DA108S1
DA112S1
SO8
ARRAY OF 8 OR 12 DIODES
LOW INPUT CAPACITANCE
SUITABLE FOR DIGITAL LINE PROTECTION
FEATURES
ARRAY of 8 or 12 diodes configured by cells of 2
diodes, each cell being used to protect signal line
from transient overvoltages by clamping action.
DESCRIPTION
FUNCTIONAL DIAGRAM : DA108S1
March 1998 - Ed:4
DIODE ARRAY
1
2
3
4
I/O 1
I/O 2
I/O 3
I/O 4
8
7
6
5
I/O 5
REF 2
I/O 6
REF 1
Application Specific Discretes
A.S.D.
TM
FUNCTIONAL DIAGRAM : DA112S1
1
2
3
4
I/O 1
I/O 2
I/O 3
I/O 4
8
7
6
5
REF 2
REF 1
REF 2
REF 1
Protection of logic side of ISDN S-interface.
Protection of I/O lines of microcontroller.
Signal conditioning.
APPLICATION
IEC1000-4-22level 4:
15kV (air discharge)
8kV (contact discharge)
COMPLIES WITH FOLLOWING STANDARDS :
1/5
Symbol
Parameter
Value
Unit
V
RRM
Repetitivepeak reverse voltage(for one single diode)
18
V
I
PP
Repetitive peak forward current *
8/20
s
12
A
P
Power dissipation
0.73
W
Tstg
Tj
Storage temperature range
Maximum operating junction temperature
- 55 to + 150
150
C
T
L
Maximum lead temperature for soldering during 10s.
260
C
* The surge is repeated after the device returns to ambient temperature
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25
C)
Symbol
Parameter
Value
Unit
R
th (j-a)
Junction to ambient
170
C/W
THERMAL RESISTANCES
Symbol
Parameter
Max.
Unit
V
FP
Peak forward voltage
I
PP
= 12A, 8/20
s
DA108S1
DA112S1
9
12
V
V
F
Forward voltage
I
F
= 50 mA
1.2
V
I
R
Reverse leakage current
V
R
= 15V
2
A
ELECTRICAL CHARACTERISTICS (T
amb
= 25
C)
DA108S1 / DA112S1
2/5
Fig.2 : Typical peak forward voltage characteristics (8/20
s pulse)
V
F
(V)
0.001
0.01
0.1
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Tj = 25 C
o
I
F
(A)
Typical values
V
F
(V)
1
10
20
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
Typical values
I
F
(A)
Tj = 25 C
o
Fig.1 : Input capacitance
22
24
26
28
30
32
34
36
2
4
6
8
10 12 14 16
0
C (pF)
G
I/O
V
CC
REF2
REF1
DC bias (V)
V
= 5 V
CC
V
= 15 V
CC
Typical values
V
connected between REF1 and REF2
Input applied :
DC bias + 950 mV
at 1 MHZ
CC
(RMS)
DA108S1 / DA112S1
3/5
APPLICATION 1 : ISDN Interface Protection
Residual lightning surges at transformer secondary are suppressed by DA108S1
APPLICATION 2 : Microcontroller I/O port protection
DA1x S1
x
4-6 bit input port
Vcc
Vcc
Vcc
Vcc
Vcc
I/O
I/O
I/O
I/O
c
IMPORTANT : DA108S1 must imperatively be connected to the reference voltages by REF1 and REF2.
DA108S1 / DA112S1
4/5
PACKAGE MECHANICAL DATA
SO8 (Plastic)
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco
The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
REF.
DIMENSIONS
Millimetres
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
1.75
0.069
a1
0.1
0.25 0.004
0.010
a2
1.65
0.065
b
0.35
0.48 0.014
0.019
b1
0.19
0.25 0.007
0.010
C
0.50
0.020
c1
45
(typ)
D
4.8
5.0
0.189
0.197
E
5.8
6.2
0.228
0.244
e
1.27
0.050
e3
3.81
0.150
F
3.8
4.0
0.15
0.157
L
0.4
1.27 0.016
0.050
M
0.6
0.024
S
8
(max)
Packaging: Preferencepackaging is tape and reel.
DA108S1
DA108S
DA112S1
DA112S
MARKING : Logo, Data Code,
ORDER CODE
Package : SO8 plastic
Diode ARRAY
Number of diodes
Serial
DA1
08
S 1 RL
RL : Tape and reel
: tubes
DA108S1 / DA112S1
5/5
PDF 
ZIP