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Электронный компонент: L6205N

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1/21
L6205
September 2003
s
OPERATING SUPPLY VOLTAGE FROM 8 TO 52V
s
5.6A OUTPUT PEAK CURRENT (2.8A DC)
s
R
DS(ON)
0.3
TYP. VALUE @ T
j
= 25 C
s
OPERATING FREQUENCY UP TO 100KHz
s
NON DISSIPATIVE OVERCURRENT
PROTECTION
s
PARALLELED OPERATION
s
CROSS CONDUCTION PROTECTION
s
THERMAL SHUTDOWN
s
UNDER VOLTAGE LOCKOUT
s
INTEGRATED FAST FREE WHEELING DIODES
TYPICAL APPLICATIONS
s
BIPOLAR STEPPER MOTOR
s
DUAL OR QUAD DC MOTOR
DESCRIPTION
The L6205 is a DMOS Dual Full Bridge designed for
motor control applications, realized in MultiPower-
BCD technology, which combines isolated DMOS
Power Transistors with CMOS and bipolar circuits on
the same chip. Available in PowerDIP20 (16+2+2),
PowerSO20 and SO20(16+2+2) packages, the
L6205 features a non-dissipative protection of the
high side PowerMOSFETs and thermal shutdown.
BLOCK DIAGRAM
D99IN1091A
GATE
LOGIC
OVER
CURRENT
DETECTION
OVER
CURRENT
DETECTION
GATE
LOGIC
VCP
VBOOT
EN
A
IN1
A
IN2
A
EN
B
IN1
B
IN2
B
V
BOOT
5V
10V
VS
A
V
S
B
OUT1
A
OUT2
A
OUT1
B
OUT2
B
SENSE
A
CHARGE
PUMP
VOLTAGE
REGULATOR
THERMAL
PROTECTION
V
BOOT
V
BOOT
10V
10V
BRIDGE A
BRIDGE B
SENSE
B
OCD
A
OCD
B
ORDERING NUMBERS:
L6205N (PowerDIP20)
L6205PD (PowerSO20)
L6205D (SO20)
PowerDIP20
(16+2+2)
PowerSO20
SO20
(16+2+2)
DMOS DUAL FULL BRIDGE DRIVER
L6205
2/21
ABSOLUTE MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Test conditions
Value
Unit
V
S
Supply Voltage
V
SA
= V
SB
= V
S
60
V
V
OD
Differential Voltage between
VS
A
, OUT1
A
, OUT2
A
, SENSE
A
and
VS
B
, OUT1
B
, OUT2
B
, SENSE
B
V
SA
= V
SB
= V
S
= 60V;
V
SENSEA
= V
SENSEB
= GND
60
V
V
BOOT
Bootstrap Peak Voltage
V
SA
= V
SB
= V
S
V
S
+ 10
V
V
IN
,V
EN
Input and Enable Voltage Range
-0.3 to +7
V
V
SENSEA,
V
SENSEB
Voltage Range at pins SENSE
A
and SENSE
B
-1 to +4
V
I
S(peak)
Pulsed Supply Current (for each
V
S
pin), internally limited by the
overcurrent protection
V
SA
= V
SB
= V
S
;
t
PULSE
< 1ms
7.1
A
I
S
RMS Supply Current (for each
V
S
pin)
V
SA
= V
SB
= V
S
2.8
A
T
stg
, T
OP
Storage and Operating
Temperature Range
-40 to 150
C
Symbol
Parameter
Test Conditions
MIN
MAX
Unit
V
S
Supply Voltage
V
SA
= V
SB
= V
S
8
52
V
V
OD
Differential Voltage Between
VS
A
, OUT1
A
, OUT2
A
, SENSE
A
and
VS
B
, OUT1
B
, OUT2
B
, SENSE
B
V
SA
= V
SB
= V
S
;
V
SENSEA
= V
SENSEB
52
V
V
SENSEA,
V
SENSEB
Voltage Range at pins SENSE
A
and SENSE
B
(pulsed t
W
< t
rr
)
(DC)
-6
-1
6
1
V
V
I
OUT
RMS Output Current
2.8
A
T
j
Operating Junction Temperature
-25
+125
C
f
sw
Switching Frequency
100
KHz
3/21
L6205
THERMAL DATA
PIN CONNECTIONS (Top View)
(5)
The slug is internally connected to pins 1,10,11 and 20 (GND pins).
Symbol
Description
PowerDIP20
SO20
PowerSO20
Unit
R
th-j-pins
MaximumThermal Resistance Junction-Pins
12
14
-
C/W
R
th-j-case
Maximum Thermal Resistance Junction-Case
-
-
1
C/W
R
th-j-amb1
MaximumThermal Resistance Junction-Ambient
1
(1)
Mounted on a multi-layer FR4 PCB with a dissipating copper surface on the bottom side of 6cm
2
(with a thickness of 35m).
40
51
-
C/W
R
th-j-amb1
Maximum Thermal Resistance Junction-Ambient
2
(2)
Mounted on a multi-layer FR4 PCB with a dissipating copper surface on the top side of 6cm
2
(with a thickness of 35m).
-
-
35
C/W
R
th-j-amb1
MaximumThermal Resistance Junction-Ambient
3
(3)
Mounted on a multi-layer FR4 PCB with a dissipating copper surface on the top side of 6cm
2
(with a thickness of 35m), 16 via holes
and a ground layer.
-
-
15
C/W
R
th-j-amb2
Maximum Thermal Resistance Junction-Ambient
4
(4)
Mounted on a multi-layer FR4 PCB without any heat sinking surface on the board.
56
77
62
C/W
PowerDIP20/SO20
PowerSO20
(5)
GND
OUT1
A
SENSE
A
IN2
A
IN1
A
VCP
EN
A
OUT2
A
VS
A
VS
B
OUT2
B
VBOOT
IN2
B
EN
B
IN1
B
SENSE
B
OUT1
B
GND
10
8
9
7
6
5
4
3
2
13
14
15
16
17
19
18
20
12
1
11
GND
GND
D99IN1092A
GND
OUT1
B
SENSE
B
IN1
B
IN2
B
1
3
2
4
5
6
7
8
9
EN
B
VBOOT
OUT2
B
VS
B
GND
15
14
13
12
11
D99IN1093A
10
20
19
18
17
16
IN1
A
IN2
A
SENSE
A
OUT1
A
GND
GND
VS
A
OUT2
A
VCP
EN
A
L6205
4/21
(6)
Also connected at the output drain of the Overcurrent and Thermal protection MOSFET. Therefore, it has to be driven putting in series a
resistor with a value in the range of 2.2k
- 180K
, recommended 100k
PIN DESCRIPTION
PACKAGE
Name
Type
Function
SO20/
PowerDIP20
PowerSO20
PIN #
PIN #
1
6
IN1
A
Logic Input
Bridge A Logic Input 1.
2
7
IN2
A
Logic Input
Bridge A Logic Input 2.
3
8
SENSE
A
Power Supply
Bridge A Source Pin. This pin must be connected to Power
Ground directly or through a sensing power resistor.
4
9
OUT1
A
Power Output
Bridge A Output 1.
5, 6, 15, 16
1, 10, 11,
20
GND
GND
Signal Ground terminals. In PowerDIP and SO packages,
these pins are also used for heat dissipation toward the
PCB.
7
12
OUT1
B
Power Output
Bridge B Output 1.
8
13
SENSE
B
Power Supply
Bridge B Source Pin. This pin must be connected to Power
Ground directly or through a sensing power resistor.
9
14
IN1
B
Logic Input
Bridge B Logic Input 1.
10
15
IN2
B
Logic Input
Bridge B Logic Input 2.
11
16
EN
B
Logic Input
(6)
Bridge B Enable. LOW logic level switches OFF all Power
MOSFETs of Bridge B. This pin is also connected to the
collector of the Overcurrent and Thermal Protection
transistor to implement over current protection.
If not used, it has to be connected to +5V through a
resistor.
12
17
VBOOT
Supply
Voltage
Bootstrap Voltage needed for driving the upper
PowerMOSFETs of both Bridge A and Bridge B.
13
18
OUT2
B
Power Output
Bridge B Output 2.
14
19
VS
B
Power Supply Bridge B Power Supply Voltage. It must be connected to
the supply voltage together with pin VS
A
.
17
2
VS
A
Power Supply
Bridge A Power Supply Voltage. It must be connected to
the supply voltage together with pin VS
B
.
18
3
OUT2
A
Power Output
Bridge A Output 2.
19
4
VCP
Output
Charge Pump Oscillator Output.
20
5
EN
A
Logic Input
(6)
Bridge A Enable. LOW logic level switches OFF all Power
MOSFETs of Bridge A. This pin is also connected to the
collector of the Overcurrent and Thermal Protection
transistor to implement over current protection.
If not used, it has to be connected to +5V through a
resistor.
5/21
L6205
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 C, V
s
= 48V, unless otherwise specified)
Symbol
Parameter Test
Conditions
Min
Typ
Max
Unit
V
Sth(ON)
Turn-on Threshold
6.6
7
7.4
V
V
Sth(OFF)
Turn-off Threshold
5.6
6
6.4
V
I
S
Quiescent Supply Current
All Bridges OFF;
T
j
= -25C to 125C
(7)
5
10
mA
T
j(OFF)
Thermal Shutdown Temperature
165
C
Output DMOS Transistors
R
DS(ON)
High-Side Switch ON Resistance T
j
= 25
C
0.34
0.4
T
j
=125
C
(7)
0.53
0.59
Low-Side Switch ON Resistance
T
j
= 25
C
0.28
0.34
T
j
=125
C
(7)
0.47
0.53
I
DSS
Leakage Current
EN = Low; OUT = V
S
2
mA
EN = Low; OUT = GND
-0.15
mA
Source Drain Diodes
V
SD
Forward ON Voltage
I
SD
= 2.8A, EN = LOW
1.15
1.3
V
t
rr
Reverse Recovery Time
I
f
= 2.8A
300
ns
t
fr
Forward Recovery Time
200
ns
Logic Input
V
IL
Low level logic input voltage
-0.3
0.8
V
V
IH
High level logic input voltage
2
7
V
I
IL
Low Level Logic Input Current
GND Logic Input Voltage
-10
A
I
IH
High Level Logic Input Current
7V Logic Input Voltage
10
A
V
th(ON)
Turn-on Input Threshold
1.8
2.0
V
V
th(OFF)
Turn-off Input Threshold
0.8
1.3
V
V
th(HYS)
Input Threshold Hysteresis
0.25
0.5
V
Switching Characteristics
t
D(on)EN
Enable to out turn ON delay time
(8)
I
LOAD
=2.8A, Resistive Load
100
250
400
ns
t
D(on)IN
Input to out turn ON delay time
I
LOAD
=2.8A, Resistive Load
(dead time included)
1.6
s
t
RISE
Output rise time
(8)
I
LOAD
=2.8A, Resistive Load
40
250
ns
t
D(off)EN
Enable to out turn OFF delay time
(8)
I
LOAD
=2.8A, Resistive Load
300
550
800
ns