forward current.
0
20
40
60
80
100
120
140
160
0
1
2
3
4
5
6
7
8
9
10
11
12
T
=tp/T
tp
=0.5
F(av)(A)
I
o
Tamb( C)
Rth(j-a)=15
C/W
o
Rth(j-a)=Rth(j-c)
Fig.6
:
Average
current
versus
ambient
temperature. (duty cycle : 0.5)
0.001
0.01
0.1
1
0
10
20
30
40
50
60
70
80
90
100
IM
t
=0.5
t(s)
IM(A)
Tc=25 C
o
Tc=110 C
o
Tc=70 C
o
Fig.5 : Non repetitive surge peak forward current
versus overload duration.
BYW80PI-200
3/5
C(pF)
VR(V)
Fig.7 : Junction capacitance versus reverse
voltage applied (Typical values).
QRR(nC)
90% CONFIDENCE
Tj=125
C
o
IF=IF(av)
dIF/dt(A/us)
Fig.8 : Recovery charges versus dI
F
/dt.
Tj(
C)
QRR ;IRM[Tj]/QRR;IRM[Tj=125 C]
IRM
QRR
o
O
Fig.10 : Dynamic parameters versus junction
temperature.
I RM(A)
90% CONFIDENCE
Tj=125
C
o
IF=IF(av)
dIF/dt(A/us)
Fig.9 : Peak reverse current versus dIF/dt.
BYW80PI-200
4/5
PACKAGE MECHANICAL DATA
TO220AC (isolated)
Cooling method : C
Marking : Type number
Weight : 1.86 g
Recommended torque value : 0.8m.N
Maximum torque value : 1.0m.N
b1
l2
a1
e
F
L
B
I
A
C
b2
c1
c2
a2
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
14.23
15.87
0.560
0.625
a1
4.50
0.177
a2
12.70
14.70
0.500
0.579
B
10.20
10.45
0.402
0.411
b1
0.64
0.96
0.025
0.038
b2
1.15
1.39
0.045
0.055
C
4.48
4.82
0.176
0.190
c1
0.35
0.65
0.020
0.026
c2
2.10
2.70
0.083
0.106
e
4.58
5.58
0.180
0.220
F
5.85
6.85
0.230
0.270
I
3.55
4.00
0.140
0.157
L
2.54
3.00
0.100
0.118
l2
1.45
1.75
0.057
0.069
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implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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BYW80PI-200
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