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EMIF04-10006F1
January 2003 - Ed: 1
IEC 61000-4-2 level 4:
15kV
(air discharge)
8 kV
(contact discharge)
MIL STD 883E - Method 3015-6 Class 3
COMPLIES WITH THE FOLLOWING STANDARDS :
Flip-Chip package
I3
O3
D1
D2
D3
Gnd
Gnd
Gnd
D4
I2
O2
I4
O4
I1
O1
9
8
7
6
5
4
3
2
1
A
B
C
PIN CONFIGURATION (ball side)
s
EMI symmetrical (I/O) low-pass filter
s
High efficiency in EMI filtering
s
Very low PCB space consuming:
2.92mm x 1.29mm
s
Very thin package: 0.65 mm
s
High efficiency in ESD suppression
(IEC61000-4-2 level 4)
s
High reliability offered by monolithic integration
s
High reducing of parasitic elements through
integration and wafer level packaging.
BENEFITS
4 LINES EMI FILTER
AND ESD PROTECTION
IPAD
TM
Where EMI filtering in ESD sensitive equipment is required:
s
Mobile phones and communication systems
s
Computers, printers and MCU Boards
MAIN PRODUCT CHARACTERISTICS
The EMIF04-10006F1 is a highly integrated devices
designed to suppress EMI/RFI noise in all systems
subjected to electromagnetic interferences. The
EMIF04 flip-chip packaging means the package size
is equal to the die size.
This filter includes an ESD protection circuitry which
prevents the device from destruction when subjected
to ESD surges up 15kV. This device includes four
EMIF filters and 4 separated ESD diodes.
DESCRIPTION
TM : IPAD is a trademark of STMicroelectronics.
Input 1
Input 2
Input 3
Output 1
Output 2
Output 3
GND
Input 4
D1
D3
Output 4
D2
D 4
Filtering cells:
Ri/o = 100
Cline = 60pF
BASIC CELL CONFIGURATION
EMIF04-10006F1
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Symbol
Parameter and test conditions
Value
Unit
P
R
DC power per resistance
0.1
W
P
T
Total DC power per package
0.6
W
T
j
Maximum junction temperature
125
C
T
op
Operating temperature range
-40 to + 85
C
T
stg
Storage temperature range
125
C
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
V
BR
Breakdown voltage
I
RM
Leakage current @ V
RM
V
RM
Stand-off voltage
V
CL
Clamping voltage
R
d
Dynamic impedance
I
PP
Peak pulse current
R
I/O
Series resistance between Input
and Output
C
line
Input capacitance per line
ELECTRICAL CHARACTERISTICS (T
amb
= 25 C)
I
V
I
F
V
F
I
RM
I
R
I
PP
V
RM
V
BR
V
CL
Symbol
Test conditions
Min.
Typ.
Max.
Unit
V
BR
I
R
= 1 mA
5.5
7
9
V
I
RM
V
RM
= 3.3 V per line
500
nA
R
I/O
I = 10 mA
80
100
120
C
line
V
R
= 2.5 V, F = 1 MHz, 30 mV (on filter cells)
50
60
70
pF
EMIF04-10006F1
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1M
3M
10M
30M
100M 300M
1G
3G
-50
-37.5
-25
-12.5
00
Aplac 7.62 User: ST Microelectronics
dB
1M
3M
10M
30M
100M 300M
1G
3G
-50
-37.5
-25
-12.5
00
Aplac 7.62 User: ST Microelectronics
dB
f/Hz
i3-o3-load
Simulation
Fig. 1: S21 (dB) attenuation measurements and
Aplac simulation.
Aplac 7.62 User: ST Microelectronics
100k
1M
10M
100M
1G
00
-25
-50
-75
-100
Aplac 7.62 User: ST Microelectronics
dB
dB
i3_o2.s2p
f/Hz
Fig. 2: Analog crosstalk measurements.
Fig. 3: Digital crosstalk measurements.
Fig. 4: ESD response to IEC61000-4-2 (+15kV air
discharge) on one input V(in) and one output V(out).
Fig. 5: ESD response to IEC61000-4-2 (-15kV air
discharge) on one input V(in) and one output V(out).
0
10
20
30
40
50
60
70
80
90
100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V (V)
R
C(pF)
F=1MHz
V
osc
=30mV
RMS
T
j
=25C
Fig. 6: Line capacitance versus applied voltage for
filter.
EMIF04-10006F1
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EMIF04-10006F1 model
Ground return for each GND bump
Oi * = Output of each filter cell
Ii* = Input of each filter cell
Oi*
Cz=41pF@0V
Cz=41pF@0V
sub
Rs=100
Lbump
Rbump
Rsub
Cbump
Ii*
Rsub
Lbump
Rbump
Cbump
Di*
Cz=41pF@0V
Cz=41pF@0V
sub
Lbump
Rbump
Rsub
Cbump
Dj *
Rsub
Lbump
Rbump
Cbump
With Dj* = D1 & D3
And Di* = D2 & D4
sub
Lbump
Rbump
sub
Rsub
Lgnd
Rgnd
Cgnd
Cgnd
Cgnd
Aplac model
aplacvar Rs
100
aplacvar Cz
41 pF
aplacvar Lbump
50 pH
aplacvar Rbump
20 m
aplacvar Cbump
1.2 pF
aplacvar Rsub
100 m
aplacvar Rgnd
100 m
aplacvar Lgnd
100 pH
aplacvar Cgnd
0.15 pF
Aplac parameters
EMIF04-10006F1
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EMIF yy
xxx zz F 1
-
EMI Filter
Number of lines
x: resistance value ( ) z: capacitance value / 10 (pF)
or
application (3 letters) and version (2 digits)
FLIP CHIP
Pitch = 500m
Bump = 315m
ORDER CODE
2.92mm 50m
1.29mm 50m
435m 50
315m 50
501m
50
500m 50
250m 50
650m 65
PACKAGE MECHANICAL DATA
545
545
400
100
230
x
y
x
w
x
w
Dot, ST logo
xxx = marking
yww = datecode
(y = year
ww = week)
All dimensions in m
MARKING
Copper pad Diameter :
250m recommended , 300m max
Solder stencil opening : 330m
Solder mask opening recommendation :
340m min for 300m copper pad diameter
FOOT PRINT RECOMMENDATIONS
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