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PRELIMINARY DATA
November, 20 2002
DB-960-60W
60W / 26V / 925-960 MHz PA using 1x PD57070S
The
LdmosST FAMILY
Symbol
Parameter
Value
Unit
V
DD
Supply voltage
32
V
I
D
Drain Current
8
A
P
DISS
Power Dissipation
95
W
T
CASE
Operating Case Temperature
-20 to +85
o
C
P
amb
Max. Ambient Temperature
+55
o
C
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
P
OUT
= 60 W min. with 13 dB gain over
925 - 960 MHz
10:1 LOAD VSWR CAPABILITY
BeO FREE AMPLIFIER.
DESCRIPTION
The DB-960-60W is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
amplifier designed for GSM / GPRS / EDGE base
station applications.
The DB-960-60W is designed in cooperation with
Europenne de Tlcommunications S.A
(www.etsa.fr), for high gain and broadband
performance operating in common source mode
at 26 V, capable of withstanding load mismatch up
to 10:1 all phases and with harmonics lower than
30 dBc.
ORDER CODE
DB-960-60W
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25
C)
MECHANICAL SPECIFICATION
L=60 mm W=30 mm H=10 mm
DB-960-60W
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Symbol
Test Conditions
Min.
Typ.
Max.
Unit
FREQ.
Frequency Range
925
960
MHz
Gain
P
OUT
= 60 W
13
14
dB
P
1dB
Over frequency range: 925 - 960 MHz
60
65
W
Flatness
Over frequency range and @ P
OUT
= 60 W
+/- 0.5
dB
Flatness
P
OUT
from 0.1 W to 60 W
1
dB
ND at P
1dB
P
1dB
45
52
%
IRTL
Input return Loss P
OUT
from 0.1 W to 60 W
-15
-10
dB
Harmonic
P
OUT
= 60 W
-30
dBc
VSWR
Load Mismatch all phases @ P
OUT
= 60 W
10:1
Spurious
10:1 VSWR all phases and P
OUT
from 0.1 to 60 W
-76
dBc
IMD
3
P
OUT
= 60 WPEP
-25
dBc
ELECTRICAL SPECIFICATION (T
amb
= +25
o
C, Vdd = 26 V, Idq = 200 mA)
TYPICAL PERFORMANCE
Power Gain Vs Frequency (P
OUT
= 60 W)
10
11
12
13
14
15
16
17
18
910
920
930
940
950
960
970
f (MHz )
Gp (
d
B
m
)
Vdd = 26 V
Idq = 200 m A
P1dB and Efficiciency Vs Frequency
60
64
68
72
76
80
910
920
930
940
950
960
970
f (MHz)
P
1dB
(W
)
40
44
48
52
56
60
Nd
(
%
)
Vdd = 26 V
Idq = 200 m A
E fficienc y
P1dB
3/4
DB-960-60W
TEST FIXTURE COMPONENT LAYOUT
TEST CIRCUIT PHOTOMASTER
TEST CIRCUIT COMPONENT PART LIST
Re f.
Va lue
Re f. M a nufa cture r
M a nufa cture r
1
R F Pow e r Am plifier C ircu it
PC IR 5 010 03
ETSA
C V1, C V2
Trim capacitor H Q 0.6-4 .5 pF 500 V
AT272 73
TEC K
C 4
C hip C apacitor H Q 0603 1 00pF TA 5% 50V
5 00-C H A-101 -JVLE
TEKELEC
C 10, C 12
C hip C ap acitor H Q 3.3p F TB +/- 0,25p F 500 V
501-C H B-3R 3 -C VLE
TEKELEC
C 9
C hip C ap acitor H Q 8,2p F TB +/- 0,25p F 500 V
501-C H B-8R 2 -C VLE
TEKELEC
C 5 , C 7, C 13
C hip C ap acitor H Q 10 pF TB 5% 500 V
5 01-C H B-100 -JVLE
TEKELEC
C 6, C 8
C hip C ap acitor H Q 47 pF TB 5% 500 V
5 01-C H B-470 -JVLE
TEKELEC
C 3
C h ip C a pacitor H Q 1 00p F TB 5% 500V
5 01-C H B-101 -JVLE
TEKELEC
C 2
C apa cito r 12 06 100 nF 63V X7R 10%
VJ120 6Y10 4KXAT/630
VISH AY
C 1
C apa citor C MS ta ntale 1F 20 % 3 5V
293D 105X9035 B
Vis ha y-Sprague
R 1
R e s is tor C MS 4,7K 120 6 1/4W 5%
2759 7
BOU R N S
R 2
R es is to r C MS 10 K 12 06 1/4W 5%
2760 5
BOU R N S
P1
Trim res is tor C MS cerm et 3 224 W 10 K
32 24W-103
BOU R N S
D 1
Zen er D iod e 5.1V 500 m W SOD 8 0
BZV55C 5V1
OMN ITEC H
T1
R F LD MOS Trans is to r 28V 7 0W 1 3dB GSM
PD 57 070S
STMicrolectronics
DB-960-60W
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