ESDA25DB3
January 1998 - Ed : 2
18 BIDIRECTIONAL TRANSIL
TM
FUNCTIONS
LOW CAPACITANCE : C = 30pF @ V
RM
500 W peak pulse power (8/20
s)
FEATURES
SO20
FUNCTIONAL DIAGRAM
1
2
3
4
5
6
7
8
9
10
I/O 18
I/O 17
I/O 16
I/O 15
I/O 14
I/O 13
I/O 12
I/O 11
I/O 10
20
19
18
17
16
15
14
13
12
11
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
I/O 8
I/O 9
GND
GND
DESCRIPTION
The ESDA25DB3 is a dual monolithic voltage
suppressor designed to protect componentswhich
are connected to data and transmission lines
against ESD.
TRANSIL
TM
ARRAY
FOR ESD PROTECTION
Application Specific Discretes
A.S.D.
TM
Where transient overvoltage protection in esd
sensitive equipment is required, such as :
- COMPUTERS
- PRINTERS
- COMMUNICATION SYSTEMS
It is particulary recommended for RS232 I/O port
protectionwhere the line interface withstands 2 kV,
ESD surges.
APPLICATIONS
BENEFITS
High ESD protection level : up to 25 kV
High integration
Suitable for high density boards
IEC 1000-4-2 : level 4
MIL STD 883C-Method 3015-6 : class 3
(human body model)
COMPLIESWITH THE FOLLOWINGSTANDARDS :
1/5
Symbol
Parameter
V
RM
Stand-off voltage
V
BR
Breakdown voltage
V
CL
Clamping voltage
I
RM
Leakage current
I
PP
Peak pulse current
T
Voltage temperature coefficient
C
Capacitance
Rd
Dynamic resistance
ELECTRICAL CHARACTERISTICS (T
amb
= 25
C)
Symbol
Parameter
Value
Unit
V
PP
Electrostatic discharge
MIL STD 883C - Method 3015-6
25
kV
P
PP
Peak pulse power (8/20
s)
500
W
T
stg
T
j
Storage temperature range
Maximum junction temperature
- 55 to + 150
125
C
C
T
L
Maximum lead temperature for soldering during 10s
260
C
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25
C)
Types
V
BR
@
I
R
I
RM
@
V
RM
Rd
T
C
min.
max.
max.
typ.
max.
typ.
note1
note1
note 2
note 3
0V bias
V
V
mA
A
V
10
-4
/
C
pF
ESDA25DB3
25
30
1
2
24
0.5
9.7
50
note 1 : Betwenn any I/O pin Groung
note 2 : Square pulse, Ipp = 25A, tp=2.5
s.
note 3 :
V
BR
=
T* (Tamb -25
C) * V
BR
(25
C)
ESDA25DB3
2/5
The ESDA family has been designed to clamp fast
spikes like ESD. Generally the PCB designers
need to calculate easily the clamping voltage V
CL
.
This is why we give the dynamic resistance in
addition to the classical parameters. The voltage
across the protection cell can be calculated with
the following formula:
V
CL
= V
BR
+ Rd I
PP
WhereIpp is the peakcurrent throughthe ESDAcell.
DYNAMIC RESISTANCE MEASUREMENT
The short duration of the ESD has led us to prefer
a more adapted test wave, as below defined, to the
classical 8/20
s and 10/1000
s surges.
2.5
s duration measurement wave.
As the value of the dynamic resistance remains
stable for a surge duration lower than 20
s, the
2.5
s rectangular surge is well adapted. In addition
both rise and fall times are optimized to avoid any
parasitic phenomenon during the measurement of
Rd.
CALCULATION OF THE CLAMPING VOLTAGE
USE OF THE DYNAMIC RESISTANCE
2
s
tp = 2.5
s
t
I
Ipp
ESDA25DB3
3/5
0
25
50
75
100
125
150
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
Ppp[Tj initial]/Ppp[Tj initial=25
C]
Tj initial(
C)
Fig. 1 : Peak power dissipation versus initial
junction tempearature.
20
25
30
35
40
45
50
55
60
0.1
1.0
10.0
50.0
Ipp(A)
tp=2.5
s
V
(V)
CL
Fig.
3 : Clamping voltage versus peak pulse
current (Tj initial = 25
C).
Rectangular waveform tp = 2.5
s.
1
10
100
100
1000
5000
Ppp(W)
tp(
s)
Fig. 2 : Peak pulse power versus exponential
pulse duration (Tj initial = 25
C).
1
2
5
10
30
10
20
50
100
C(pF)
F=1MHz
Vosc=30mV
V (V)
R
Fig. 4 : Capacitance versus reverse applied
voltage (typical values).
25
50
75
100
125
1
10
100
200
I [Tj] / I [Tj=25
C]
R
R
Tj(
C)
Fig. 5 : Relative variation of leakagecurrent versus
junction temperature (typical values).
ESDA25DB3
4/5
PACKAGE MECHANICAL DATA
SO20 Plastic
Packaging : Preferred packaging is tape and reel.
Weight : 0.55g.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco
The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
MARKING : Logo, Date Code, E25DB3
REF.
DIMENSIONS
Millimetres
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
2.65
0.104
A1
0.10
0.20 0.004
0.008
B
0.33
0.51 0.013
0.020
C
0.23
0.32 0.009
0.013
D
12.6
13.0 0.484
0.512
E
7.40
7.60 0.291
0.299
e
1.27
0.050
H
10.0
10.65 0.394
0.419
h
0.50
0.020
L
0.50
1.27 0.020
0.050
K
8
(max)
K
hx45
C
L
A
A1
B
e
D
E
H
ORDER CODE
ESDA
25 D B 3
RL
V
BR
min
Package: SO20
PACKAGING:
RL = Tape and reel
= Tube
ESD ARRAY
Bidirectionel
ESDA25DB3
5/5
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