EMIF10-COM01
January 2002 - Ed: 5A
1/5
Flip Chip package
1
2
3
4
5
E
D
C
B
A
02
04
03
05
06
09
08
010
07
GND
GND
GND
I1
I9
I8
I10
I2
I4
I3
I5
GND
GND
I6
I7
01
PIN CONFIGURATION (Ball Side)
EMI FILTER
INCLUDING ESD PROTECTION
IPAD.
TM
The EMIF10-COM01 is a highly integrated device
designed to suppress EMI / RFI noise in all
systems
subjected
to
electromagnetic
interferences. The EMIF10 flip-chip packaging
means the package size is equal to the die size.
That's why EMIF10-COM01 is a very small device.
Additionally, this filter includes an ESD protection
circuitry which prevents the protected device from
destruction when subjected to ESD surges up to
DESCRIPTION
ASD is a trademark of STMicroelectronics.
Where EMI filtering in ESD sensitive equipment is
required:
s
Computers and printers
s
Communication systems
s
Mobile phones
MAIN APPLICATIONS
s
EMI symetrical (I/O) low-pass filter
s
Very low PCB space consuming:
2.64 x 2.64 mm
2
s
Very thin package: 0.63 mm
s
High efficiency in ESD suppression on both input
& output PINS (IEC61000-4-2 level 4).
s
High reliability offered by monolithic integration
BENEFITS
Output
Low-pass Filter
R
= 200
Cinput = 45 pF
I/O
Input
BASIC CELL CONFIGURATION
IEC61000-4-2 level 4 15 KV (air discharge)
8 kV
(contact discharge)
COMPLIES WITH FOLLOWING STANDARD:
EMIF10-COM01
2/5
1.0M
3.0M
10.0M
30.0M
100.0M
300.0M
1.0G
3.0G
-50.00
-45.00
-40.00
-35.00
-30.00
-25.00
-20.00
-15.00
-10.00
-5.00
0.00
EMIF10-COM01: Typical S21(dB) measurement on line I10/O10
dB
f/Hz
Filtering Behavior
Vout
Vin
Rise Time
1.0M
3.0M
10.0M
30.0M
100.0M
300.0M
1.0G
3.0G
-80.00
-75.00
-70.00
-65.00
-60.00
-55.00
-50.00
-45.00
-40.00
-35.00
-30.00
-25.00
-20.00
-15.00
-10.00
-5.00
0.00
dB
f/Hz
EMIF10-COM01: Typical A1/A2 crosstalk measurement
Crosstalk Behavior
TEST BOARD
out2
in1
50
Vg
50
EMIF10
COM01
Analog Crosstalk: Measurements
10
20
30
40
50
0
1
2
3
4
5
VR(V)
C(pF)
F=1MHz
Vosc=30mV
Capacitance versus reverse applied voltage
Note: Spikes at high frequencies are induced by the PCB layout
EMIF10-COM01
In
Out
Square signal
Generator Vc = 2.8V
100k
Vout
Vin
Rise Time: Measurement
EMIF10-COM01
3/5
Symbol
Parameters
V
BR
Breakdown voltage
I
RM
Leakage current @ V
RM
V
RM
Stand-off voltage
V
CL
Clamping voltage
R
d
Dynamic impedance
I
PP
Peak pulse current
R
I/O
Series resistance between Input &
Output
C
in
Input capacitance per line
ELECTRICAL CHARACTERISTICS (T
amb
= 25C)
V
I
V
RM
PP
I
RM
I
V
BR
R
I
V
CL
slope : 1 / R
d
Symbol
Parameter and test conditions
Value
Unit
V
PP
ESD discharge IEC61000-4-2, air discharge
ESD discharge IEC61000-4-2, contact discharg
15
8
kV
T
j
Junction temperature
125
C
T
op
Operating temperature range
-40 to + 85
C
T
stg
Storage temperature range
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 C)
Symbol
Test conditions
Min
Typ
Max
Unit
V
BR
I
R
= 1mA
6
8
10
V
I
RM
V
RM
= 3V per line
500
nA
R
d
I
PP
= 10A, t
p
= 2.5
s (see note 1)
1
R
I/O
180
200
220
C
in
At 0V bias
45
50
pF
t
LH
Vout = 2.8V
Rload = 100k
25
ns
EMIF10-COM01
4/5
EMIF 10 - COM 01
EMI Filter
Nb of lines
For communication
Version
ORDERING CODE
Demif10 model
BV = 7
IBV = 1m
CJO = 25p
M = 0.3333
RS = 1
VJ = 0.6
TT = 100n
out
in
200R
MODEL = demif10
MODEL = demif10
sub
APLAC MODEL
In order to ensure a good efficiency in terms of ESD protection and filtering behavior, we recommend to
implement microvias (100 m dia.) between the GND bumps and the GND layer. GND bumps can be
connected together in PCB layer 1, and in addition, if possible, use through hole vias (200 um dia.) in both
sides of filter to improve contact to GND (layer). This layout will minimize the distance to the ground and
thus parasitic inductances. In addition, we recommend to have GND plane wherever possible.
PCB grounding recommendations
EMIF10-COM01
5/5
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2002 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany
Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore
Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
2640
2640
500
PACKAGE MECHANICAL DATA
DIE SIZE
2640
300
300
2640
diam 400
W
F E T
Y W
MARKING
650
s
Die size: (2640 50) x (2640 50)
s
Die height (including bumps): 650 65
s
Bump diameter: 315 50
s
Pitch: 500 50
s
Weight: 9.3mg
EMIF10-COM01 is delivered in Tape & Reel (7 inches reel); one Tape & Reel contains 5000 dice.
PACKING:
All dimensions in
m
Note: More packing information are available in the application note AN1235: "Flip-Chip package description and recom-
mendations for use"
s
Y W W: Date code
PDF 
ZIP