PRELIMINARY DATA
Rev 1
November 2005
1/10
10
This is a preliminary information on a new product in development or undergoing evaluation. Details are subject to change
without notice
STGB6NB60HD
N-CHANNEL 6A - 600V - D
2
PAK
Low Drop PowerMESHTM IGBT
General features
LOWER C
RES
/ C
IES
RATIO (NO CROSS
CONDUCTION SUSCEPTIBILITY)
HIGH FREQUENCY OPERATION
VERY SOFT ULTRA FAST RECOVERY ANTI
PARALLEL DIODE
TYPICAL SHORT CIRCUIT WITHSTAND
TIME 5MICROS S-family, 4micro H-family
CO-PACKAGE WITH TURBOSWITCHTM
ANTIPARALLEL DIODE
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
TM
IGBTs, with outstanding
performances. The suffix "H" identifies a family
optimized for high frequency application.
Applications
HIGH FREQUENCY MOTOR CONTROL
SMPS and PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
Order codes
Internal schematic diagram
Type
V
CES
V
CE(sat)
(Max)@ 25C
I
C
@100C
STGB6NB60HD
600V
< 2.7V
6A
1
3
DPAK
Sales Type
Marking
Package
Packaging
STGB6NB60HD
GB6NB60HD
DPAK
TAPE & REEL
www.st.com
1 Electrical ratings
STGB6NB60HD
2/10
1 Electrical
ratings
Table 1.
Absolute maximum ratings
Table 2.
Thermal resistance
Symbol
Parameter
Value
Unit
V
CES
Collector-Emitter Voltage (V
GS
= 0)
600
V
I
C
Collector Current (continuous) at 25C
12
A
I
C
Collector Current (continuous) at 100C
6
A
I
CM
Note
1
Collector Current (pulsed)
48
A
V
GE
Gate-Emitter Voltage
20
V
P
TOT
Total Dissipation at T
C
= 25C
80
W
T
j
Operating Junction Temperature
65 to 150
C
T
stg
Storage Temperature
Min.
Typ.
Max.
Unit
Rthj-case
Thermal Resistance Junction-case
1.56
C/W
Rthj-amb
Thermal Resistance Junction-ambient
62.5
C/W
Rthc-h
Thermal Resistance case-hetsink
0.5
C/W
STGB6NB60HD
2 Electrical characteristics
3/10
2 Electrical
characteristics
(T
CASE
= 25 C unless otherwise specified)
Table 3.
Static
Table 4.
Dynamic
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
BR(CES)
Collectro-Emitter Breakdown
Voltage
I
C
= 250A, V
GE
= 0
600
V
V
CE(SAT)
Collector-Emitter Saturation
Voltage
V
GE
= 15V, I
C
= 6A, Tj= 25C
V
GE
= 15V, I
C
= 6A, Tj= 125C
2.1
1.6
2.7
V
V
V
GE(th)
Gate Threshold Voltage
V
CE
= V
GE
, I
C
= 250A
3
5
V
I
CES
Collector-Emitter Leakage
Current (V
GE
= 0)
V
CE
= Max Rating,Tc=25C
V
CE
= Max Rating, Tc=125C
50
500
A
A
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
V
GE
= 20V , V
CE
= 0
100
nA
g
fs
Forward Transconductance
V
CE
= 25V
,
I
C
= 6A
3
4.5
S
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 25V, f = 1MHz, V
GE
= 0
390
45
10
560
68
15
730
90
20
pF
pF
pF
Q
g
Q
ge
Q
gc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CE
= 480V, I
C
= 6A,
V
GE
= 15V,
(see Figure 2)
42
7.9
17.6
55
nC
nC
nC
I
CL
Turn-Off SOA Minimum
Current
V
clamp
= 480V
,
Tj = 150C
R
G
= 10
,
V
GE
= 15V
52
A
2 Electrical characteristics
STGB6NB60HD
4/10
Table 5.
Switching on/off (inductive load)
Table 6.
Switching energy (inductive load)
Table 7.
Collector-emitter diode
(1)Pulse width limited by max. junction temperature
(2) Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode recovery energy. If the
IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25C and 125C)
(3) Turn-off losses include also the tail of the collector current
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
(di/dt)
on
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
V
CC
= 480V, I
C
= 6A
R
G
= 10
, V
GE
= 15V, Tj= 125C
(see Figure 3)
15
48
160
ns
ns
A/s
t
c
t
r
(V
off
)
t
d
(
off
)
t
f
Cross-over Time
Off Voltage Rise Time
Turn-off Delay Time
Current Fall Time
V
cc
=480V, I
C
= 6A,
R
GE
=10
, V
GE
=15V, Tj=25C
(see Figure 3)
85
20
75
70
ns
ns
ns
t
c
t
r
(V
off
)
t
d
(
off
)
t
f
Cross-over Time
Off Voltage Rise Time
Turn-off Delay Time
Current Fall Time
V
cc
=480V, I
C
= 6A,
R
GE
=10
, V
GE
=15V, Tj=125C
(see Figure 3)
150
50
110
110
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Eon
Note
2
E
off
Note
3
E
ts
Turn-on Switching Losses
Turn-off Switching Losses
Total Switching Losses
V
cc
=480V, I
C
= 6A,
R
GE
=10
, V
GE
=15V, Tj=25C
(see Figure 3)
150
85
235
J
J
J
Eon
Note
2
E
off
Note
3
E
ts
Turn-on Switching Losses
Turn-off Switching Losses
Total Switching Losses
V
cc
=480V, I
C
= 6A,
R
GE
=10
, V
GE
=15V, Tj=125C
(see Figure 3)
185
220
405
J
J
J
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
f
Forward On-Voltage
If = 6A
If = 6A, Tj = 125C
1.8
1.4
2.2
V
V
I
f
I
fm
Forward Current
Forward Current pulsed
6
48
A
A
t
rr
Q
rr
I
rrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
If = 6A, V
R
= 200V,
T
j
= 125C, di/dt = 100A/s
(see Figure 4)
100
135
2.7
ns
ns
nC
STGB6NB60HD
3 Test Circuits
5/10
3 Test
Circuits
Figure 1.
Test Circuit for Inductive Load
Switching
Figure 2.
Gate Charge Test Circuit
Figure 3.
Switching Waveform
Figure 4.
Diode Recovery Time Waveform
4 Package mechanical data
STGB6NB60HD
6/10
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are
available at: www.st.com
STGB6NB60HD
4 Package mechanical data
7/10
TO-247 MECHANICAL DATA
1
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
D1
8
0.315
E
10
10.4
0.393
E1
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
0.126
R
0.4
0.015
V2
0
4
D
2
PAK MECHANICAL DATA
3
5 Packaging mechanical data
STGB6NB60HD
8/10
5 Packaging
mechanical
data
TAPE AND REEL SHIPMENT
D
2
PAK FOOTPRINT
* on sales type
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A
330
12.992
B
1.5
0.059
C
12.8
13.2
0.504
0.520
D
20.2
0795
G
24.4
26.4
0.960
1.039
N
100
3.937
T
30.4
1.197
BASE QTY
BULK QTY
1000
1000
REEL MECHANICAL DATA
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A0
10.5
10.7
0.413
0.421
B0
15.7
15.9
0.618
0.626
D
1.5
1.6
0.059
0.063
D1
1.59
1.61
0.062
0.063
E
1.65
1.85
0.065
0.073
F
11.4
11.6
0.449
0.456
K0
4.8
5.0
0.189
0.197
P0
3.9
4.1
0.153
0.161
P1
11.9
12.1
0.468
0.476
P2
1.9
2.1
0.075
0.082
R
50
1.574
T
0.25
0.35
0.0098 0.0137
W
23.7
24.3
0.933
0.956
TAPE MECHANICAL DATA
STGB6NB60HD
6 Revision History
9/10
6
Revision History
Date
Revision
Changes
18-Nov-2005
1
Initial release.
6 Revision History
STGB6NB60HD
10/10
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by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
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