BYW98-200
October 1999 - Ed: 4C
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
DO-201AD
(Plastic)
VERY LOW CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
LOW FORWARD AND REVERSE RECOVERY
TIMES
FEATURES AND BENEFITS
Low voltage drop and rectifier suited for switching
mode base drive and transistor circuits.
DESCRIPTION
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
200
V
I
FRM
Repetitive peak forward current *
tp=5
s
F=1KHz
110
A
I
F (AV)
Average forward current*
Ta = 75C
= 0.5
3
A
I
FSM
Surge non repetitive forward current
t
p
= 10ms
Sinusoidal
70
A
T
stg
Storage temperature range
- 65 to + 150
C
Tj
Maximum operating junction temperature
150
C
T
L
Maximum lead temperature for soldering during 10s at
4mm from case
230
C
* On infinite heatsink with 10mm lead length.
ABSOLUTE RATINGS (limiting values)
I
F(AV)
3A
V
RRM
200 V
Tj (max)
150 C
V
F
(max)
0.85 V
trr (max)
35 ns
MAIN PRODUCT CHARACTERISTICS
1/5
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage
current
T
j
= 25
C
V
R
= V
RRM
10
A
T
j
= 100
C
0.5
mA
V
F
**
Forward voltage drop
T
j
= 25
C
I
F
= 9A
1.2
V
T
j
= 100
C
I
F
= 3A
0.78
0.85
Pulse test : * tp = 5 ms,
< 2 %
** tp = 380
s,
< 2 %
To evaluate the conduction losses use the following equations:
P = 0.75 x IF(AV) + 0.04 IF
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
t
rr
T
j
= 25
C
I
F
= 1A
dI
F
/dt = - 50A/
s
V
R
= 30V
35
ns
Q
rr
T
j
= 25
C
I
F
= 3A
dI
F
/dt = - 20A/
s
V
R
30V
15
nC
t
fr
T
j
= 25
C
I
F
= 3A
dI
F
/dt = - 50A/
s
Measured at 1.1 x V
F
max
20
ns
V
FP
T
j
= 25
C
I
F
= 3A
dI
F
/dt = - 50A/
s
5
V
RECOVERY CHARACTERISTICS
Symbol
Parameter
Value
Unit
Rth (j-a)
Junction-ambient *
25
C/W
* On infinite heatsink with 10mm lead length.
THERMAL RESISTANCE
BYW98-200
2/5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
PF(av)(W)
= 0.2
= 0.5
= 1
= 0.05
= 0.1
IF(av) (A)
T
=tp/T
tp
Fig. 1: Average forward power dissipation versus
average forward current.
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IF(av)(A)
Rth(j-a)=75C/W
Rth(j-a)=Rth(j-l)
Tamb(C)
T
=tp/T
tp
Fig. 2: Average forward current versus ambient
temperature (
=0.5).
5
10
15
20
25
0
10
20
30
40
50
60
70
80
90
Rth(C/W)
Rth(j-a)
Rth(j-l)
Lleads(mm)
Fig. 3: Thermal resistance versus lead length.
1E-1
1E+0
1E+1
1E+2
5E+2
0.01
0.10
1.00
Zth(j-a)/Rth(j-a)
tp(s)
T
=tp/T
tp
= 0.5
= 0.2
= 0.1
Single pulse
Fig. 4: Variation of thermal impedance junction to
ambient versus pulse duration (recommended pad
layout, epoxy FR4, e(Cu)=35
m).
1
10
100
200
10
20
50
100
C(pF)
F=1MHz
Tj=25C
VR(V)
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
0.10
1.00
10.00
70.00
IFM(A)
Tj=100C
(Typical values)
Tj=25C
Tj=100C
VFM(V)
Fig. 5: Forward voltage drop versus forward
current (maximum values).
BYW98-200
3/5
1
10
100
0.0
0.5
1.0
1.5
2.0
2.5
IRM(A)
IF=3A
90% confidence
Tj=100C
Tj=25C
Tj=100C
dIF/dt(A/s)
Fig. 8: Peak reverse recovery current versus
dI
F
/dt.
1
10
100
0
20
40
60
80
100
trr(ns)
IF=3A
90% confidence
Tj=100C
Tj=25C
Tj=100C
dIF/dt(A/s)
Fig. 7: Reverse recovery time versus dI
F
/dt.
25
50
75
100
125
150
100
150
200
250
%
IRM
Qrr
trr
IF=3A
dIF/dt=50A/s
VR=30V
Tj(C)
Fig. 9: Dynamic parameters versus junction
temperature.
BYW98-200
4/5
PACKAGE MECHANICAL DATA
DO-201AD
B
A
E
E
D
D
C
B
note 2
note 1
note 1
REF.
DIMENSIONS
NOTES
Millimeters
Inches
Min.
Max.
Min.
Max.
A
9.50
0.374
1 - The lead diameter
D is not controlled over zone E
2 - The minimum axial length within which the device may be
placed with its leads bent at right angles is 0.59"(15 mm)
B
25.40
1.000
C
5.30
0.209
D
1.30
0.051
E
1.25
0.049
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1999 STMicroelectronics - Printed in Italy - All rights reserved.
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Ordering code
Marking
Package
Weight
Base qty
Delivery mode
BYW98-200
BYW98-200
DO-201AD
1.16 g.
600
Box
BYW98-200RL
BYW98-200
DO-201AD
1.16 g.
1900
Tape and reel
White band indicates cathode
Epoxy meets UL94,V0
BYW98-200
5/5
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