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TARGET SPECIFICATION
November 2005
This is a preliminary information on a new product now in development. Details are subject to change without notice.
STGW39NC60VD
N-CHANNEL 40A - 600V - TO-247
Very Fast PowerMESHTM IGBT
Table 1: General Features
HIGH CURRENT CAPABILITY
HIGH FREQUENCY OPERATION UP TO
50 KHz
LOSSES INCLUDE DIODE RECOVERY
ENERGY
OFF LOSSES INCLUDE TAIL CURRENT
LOWER C
RES
/ C
IES
RATIO
NEW GENERATION PRODUCTS WITH
TIGHTER PARAMETER DISTRUBUTION
DESCRIPTION
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the Pow-
erMESH
TM
IGBTs, with outstanding performances.
The suffix "V" identifies a family optimized for high
frequency.
APPLICATIONS
HIGH FREQUENCY INVERTERS
SMPS and PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
UPS
MOTOR DRIVERS
Table 2: Order Codes
Figure 1: Package
Figure 2: Internal Schematic Diagram
TYPE
V
CES
V
CE(sat)
(Max)
@25C
I
C
@100C
STGW39NC60VD
600V
< 2.5 V
40 A
1
2
3
TO-247
SALES TYPE
MARKING
PACKAGE
PACKAGING
STGW39NC60VD
GW39NC60VD
TO-247
TUBE
Rev. 1
STGW39NC60VD
2/10
Table 3: Absolute Maximum ratings
(1)Pulse width limited by max. junction temperature.
Table 4: Thermal Data
ELECTRICAL CHARACTERISTICS (T
CASE
=25C UNLESS OTHERWISE SPECIFIED)
Table 5: Off
Table 6: On
(#) Calculated according to the iterative formula:
Symbol
Parameter
Value
Unit
V
CES
Collector-Emitter Voltage (V
GS
= 0)
600
V
V
ECR
Reverse Battery Protection
20
V
V
GE
Gate-Emitter Voltage
20
V
I
C
Collector Current (continuous) at 25C (#)
70
A
I
C
Collector Current (continuous) at 100C (#)
40
A
I
CM
(1)
Collector Current (pulsed)
100
A
I
f
Diode RMS Forward Current at Tc = 25C
40
A
P
TOT
Total Dissipation at T
C
= 25C
215
W
Derating Factor
1.72
W/C
T
stg
Storage Temperature
55 to 150
C
T
j
Operating Junction Temperature
Min.
Typ.
Max.
Unit
Rthj-case
Thermal Resistance Junction-case
0.58
C/W
Rthj-case
Thermal Resistance Junction-case (Diode)
1.5
C/W
Rthj-amb
Thermal Resistance Junction-ambient
50
C/W
T
L
Maximum Lead Temperature for Soldering Purpose
(1.6 mm from case, for 10 sec.)
300
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
BR(CES)
Collectro-Emitter Breakdown
Voltage
I
C
= 1mA, V
GE
= 0
600
V
I
CES
Collector-Emitter Leakage
Current (V
CE
= 0)
V
GE
= Max Rating, Tc=25C
Tc=125C
10
1
A
mA
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
V
GE
= 20V , V
CE
= 0
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GE(th)
Gate Threshold Voltage
V
CE
= V
GE
, I
C
= 250A
3.75
5.75
V
V
CE(SAT)
Collector-Emitter Saturation
Voltage
V
GE
= 15V, I
C
= 30A, Tj= 25C
V
GE
= 15V, I
C
= 30A,
Tj= 125C
1.8
1.7
2.5
V
V
I
C
T
C
(
)
T
J MAX
T
C
R
THJ
C
V
CE SAT M AX
(
)
T
C
I
C
,
(
)
--------------------------------------------------------------------------------------------------
=
3/10
STGW39NC60VD
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Table 8: Switching On
(2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode,
the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25C and 125C)
Table 9: Switching Off
(3)Turn-off losses include also the tail of the collector current.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
CE
= 15V
,
I
C
= 30A
TBD
S
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
CE
= 25V, f = 1MHz, V
GE
= 0
TBD
TBD
TBD
pF
pF
pF
Q
g
Q
ge
Q
gc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CE
= 390V, I
C
= 30A,
V
GE
= 15V,
(see Figure 5)
TBD
TBD
TBD
nC
nC
nC
I
CL
Turn-Off SOA Minimum
Current
V
clamp
= 480V
,
Tj = 150C
R
G
= 100
,
V
GE
= 15V
200
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
(di/dt)
on
Eon
(2)
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
Turn-on Switching Losses
V
CC
= 390V, I
C
= 30A
R
G
= 3.3
, V
GE
= 15V, Tj= 25C
(see Figure 3)
TBD
TBD
TBD
TBD
TBD
ns
ns
A/s
J
t
d(on)
t
r
(di/dt)
on
Eon
(2)
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
Turn-on Switching Losses
V
CC
= 390V, I
C
= 30A
R
G
= 3.3
, V
GE
= 15V,Tj= 125C
(see Figure 3)
TBD
TBD
TBD
TBD
ns
ns
A/s
J
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r
(V
off
)
Off Voltage Rise Time
V
cc
= 390V, I
C
= 30A,
R
GE
= 3.3
, V
GE
= 15V
T
J
= 25C
(see Figure 3)
TBD
ns
t
d
(
off
)
Turn-off Delay Time
TBD
ns
t
f
Current Fall Time
TBD
ns
E
off
(3)
Turn-off Switching Loss
TBD
TBD
J
E
ts
Total Switching Loss
TBD
TBD
J
t
r
(V
off
)
Off Voltage Rise Time
V
cc
= 390V, I
C
= 30A,
R
GE
= 3.3
, V
GE
= 15V
Tj = 125C
(see Figure 3)
TBD
ns
t
d
(
off
)
Turn-off Delay Time
TBD
ns
t
f
Current Fall Time
TBD
ns
E
off
(3)
Turn-off Switching Loss
TBD
J
E
ts
Total Switching Loss
TBD
J
STGW39NC60VD
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Table 10: Collector-Emitter Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
f
Forward On-Voltage
I
f
= 30A
I
f
= 30A, Tj = 125C
1.4
1.1
2.1
V
V
t
rr
t
a
Q
rr
I
rrm
S
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Softness factor of the diode
I
f
= 30A ,V
R
= 40V,
Tj = 25C, di/dt = 100A/
s
(see Figure 6)
44
32
66
3
0.375
ns
ns
nC
A
t
rr
t
a
Q
rr
I
rrm
S
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Softness factor of the diode
I
f
= 30A ,V
R
= 40V,
Tj =125C, di/dt = 100A/
s
(see Figure 6)
88
56
237
5.4
0.57
ns
ns
nC
A
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STGW39NC60VD
Figure 3: Test Circuit for Inductive Load
Switching
Figure 4: Switching Waveforms
Figure 5: Gate Charge Test Circuit
Figure 6: Diode Recovery Times Waveform
STGW39NC60VD
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In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These
packages have a Lead-free second level interconnect . The category of second level interconnect is
marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The
maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an
ST trademark. ECOPACK specifications are available at: www.st.com
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STGW39NC60VD
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.85
5.15
0.19
0.20
A1
2.20
2.60
0.086
0.102
b
1.0
1.40
0.039
0.055
b1
2.0
2.40
0.079
0.094
b2
3.0
3.40
0.118
0.134
c
0.40
0.80
0.015
0.03
D
19.85
20.15
0.781
0.793
E
15.45
15.75
0.608
0.620
e
5.45
0.214
L
14.20
14.80
0.560
0.582
L1
3.70
4.30
0.14
0.17
L2
18.50
0.728
P
3.55
3.65
0.140
0.143
R
4.50
5.50
0.177
0.216
S
5.50
0.216
TO-247 MECHANICAL DATA
STGW39NC60VD
8/10
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
5.35
5.65
0.211
0.222
C
3.30
3.80
0.130
0.150
D
2.90
3.10
0.114
0.122
D1
1.88
2.08
0.074
0.082
E
0.75
0.95
0.030
0.037
F
1.05
1.25
0.041
0.049
F2
1.50
1.70
0.059
0.067
F3
1.90
2.10
0.075
0.083
G
10.80
11.20
0.425
0.441
H
15.80
16.20
0.622
0.638
L
9
0.354
L1
20.80
21.20
0.819
0.835
L2
19.10
19.90
0.752
0.783
L3
22.80
23.60
0.898
0.929
L4
40.50
42.50
1.594
1.673
L5
4.85
5.25
0.191
0.207
L6
20.25
20.75
0.797
0.817
N
2.1
2.3
0.083
0.091
R
4.6
0.181
DIA
3.5
3.7
0.138
0.146
P025C/A
ISOWATT218 MECHANICAL DATA
- Weight : 4.9 g (typ.)
- Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm
- The side of the dissipator must be flat within 80
m
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STGW39NC60VD
Table 11: Revision History
Date
Revision
Description of Changes
17-Nov-2005
1
First Release
STGW39NC60VD
10/10
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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