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ESDA6V1-5P6
October 2002 - Ed: 1
TRANSILTM ARRAY
FOR ESD PROTECTION
SOT-666
Where transient overvoltage protection in ESD
sensitive equipment is required, such as :
s
Computers
s
Printers
s
Communication systems and cellular phones
s
Video equipment
This device is particularly adpated to the protection
of symmetrical signals.
MAIN APPLICATIONS
Application Specific Discretes
A.S.D.
I/O1
I/O2
GND
I/O5
I/O4
I/O3
FUNCTIONAL DIAGRAM
s
5 UNIDIRECTIONAL TRANSILTM FUNCTIONS.
s
BREAKDOWN VOLTAGE V
BR
= 6.1V MIN
s
LOW LEAKAGE CURRENT < 500 nA
s
VERY SMALL PCB AREA < 2.6 mm
2
FEATURES
The ESDA6V1-5P6 is a monolithic array designed
to protect up to 5 lines against ESD transients.
This device is ideal for applications where board
space saving is required.
DESCRIPTION
s
High ESD protection level.
s
High integration.
s
Suitable for high density boards.
BENEFITS
s
IEC61000-4-2 level 4: 15 kV (air discharge)
8 kV (contact discharge)
s
MIL STD 883E-Method 3015-7: class 3
25kV HBM (Human Body Model)
COMPLIES WITH THE FOLLOWING STANDARDS :
ESDA6V1-5P6
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Symbol
Parameter
V
RM
Stand-off voltage
V
BR
Breakdown voltage
V
CL
Clamping voltage
I
RM
Leakage current
I
PP
Peak pulse current
T
Voltage tempature coefficient
V
F
Forward voltage drop
C
Capacitance per line
R
d
Dynamic resistance
ELECTRICAL CHARACTERISTICS (T
amb
= 25C)
V
I
V
CL
V
BR
V
RM
I
F
V
F
I
RM
I
PP
Slope: 1/R
d
Symbol
Parameter
Test conditions
Value
Unit
V
PP
ESD discharge - IEC61000-4-2 air discharge
IEC61000-4-2 contact discharge
15
8
kV
P
PP
Peak pulse power (8/20
s) (see note 1)
T
j
initial = Tamb
150
W
T
j
Junction temperature
125
C
T
stg
Storage temperature range
- 55 to + 150
C
T
L
Maximum lead temperature for soldering during 10s at 5mm for case
260
C
T
op
Operating temperature range
- 40 to + 150
C
Note 1: for a surge greater than the maximum values
,
the diode will fail in short-circuit.
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25C)
Types
V
BR
@
I
R
I
RM
@
V
RM
Rd
T
C
min.
max.
max.
typ.
max.
typ.
@ 0V
V
V
mA
A
V
10
-4
/C
pF
ESDA6V1-5P6
6.1
7.2
1
0.5
3
1.5
4.5
70
Symbol
Parameter
Value
Unit
R
th(j-a)
Junction to ambient on printed circuit on recommended pad layout
220
C/W
THERMAL RESISTANCES
ESDA6V1-5P6
3/5
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
25
50
75
100
125
150
P
[T initial] / P
[T initial=25C)
PP
j
PP
j
T (C)
j
Fig. 1: Relative variation of peak pulse power
versus initial junction temperature.
10
100
1000
1
10
100
P
(W)
PP
T (s)
p
T initial=25C
j
Fig. 2: Peak pulse power versus exponential pulse
duration.
0.1
1.0
10.0
100.0
0
10
20
30
40
50
60
70
I
(A)
PP
V
(V)
CL
t =2.5s
T initial=25C
p
j
Fig. 3: Clamping voltage versus peak pulse
current (typical values, rectangular waveform).
1.E-03
1.E-02
1.E-01
1.E+00
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I
(A)
FM
V
(V)
FM
T =125C
j
T =25C
j
Fig. 4: Forward voltage drop versus peak forward
current (typical values).
0
10
20
30
40
50
60
70
80
0
1
2
3
4
5
6
C(pF)
V (V)
R
F=1MHz
V
=30mV
T =25C
OSC
RMS
j
Fig. 5: Junction capacitance versus reverse
voltage applied (typical values).
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
25
50
75
100
125
I [T ] / I [T =25C]
R
j
R
j
V =3V
R
T (C)
j
Fig. 6: Relative variation of leakage current versus
junction temperature (typical values).
ESDA6V1-5P6
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IEC61000-4-2: V
=8kV Contact
PP
Fig. 7: ESD response @ V
PP
=8kV contact.
IEC61000-4-2: V
=15kV Contact
PP
Fig. 8: ESD response @ V
PP
=15kV contact.
ESDA 6V1 5 P6
ESD ARRAY
V
min
BR
5 lines
PACKAGE: SOT-666
ORDER CODE
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
ESDA6V1-5P6
C
SOT-666
2.9 mg.
3000
Tape & reel
ESDA6V1-5P6
5/5
PACKAGE MECHANICAL DATA
SOT-666
D
bp
e1
e
E
Lp
He
A
U
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
0.50
0.60
0.020
0.024
bp
0.17
0.27
0.007
0.011
c
0.08
0.18
0.003
0.007
D
1.50
1.70
0.060
0.067
E
1.10
1.30
0.043
0.051
e
1.00
0.040
e1
0.50
0.020
He
1.50
1.70
0.059
0.067
Lp
0.10
0.30
0.004
0.012
0.5
0.3
2.75
0.43
1.16
FOOT PRINT (in millimeters)
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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