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September 2001
s
MEDIUM SPEED OPERATION :
t
PD
= 60ns (Typ.) at 10V
s
QUIESCENT CURRENT SPECIFIED UP TO
20V
s
5V, 10V AND 15V PARAMETRIC RATINGS
s
INPUT LEAKAGE CURRENT
I
I
= 100nA (MAX) AT V
DD
= 18V T
A
= 25C
s
100% TESTED FOR QUIESCENT CURRENT
s
MEETS ALL REQUIREMENTS OF JEDEC
JESD13B " STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES"
DESCRIPTION
The HCF4082B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
The HCF4082B DUAL 4 INPUT AND GATE
provides the system designer with direct
implementation of the AND function and
supplement the existing family of CMOS gates.
HCF4082B
DUAL 4 INPUT AND GATE
PIN CONNECTION
ORDER CODES
PACKAGE
TUBE
T & R
DIP
HCF4082BEY
SOP
HCF4082BM1
HCF4082M013TR
DIP
SOP
HCF4082B
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INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
TRUTH TABLE
X : Don't Care
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to V
SS
pin voltage.
RECOMMENDED OPERATING CONDITIONS
PIN No
SYMBOL
NAME AND FUNCTION
5, 4, 3, 2
A, B, C, D
Data Inputs
9, 10, 11, 12
E, F, G, H
Data Inputs
1, 13
J, K
Data Outputs
6, 8
NC
Not Connected
7
V
SS
Negative Supply Voltage
14
V
DD
Positive Supply Voltage
INPUTS
OUTPUTS
D, E
C, F
B, G
A, H
J, K
L
X
X
X
L
X
L
X
X
L
X
X
L
X
L
X
X
X
L
L
H
H
H
H
H
Symbol
Parameter
Value
Unit
V
DD
Supply Voltage
-0.5 to +22
V
V
I
DC Input Voltage
-0.5 to V
DD
+ 0.5
V
I
I
DC Input Current
10
mA
P
D
Power Dissipation per Package
200
mW
Power Dissipation per Output Transistor
100
mW
T
op
Operating Temperature
-55 to +125
C
T
stg
Storage Temperature
-65 to +150
C
Symbol
Parameter
Value
Unit
V
DD
Supply Voltage
3 to 20
V
V
I
Input Voltage
0 to V
DD
V
T
op
Operating Temperature
-55 to 125
C
HCF4082B
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DC SPECIFICATIONS
The Noise Margin for both "1" and "0" level is: 1V min. with V
DD
=5V, 2V min. with V
DD
=10V, 2.5V min. with V
DD
=15V
DYNAMIC ELECTRICAL CHARACTERISTICS (T
amb
= 25C, C
L
= 50pF, R
L
= 200K
, t
r
= t
f
= 20 ns)
(*) Typical temperature coefficient for all V
DD
value is 0.3 %/C.
Symbol
Parameter
Test Condition
Value
Unit
V
I
(V)
V
O
(V)
|I
O
|
(
A)
V
DD
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
I
L
Quiescent Current
0/5
5
0.01
0.25
7.5
7.5
A
0/10
10
0.01
0.5
15
15
0/15
15
0.01
1
30
30
0/20
20
0.02
5
150
150
V
OH
High Level Output
Voltage
0/5
<1
5
4.95
4.95
4.95
V
0/10
<1
10
9.95
9.95
9.95
0/15
<1
15
14.95
14.95
14.95
V
OL
Low Level Output
Voltage
5/0
<1
5
0.05
0.05
0.05
V
10/0
<1
10
0.05
0.05
0.05
15/0
<1
15
0.05
0.05
0.05
V
IH
High Level Input
Voltage
0.5/4.5
<1
5
3.5
3.5
3.5
V
1/9
<1
10
7
7
7
1.5/13.5
<1
15
11
11
11
V
IL
Low Level Input
Voltage
4.5/0.5
<1
5
1.5
1.5
1.5
V
9/1
<1
10
3
3
3
13.5/1.5
<1
15
4
4
4
I
OH
Output Drive
Current
0/5
2.5
<1
5
-1.36
-3.2
-1.15
-1.1
mA
0/5
4.6
<1
5
-0.44
-1
-0.36
-0.36
0/10
9.5
<1
10
-1.1
-2.6
-0.9
-0.9
0/15
13.5
<1
15
-3.0
-6.8
-2.4
-2.4
I
OL
Output Sink
Current
0/5
0.4
<1
5
0.44
1
0.36
0.36
mA
0/10
0.5
<1
10
1.1
2.6
0.9
0.9
0/15
1.5
<1
15
3.0
6.8
2.4
2.4
I
I
Input Leakage
Current
0/18
Any Input
18
10
-5
0.1
1
1
A
C
I
Input Capacitance
Any Input
5
7.5
pF
Symbol
Parameter
Test Condition
Value (*)
Unit
V
DD
(V)
Min.
Typ.
Max.
t
PLH
t
PHL
Propagation Delay Time
5
125
250
ns
10
60
125
15
45
90
t
TLH
t
THL
Output Transition Time
5
100
200
ns
10
60
100
15
40
80
HCF4082B
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TEST CIRCUIT
C
L
= 50pF or equivalent (includes jig and probe capacitance)
R
L
= 200K
R
T
= Z
OUT
of pulse generator (typically 50
)
WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)
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